Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer

We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of devices, it can cause serious damage to organic layers. In this report, we fabricate devices that are free from plasma damage by introducing a 1%-Li-doped electron transport layer (ETL). The difference of external electroluminescence quantum efficiency between OLEDs with the structure ITO/α-NPD/ETL/Al (where ITO is indium tin oxide and α-NPD is N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) with Al cathodes deposited by conventional evaporation or sputtering is 0.1%, and their driving voltage is identical. We find that the Li-doped ETL should be thicker than 40 nm. Analysis of the depth profile of the ETL by time-of-flight secondary ion mass spectrometry indicates that considerable damage from sputtering extended to a depth of approximately 30 nm, suggesting that high-energy particles penetrated about 30 nm into the ETL.     

Design concept of antennas for small mobile terminals and the future perspective

With the progress and rapid increase in mobile terminals, the design of antennas for small mobile terminals is acquiring great importance. In view of this situation, the design concept of antenna systems for small mobile terminals and its future perspective are discussed, referring to the trends in modern mobile communications and the demands for the antenna system. The design concept of antenna systems has changed along with the progress of mobile systems. In the conventional design, the conducting material of the equipment case, existing near the antenna element, is included as a part of the radiator in the antenna system, without regard to whether or not it has been considered. In the latest mobile phones, the design concept has been advanced to aim at improving the antenna's performance, and the treatment of the case, etc., has become a part of this. Some particular considerations for the design are to relieve the degradation of the antenna's performance due to the human-body effect, to overcome the SAR problems, and yet to make the size small. Furthermore, it is now time to proceed to the more-advanced concept, in which implementation of adaptive control and software is considered, even in small mobile terminals. Typical trends in modern communications systems are discussed, and the demands of these trends-which are summarized as down-sizing, function, and intelligence-are taken up for future antenna structures. Small-antenna technology and the application of the integration technology to antenna systems are essential for realizing such future structures.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

DNA Computing Boosted by a Cationic Copolymer

The huge information storage capability of DNA and its ability to self‐assemble can be harnessed to enable massively parallel computing in a small space. DNA‐based logic gates are designed that rely on DNA strand displacement reactions; however, computation is slow due to time‐consuming DNA reassembly processes and prone to failure as DNA is susceptible to degradation by nucleases and under certain solution conditions. Here, it is shown that the presence of a cationic copolymer boosts the speed of DNA logic gate operations that involve multiple and parallel strand displacement reactions. Two kinds of DNA molecular operations, one based on a translator gate and one on a seesaw gate, are successfully enhanced by the copolymer without tuning of computing conditions or DNA sequences. The copolymer markedly reduces operation times from hours to minutes. Moreover, the copolymer enhances nuclease resistance.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Adaptive Playout Buffer Algorithm for Enhancing Perceived Quality of Streaming Applications

An end-to-end packet delay in the Internet is an important performance parameter, because it heavily affects the quality of real-time applications. In the current Internet, however, because the packet transmission qualities (e.g., transmission delays, jitters, packet losses) may vary dynamically, it is not easy to handle a real-time traffic. In UDP-based real-time applications, a smoothing buffer (playout buffer) is typically used at a client host to compensate for variable delays. The issue of playout control has been studied by some previous works, and several algorithms controlling the playout buffer have been proposed. These studies have controlled the network parameters (e.g., packet loss ratio and playout delay), not considered the quality perceived by users. In this paper, we first clarify the relationship between Mean Opinion Score (MOS) of played audio and network parameters (e.g., packet loss, packet transmission delay, transmission rate). Next, utilizing the MOS function, we propose a new playout buffer algorithm considering user's perceived quality of real-time applications. Our simulation and implementation tests show that it can enhance the perceived quality, compared with existing algorithms.     

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed.     

Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth

Growth rate has a direct impact on the productivity of nitride LED production.Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al_0.1Ga_0.9N growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described.XRD of（002） and（102） direction was 200 arcsec and 250 arcsec, respectively.Impact of the growth rate on productivity is discussed.     

Durable Ultraflexible Organic Photovoltaics with Novel Metal‐Oxide‐Free Cathode

Flexible and stretchable organic photovoltaics (OPVs) are promising as a power source for wearable devices with multifunctions ranging from sensing to locomotion. Achieving mechanical robustness and high power conversion efficiency for ultraflexible OPVs is essential for their successful application. However, it is challenging to simultaneously achieve these features by the difficulty to maintain stable performance under a microscale bending radius. Ultraflexible OPVs are proposed by employing a novel metal‐oxide‐free cathode that consists of a printed ultrathin metallic transparent electrode and an organic electron transport layer to achieve high electron‐collecting capabilities and mechanical robustness. In fact, the proposed ultraflexible OPV achieves a power conversion efficiency of 9.7% and durability with 74% efficiency retention after 500 cycles of deformation at 37% compression through buckling. The proposed approach can be applied to active layers with different morphologies, thus suggesting its universality and potential for high‐performance ultraflexible OPV devices.     

Correlation between maximum temperature increase and peak SAR with different average schemes and masses

This paper investigates the correlation between maximum temperature increases and peak spatial-average specific absorption rates (SARs), calculated by different average schemes and masses. For evaluating the effect of mass on the correlation properly, a three-dimensional Green's function is presented. From our computational investigation, no best average mass for peak spatial-average SAR exist from the aspect of the correlation with maximum temperature increase. This is attributed to the frequency dependent penetration depth of EM waves. Maximum temperature increase in the head including the pinna is reasonably correlated with peak spatial-average SARs for most average schemes and masses considered in this paper. Maximum temperature increase in the head only (excluding the pinna) is reasonably correlated with peak 10-g SARs for the average schemes considered in this paper. The rationale for this result is explained using the Green's function. The point to be stressed here is that the slope correlating them is largely dependent on the average scheme and mass. Additionally, good agreement is observed in the slopes obtained by using two head models, which have been developed at Osaka University and Nagoya Institute of Technology. However, weak correlation is observed for the brain, which is caused by the difference of the positions where peak SAR and maximum temperature increase appear. The 95th percentile values of the slope correlating maximum temperature increases in the head or brain and peak spatial-average SAR are quantified for different average schemes and masses.