Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

New block copolymers II. Synthesis and characterization of an ABA-type block copolymer

A new regular ABA-type triblock copolymer has been synthesized by polycondensation of the acid chloride of carboxy-terminated butadience-acrylonitrile rubber (CTBN) with hydroxyterminated polyethylene isophthalate (PEI) oligomer. This block copolymer was characterized by elemental (nitrogen) analysis, vapor pressure osmometry, viscometry, and IR and NMR spectroscopy. Quantitative estimation of block segments has been carried out by measuring the area under peaks assigned to various protons in the NMR spectrum of the polymer. NMR spectral analysis has been found to agree well with the nitrogen analysis of the polymer. The solubility and solution viscosity behavior of the polymer has also been studied.     

Polybutylene terephthalate/high-density polyethylene alloys. I. Morphological studies

Polybutylene terephthalate (PBT) is a commercially successful thermoplastic polyester but has certain drawbacks such as low impact strength and low melt strength. An attempt has been made to modify the properties of PBT by blending it with polyolefin such as highdensity polyethylene (HDPE). Since PBT and HDPE are incompatible, an ionomer has been used as a compatibilizer to form an alloy. Alloys of PBT and HDPE with varying amounts (2-8%) of ionomer were prepared by melt blending. The ultimate mechanical properties improved significantly on the addition of the ionomer due to an increase in interfacial adhesion between PBT and HDPE. DSC studies show that the presence of ionomer facilitated the crystallization of PBT in the alloy. DMTA studies show that more of PBT (amorphous) is going in to the HDPE-rich phase in the presence of ionomer. The morphology of the alloys was studied using scanning electron microscopy (SEM), polarizing microscopy (PM), and small-angle light scattering (SALS). They showed improved dispersion of HDPE domains in PBT matrix with increasing ionomer content and change in the type of superstructure on adding the ionomer. It has been shown that an alloy of PBT and HDPE with improved mechanical properties and homogeneous morphology can be made with use of ionomer as a compatibilizer. Such alloys are cost effective and can find use in several engineering applications.     

The influence of heating element temperature on productivity

A study to determine the most optimal heating element for any given processing configuration yields a surprisingly simple log-linear dependence of the productivity on the heating-element temperature. Aluminum, iron, and aluminum-oxide processing efficiencies are studied for conditions that span heat treating to melting. The authors note that, in general, the highest element temperature that may effectively be used for a given heating process is the high-productivity solution.     

An acoustic aneurysm-detector

Intracranial aneurysms have a high prevalence in the adult population; and if they rupture, significant morbidity almost always ensues. However, pulsatile blood flow through aneurysms produces vibrational sound patterns that may be detected extracranially. Thus, an acoustic aneurysm-detector has been developed to detect the sounds produced by intracranial aneurysms prior to rupture. The design is based on the utilization of a hydrophone for signal detection and computational signal processing for signal extraction. Data are examined in the time domain, the frequency domain, and the time-frequency plane. Examples are presented from an animal model and from a patient with a known aneurysm.     

Effect of dysprosia doping on structural and electrical property of stabilized zirconia for intermediate- temperature SOFCs

Present work deals with structural, micro-structural and electrical properties of dysprosia stabilized zirconia electrolyte, which have been evaluated by means of X-ray diffraction (XRD) and scanning (SEM), and complex impedance analysis respectively. The amount of dysprosia was varied from 2 to 12 mol% in zirconia. The addition of dysprosia (8-12 mol%) stabilized the cubic zirconia phase, which was analyzed from XRD analysis. SEM micrographs clearly showed the improvement in sinterability with increase in dysprosia concentration up to 6 mol% disprosia. Complex impedance analysis was performed in the temperature range from 250 to 600 °C. The results indicated a gradual decrease in impedance of both bulk and grain boundary and increase in conductivity with dysprosia doping up to 6 mol% and thereafter showing a reverse trend. The activation energies for oxygen ion migration were also found to decrease with increase in dysprosia doping which was in the range of 0.99 ? 1.28 eV. The average thermal expansion coefficient increases linearly.     

On the Feedback Capacity of Power-Constrained Gaussian Noise Channels With Memory

For a stationary additive Gaussian-noise channel with a rational noise power spectrum of a finite-order L, we derive two new results for the feedback capacity under an average channel input power constraint. First, we show that a very simple feedback-dependent Gauss-Markov source achieves the feedback capacity, and that Kalman-Bucy filtering is optimal for processing the feedback. Based on these results, we develop a new method for optimizing the channel inputs for achieving the Cover-Pombra block-length- n feedback capacity by using a dynamic programming approach that decomposes the computation into n sequentially identical optimization problems where each stage involves optimizing O(L ²) variables. Second, we derive the explicit maximal information rate for stationary feedback-dependent sources. In general, evaluating the maximal information rate for stationary sources requires solving only a few equations by simple nonlinear programming. For first-order autoregressive and/or moving average (ARMA) noise channels, this optimization admits a closed-form maximal information rate formula. The maximal information rate for stationary sources is a lower bound on the feedback capacity, and it equals the feedback capacity if the long-standing conjecture, that stationary sources achieve the feedback capacity, holds     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

Smart Skin-Adhesive Patches: From Design to Biomedical Applications

With the advancement of medical and digital technologies, smart skin adhesive patches have emerged as a key player for complex medical purposes. In particular, skin adhesive patches with integrated electronics have created an excellent platform for monitoring health conditions and intelligent medication. However, the efficient design of the adhesive patches is still challenging as it requires a strong combination of network structure, adhesion, physical properties, and biocompatibility. To design an assimilated device, one must have a deep knowledge of various skin adhesive patches. This article provides a comprehensive review of the recent advances in skin-adhesive patches, including hydrogel-based adhesive patches, transdermal patches, and electronic skin (E-skin) patches, for various biomedical applications such as wound healing, drug delivery, biosensing, and health monitoring. Furthermore, the key challenges, implementable strategies, and future designs that can potentially provide researchers in designing innovative multipurpose smart skin patches are discussed. These advanced approaches are promising for managing the health and fitness of patients who require regular medical care.