Microcavity distributed-feedback laser using dye-doped polymeric thin films

An organic microcavity laser, in which all the stacked polymer layers are doped with pyrromethene-567 dye, is presented. Singlemode laser oscillation at 568 nm was obtained that was located in the middle of the stopband. The lasing threshold was found to be 260 nJ/pulse, which corresponded to 300 muJ/cm² in the pulse energy density     

A 50-Gbit/s 450-mW Full-Rate 4:1 Multiplexer With Multiphase Clock Architecture in 0.13- μm InP HEMT Technology

A full-rate multiplexer (MUX) with a multiphase clock architecture for over 40 Gbit/s optical communication systems is presented. The 4:1 MUX is comprised of a re-timer based on a D-type flip-flop (DFF) and a clock tree system that uses EXOR-type delay buffers to match its skews well to those of the data. The supply voltage is reduced to -1.5 V by analyzing the voltage allocation. Fabricated in a 0.13-mum InP HEMT technology, a DFF test circuit achieved 75-Gbit/s operation and exhibited performance sufficient to re-time 50-Gbit/s serialized data. The 4:1 MUX measurement results demonstrate successful 50-Gbit/s operation at room temperature, and 40-Gbit/s operation, which has 10^-11 error free for 2³¹ - 1 pseudorandom bit stream (PRBS) data, up to an ambient temperature of 90 degrees or down to - 1.24 V of supply voltage. The circuit consumes 450 mW at a - 1.5-V supply and exhibits an output jitter of 283 fs rms at 50-Gbit/s operation. We also propose a multiphase clock generator for a MUX that has a serialization of more than four channels     

Multiple quasi-phase-matched device using continuous phase modulation of /spl chi//sup (2)/ grating and its application to variable wavelength conversion

We propose a new multiple quasi-phase-matched wavelength converter based on the continuous phase modulation of a /spl chi//sup (2)/ grating for use in variable wavelength conversion. A numerical study shows that the proposed device exhibits a high conversion efficiency, flexible design, and robust fabrication tolerance. A waveguide device fabricated by annealed proton exchange agrees well with the numerical design. Fine-tuning the device enabled us to demonstrate variable wavelength conversion between signals on the standard optical frequency grid. Using the device, we also demonstrated fast (<100 ps) wavelength switching of 4-channel 40-Gb/s signals. The obtained results clearly show that the proposed multiple quasi-phase-matched devices will be useful when constructing future flexible photonic networks.     

A novel ferromagnetic thermo-stent for plaque stabilization that self-regulates the temperature

The purpose of this study is to investigate the vascular wall with a thermally self-regulating, cylindrical stent made of a low Curie temperature ferromagnetic alloy. Physiologic saline was circulated in the silicone model vessel implanted with the stent. The stent-temperature remained nearly constant for variable saline flows, saline temperatures, and magnetic flux densities. Stent implants of this type in human blood vessels could potentially enable thermotherapy and temperature determination without catheterization.     

High channel mobility in normally-off 4H-SiC buried channel MOSFETs

We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500°C. The optimum doping depth of the BC region has been investigated. For a nitrogen concentration of 1×10¹⁷ cm^-3, the optimum depth was found to be 0.2 μm. Under this condition, a channel mobility of 140 cm²/Vs was achieved with a threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide     

Calculation of the uniform breakdown field strength of SF6 gas

We calculated the uniform dielectric breakdown field strength of SF₆ gas over the temperature range of 300 to 3000 K. The local thermal equilibrium (ITE) composition of the dissociated gas is connected to the electron impact collision cross sections of the species SF₆, F₂, F and S. The critical reduced electric field strength of the composition is determined by a balancing electron generation and loss modeled by chemical reactions evaluated by the electron energy distribution function (EEDF) derived from the Boltzmann transport equation. At room temperature, pure SF₆ has a critical reduced electric field strength of 362 Td. With increasing temperature and decreasing density we found a small decrease of this value, whereas at temperatures higher than 1500 K, dissociation starts to decrease the dielectric strength of the composition. Furthermore, we found that generation of electrons by (associative) detachment from F ^- starts to play an important role at temperatures >2500 K, where the critical field strength still has a value of 118 Td. This value is found to decrease rapidly afterwards with increasing temperature to the value of 38 Td at 3000 K. The calculated results agree very well with independently predicted values and measured data     

Teleoperation via computer network

In a teleoperation system, providing force information to a human operator can improve task performance. When a communication block between a master and a slave has a transmission delay, the system is easily destabilized. Anderson and Spong guaranteed passivity in the communication block by using scattering transformation and overcame this instability caused by the time delay. But this method can be applied to the communication block with a constant time delay. In a traditional teleoperation system, its communication block has a constant time delay. But time delay irregularly changes in a computer network because many users share telecommunication lines. This paper shows that the variable time delay destabilizes bilateral master-slave manipulator with scattering transformation and a new compensation method which keeps the time delay constant. This new compensation method has been implemented in a single-axis master-slave manipulator.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

A novel tungsten light-shield structure for high-density CCD imagesensors

A novel tungsten light-shield structure has been developed. Tungsten film properties, the device configuration with the tungsten light-shield structure, and experimentally achieved results regarding device characteristics are described. Optical measurement clarified that tungsten film has a sufficiently low transmittance value for practical use for more than 200-nm-thick film and is stable up to 1000°C. The good step coverage and low reflectance, such as 20-40% for aluminum, required for light-shield film were also obtained. A tungsten light-shield structure was applied to a 1/2-in format 668(H)-pixel×575(V)-pixel charge coupled-device (CCD) image sensor. An extremely low smear value, less than 0.001%, was obtained for a 300-nm film thickness     

Yagi-Uda array for millimetre-wave imaging

An imaging array consisting of five Yagi-Uda antennas in a dielectric has been constructed for 50 GHz that has antenna patterns suitable for millimetre-wave applications. Crosstalk levels of less than -30 dB between adjacent antennas in an f/1.0 imaging array have been measured in 5 GHz model experiments.<>