Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

An acoustic aneurysm-detector

Intracranial aneurysms have a high prevalence in the adult population; and if they rupture, significant morbidity almost always ensues. However, pulsatile blood flow through aneurysms produces vibrational sound patterns that may be detected extracranially. Thus, an acoustic aneurysm-detector has been developed to detect the sounds produced by intracranial aneurysms prior to rupture. The design is based on the utilization of a hydrophone for signal detection and computational signal processing for signal extraction. Data are examined in the time domain, the frequency domain, and the time-frequency plane. Examples are presented from an animal model and from a patient with a known aneurysm.     

On the origin of decay of spin current with temperature in organic spintronic devices

This article addresses the most challenging question facing the organic spintronics community today – what causes the universal loss of Giant Magnetoresistance (GMR) signal in organic spin valve devices made with different spin-polarized electrodes and organic semiconductor spacers? Careful analysis of our own and other experimental results available in literature indicate that transition of transport from polaron tunneling limit (suggested by the variable range hopping model) to thermally activated hopping limit (in the temperature range of 40–58 K) marks the most significant decrease of spin relaxation in organic semiconductors. With increasing occupancy of the available hopping sites by the thermally activated carriers, chances of spin flip inside the organic semiconductors increases significantly causing fast spin relaxation in the spin-valves.     

A novel technique for RTP annealing of compound semiconductors

We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much highertemperatures (>1500°C) than conventional tungsten–halogen lamp RTP equipment and achievinghigh ramp-up and ramp-down rates. We have conducted implant activation annealing studies ofSi⁺-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si⁺ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.     

On the Feedback Capacity of Power-Constrained Gaussian Noise Channels With Memory

For a stationary additive Gaussian-noise channel with a rational noise power spectrum of a finite-order L, we derive two new results for the feedback capacity under an average channel input power constraint. First, we show that a very simple feedback-dependent Gauss-Markov source achieves the feedback capacity, and that Kalman-Bucy filtering is optimal for processing the feedback. Based on these results, we develop a new method for optimizing the channel inputs for achieving the Cover-Pombra block-length- n feedback capacity by using a dynamic programming approach that decomposes the computation into n sequentially identical optimization problems where each stage involves optimizing O(L ²) variables. Second, we derive the explicit maximal information rate for stationary feedback-dependent sources. In general, evaluating the maximal information rate for stationary sources requires solving only a few equations by simple nonlinear programming. For first-order autoregressive and/or moving average (ARMA) noise channels, this optimization admits a closed-form maximal information rate formula. The maximal information rate for stationary sources is a lower bound on the feedback capacity, and it equals the feedback capacity if the long-standing conjecture, that stationary sources achieve the feedback capacity, holds     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

Auditory motivated level-crossing approach to instantaneous frequency estimation

We address the problem of estimating the instantaneous frequency (IF) of a phase signal using its level-crossing (LC) information based on front-end auditory processing motivation. We show that the problem of IF estimation using LC information can be cast in the framework of estimation from irregularly sampled data. The formulation has the generality of estimating different types of IF without the need for a quasistationary assumption. We consider two types of IF-polynomial and bandlimited; we use polynomial interpolating functions for the former, and for the latter, we propose a novel "line plus sum of sines" model. The model parameters are estimated by linear regression. Considering the noisy case, LC data for different levels is analyzed, and methods for combining different estimators from LCs are discussed. Theoretical and extensive simulation results show that the performance of the zero-crossing (ZC) based IF estimator and the level-crossing based IF estimator with smaller level values is better than those obtained with higher level values or their combinations. The new technique reaches the Crame/spl acute/r-Rao bound (CRB) roughly above 4 dB signal-to-noise ratio (SNR), and its performance does not deteriorate rapidly with mismatch in the IF order compared with the other techniques in the literature.     

Ferroelectric properties of pulsed laser deposited PZT (92/8) thin films

The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited PZT (92/8) thin films has been studied. The structural analysis revealed that the films had a well crystallized perovskite phase without secondary phases. The atomic force microscopy has been employed to estimate the grain size and surface roughness of the film. A well-saturated P–E hysteresis loop was observed with average values of remnant polarization (P_r) ≈ 16.0 μC/cm², saturation polarization (P_s) ≈ 21.7 μC/cm² and coercive field ≈138 kV/cm. The P–E loops were very stable with frequency, confirming that the contribution of the leakage current and/or mobile free charges to the polarization is minimum. The polarization current exhibits the exponential dependence on the pulse amplitude and the leakage current seems to be governed by the hopping mechanism which is generally associated to structural defects.