Flexible microelectronics: New application for thin‐film transistors in fingerprint sensors

Abstract— Thin‐film transistors (TFTs) are field‐effect transistors that can be used to create large‐scale‐integrated (LSI) circuits. The combination of high‐performance TFTs and transfer technology of the TFTs has the potential to foster the rise of a new flexible microelectronics industry. This paper discusses the current status of flexible microelectronics, using a TFT fingerprint sensor (FPS) as an example. Technology used in active‐matrix displays can easily be applied to the TFT FPS. TFT technology should not be confined to the display industry; its use should be expanded into the semiconductor industry. With the result presented in this paper, we declare a new era of flexible microelectronics open.     

Highly reliable copper dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier Layer

Copper (Cu) dual-damascene interconnects with a self-formed MnSi/sub x/O/sub y/ barrier layer were successfully fabricated. Transmission electron microscopy shows that approximately 2-nm thick and continuous MnSi/sub x/O/sub y/ layer was formed at the interface of Cu and dielectric SiO/sub 2/, and that no barrier was formed at the via bottom because no oxygen was at the via bottom during annealing. No leakage-current increase was observed, and electron energy loss analysis shows that no Cu was in SiO/sub 2/, suggesting that MnSi/sub x/O/sub y/ layer has sufficient barrier properties for Cu, and that the concept of self-forming barrier process works in Cu dual-damascene interconnects. Via chain yield of more than 90% and 50% reduction in via resistance were obtained as compared with physical vapor deposited tantalum barrier, because there is no barrier at the via bottom. In addition, no failure in the stress-induced voiding measurement was found even after a 1600-h testing. No failure in electromigration (EM) testing was found, as the electron flow is from the lower level interconnects through via up to upper level interconnects even after 1000-h testing. At least, four times EM lifetime improvement was obtained in the case of electron flow from upper level interconnect through via down to lower level interconnects. Significant EM lifetime improvement is due to no flux divergence site at the via bottom, resulting from there being no bottom barrier at the via.     

Domain dislocation: a change of core structure in periplasmic binding proteins in their evolutionary history

Periplasmic binding proteins (PBPs) serve as receptors for various water-soluble ligands in ATP-binding cassette (ABC) transport systems, and form one of the largest protein families in eubacterial and archaebacterial genomes. They are considered to be derived from a common ancestor, judging from their similarities of three-dimensional structure, their mechanism of ligand binding and the operon structure of their genes. Nevertheless, there are two types of topological arrangements of the central beta-sheets in their core structures. It follows that there must have been differentiation in the core structure, which we call "domain dislocation", in the course of evolution of the PBP family. To find a clue as to when the domain dislocation occurred, we constructed phylogenetic trees for PBPs based on their amino acid sequences and three-dimensional structures, respectively. The trees show that the proteins of each type clearly cluster together, strongly indicating that the change in the core structure occurred only once in the evolution of PBPs. We also constructed a phylogenetic tree for the ABC proteins that are encoded by the same operon of their partner PBP, and obtained the same result. Based on the phylogenetic relationship and comparison of the topological arrangements of PBPs, we obtained a reasonable genealogical chart of structural changes in the PBP family. The present analysis shows that the unidirectional change of protein evolution is clearly deduced at the level of protein three-dimensional structure rather than the level of amino acid sequence.     

The 97 kDa linear IgA bullous dermatosis antigen is not expressed in a patient with generalized atrophic benign epidermolysis bullosa with a novel homozygous G258X mutation in COL17A1

Most populations and some species of ticks of the genera Boophilus (5 spp.) and Rhipicephalus (ca. 75 spp.) cannot be distinguished phenotypically. Moreover, there is doubt about the validity of species in these genera. I studied the entire second internal transcribed spacer (ITS 2) rRNA of 16 populations of rhipicephaline ticks to address these problems: Boophilus microplus from Australia, Kenya, South Africa and Brazil (4 populations); Boophilus decoloratus from Kenya; Rhipicephalus appendiculatus from Kenya, Zimbabwe and Zambia (7 populations); Rhipicephalus zambesiensis from Zimbabwe (3 populations); and Rhipicephalus evertsi from Kenya. Each of the 16 populations had a unique ITS 2, but most of the nucleotide variation occurred among species and genera. ITS 2 rRNA can be used to distinguish the populations and species of Boophilus and Rhipicephalus studied here. Little support was found for the hypothesis that B. microplus from Australia and South Africa are different species. ITS 2 appears useful for phylogenetic inference in the Rhipicephalinae because in genetic distance, maximum likelihood, and maximum parsimony analyses, most branches leading to species had >95% bootstrap support. Rhipicephalus appendiculatus and R. zambeziensis are closely related, yet their ITS 2 sequences could be distinguished unambiguously. This lends weight to a previous proposal that Rhipicephcalus sanguineus and Rhipicephalus turanicus, and Rhipicephalus pumilio and Rhipicephalus camicasi, respectively, are conspecific, because each of these pairs of species had identical sequences for ca. 250 bp of ITS 2 rRNA.     

Osteoclastogenesis inhibitory factor exhibits hypocalcemic effects in normal mice and in hypercalcemic nude mice carrying tumors associated with humoral hypercalcemia of malignancy

In the present study, we attempted to determine the extent to which an anterior capsulorrhexis carried out during cataract surgery contracts postoperatively. The size of the continuous curvilinear capsulorrhexis (CCC) was measured at the end of surgery and at the final follow-up examination in 52 eyes of 40 patients who underwent phacoemulsification/aspiration and implantation of an intraocular lens (IOL) with 6-mm optics. Images obtained by video during surgery and by slit-lamp microscopy were used to determine the CCC size with reference to the optics of the IOL. The average CCC size was 5.0 mm at the end of surgery; it contracted to 4.4 mm by the final postoperative examination. The contraction of the anterior capsule progressed rapidly in the first 50 days following surgery and then gradually thereafter. The extent of contraction was greater in older patients. The smaller the CCC size immediately after surgery, the more rapidly it contracted. The size of the capsulorrhexis contracted an average of 22% following cataract surgery. The contraction rate tended to be higher in older patients. The results suggest that the capsulorrhexis carried out in cataract surgery for elderly patients should be sufficiently large, but not larger than the optics size of the IOL.     

Internal oxidation in gold alloys containing small amounts of Fe and Sn

Internal oxidation was observed in gold-rich alloys as substrates for porcelain veneers in dental restorations, which contain small amounts of Fe and Sn. The internal oxidation proceeded with oxygen ions diffusing to the inner part of the alloy through Fe₂O₃ formed at the grain boundaries of the alloy matrix. SnO₂ was formed internally together with the Fe₂O₃. The external oxidation zone was composed of only Fe₂O₃ in a wide range of Fe and Sn concentrations. Fe₃O₄ was formed with Fe₂O₃ in the Sn-rich composition range by reduction of Fe₂O₃ in the presence of Sn. A band mainly composed of SnO₂ was formed at the inside of the internal oxidation zone in the composition range where Fe₃O₄ formed. In the Sn-rich alloys this internal oxidation band of SnO₂ moved to the external oxidation zone.     

Optical topography: practical problems and new applications

We will briefly review the present status of optical topography and then discuss the method of improving practicality, i.e., the signal-to-noise (S/N) ratio and the spatial resolution in observations of higher-order brain functions. The optimum wavelength pair improved the S/N ratio sixfold for deoxyhemoglobin, and new configurations of light irradiation and detection positions doubled the spatial resolution. We also report on developing application fields of optical topography. This modality will bridge the gap between natural sciences, neuroscience, and pedagogy, and show actual real-time brain activity.     

Microstructure and anodic polarization behavior of experimental Ag–18Cu–15Pd–12Au alloy in aqueous sulfide solution

The anodic corrosion behavior of an experimental Ag–15Pd–18Cu–12Au alloy in 0.1% Na₂S solution in relation to its microstructure was investigated using potentiodynamic and potentiostatic polarization techniques with analyses of corrosion products by X-ray diffractometry, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The role of Pd in improvement of the corrosion resistance was also investigated. In the potential/current density curve, three distinct current peaks, at –520 mV (peak I), –425 mV (peak II) and –175 mV (peak III), were observed. The Ag-rich ₂ matrix with coarse Cu and Pd-rich lamellae was the most corrosion-susceptible region, and this region was preferentially corroded at peak I with the formation of granular deposits of Ag₂S. A small amount of Ag–Cu mixed sulfide deposited on the Cu and Pd-rich coarse particles and dissolution of Ag as AgO^– might have occurred in parallel with Ag₂S formation at peak II. Enrichment of Pd on the alloy surface occurred at peak III due to preferential dissolution of Ag and Cu. A high level of corrosion resistance was attained with the formation of a thin Pd-rich sulfide film, which enhanced the passivity of the alloy in an alkaline sulfide solution. It was found that passivity is an important phenomenon not only for base metal alloys but also for noble metal alloys to maintain high levels of resistance to corrosion and tarnishing in sulfide environments.     

A High-Speed, High-Sensitivity Digital CMOS Image Sensor With a Global Shutter and 12-bit Column-Parallel Cyclic A/D Converters

This paper presents a high-speed, high-sensitivity 512times512 CMOS image sensor with column parallel cyclic 12-bit ADCs and a global electronic shutter. Each pixel has a charge amplifier for high charge-to-voltage conversion gain despite of using a large-size photodiode, and two sample-and-hold stages for the global shutter and fixed pattern noise (FPN) canceling. High-speed column-parallel cyclic ADC arrays with 12-bit resolution having a small layout size of 0.09 mm ² are integrated at both sides of image array. A technique for accelerating the conversion speed using variable clocking and sampling capacitance is developed. A digital gain control function using 14-bit temporal digital code is also set in the column parallel ADC. The fabricated chip in 0.25-mum CMOS image sensor technology achieves the full frame rate in excess of 3500 frames/s. The in-pixel charge amplifier achieves the optical sensitivity of 19.9 V/lxmiddots. The signal full scale at the pixel output is 1.8 V at 3.3-V supply and the noise level is measured to be 1.8mV_rms, and the resulting signal dynamic range is 60 dB