Superconductivity in dilute Cu-Nb-Sn alloys containing Nb3Sn precipitates

The dilute Cu-Nb-Sn alloys containing small amounts of Nb and Sn less than 1 at % exhibited superconductivity after quenching from the liquid state and ageing. The best superconducting properties ( andJ _c=130 A cm^–2) in a Cu-0.30 at % Nb 0.15 at % Sn alloy were obtained when the sample was aged at 550° C for 384 h. This sample exhibited a structure of fine Nb₃Sn precipitates of 200 to 500Å diameter distributed homogeneously in the Cu matrix, and therefore it was concluded that superconductivity in these alloys resulted from the proximity effect of Nb₃Sn particles. In spite of the similar structure obtained by ageing at 800° C, the Cu-Nb-Sn alloys showed inferior superconducting properties compared to the Cu-0.4 at % Nb alloy and this would be explained qualitatively by the difference in the mean free path in the two alloys.     

Microstructure and yield strength of UDIMET 720LI alloyed with Co-16.9 Wt Pct Ti

We proposed a new method for developing Ni-base turbine disc alloy for application at temperatures above 700 °C by mixing a Ni-base superalloy U720LI with a two-phase alloy Co-16.9 wt pct Ti in various contents. The microstructure and phase stability of the alloys were analyzed using an optical microscope, a scanning electron microscope, energy-dispersive spectroscopy, and an X-ray diffractometer. The yield strength was studied by compression tests at temperatures ranging from 25 °C to 1200 °C. The results show that all the alloys had a dendritic structure. Ni₃Ti (η) phase was formed in the interdendritic region in the alloys with the addition of Co-16.9 wt pct Ti, and its volume fraction increased with the increase in the addition of Co-16.9 wt pct Ti. The results of exposure at 750 °C show that the addition of Co-16.9 wt pct Ti to U720LI had a great effect on suppressing the formation of σ phase due to the reduced Cr content in the γ matrix. Compared to U720LI, the alloys with the addition of Co-16.9 wt pct Ti possessed higher yield strength. The solid-solution strengthening of γ and γ′ and higher volume fraction of γ′ were assumed to cause this strength increase.     

双束强辐照对氧化物弥散强化铁素体型合金强化相稳定性影响

采用双束复合辐照装置,研究了He存在条件下,强辐照对长期时效后的ODS合金中强化相(Y2O3)的稳定性和辐照损伤特征的影响。实验结果表明:双束强辐照下,ODS合金中强化相不稳定,发生聚集长大并造成附近基体中Ti、Y浓度增高,导致空洞尺寸和空洞肿胀增加,并对这一结果从理论上进行解释。     

Ultra-high voltage electron microscopy: Past,present, and future

High voltage electron microscopy has shown numerous advantages for the study of natural science, including biology, but it is especially useful in materials science. The most important advantage for materials science is in-situ experiments on detailed processes of the same phenomena that occur in bulk materials. For such in-situ experiments, the specimens should be thicker than a few microns to observe the behavior of lattice effect. The maximum observable thickness of the specimens and other advantages markedly increase with increasing accelerating voltage, and since 1965, two 3 MV instruments have been installed. The present paper is mainly concerned with these 3 MV electron microscopes and their applications to new research fields.     

A Technique to Eliminate Redundant Inter-Processor Communication on Parallelizing Compiler TINPAR

Optimizing inter-processor (PE) communication is crucial for parallelizing compilers for message-passing parallel machines to achieve high performance. In this paper, we propose a technique to eliminate redundant inter-PE messages. This technique utilizes data-flow analysis to find a definition point that corresponds to a use point where the definition and the use occur in different PEs. If several read accesses occurred in the same PE use the data defined at the same definition point in another PE, redundant inter-PE messages are eliminated as follows: only one inter-PE communication is performed for the earliest read access and the previously received data are used for the following read. In order to guarantee the consistency of the data, a valid flag and a sent flag are provided for each chunk of received data. The control of these flags is equivalent to the coherence control by the self invalidation on a compiler aided cache coherence scheme.     

Fabrication of heterostructures of halogen-bridged quasi-one-dimensional mixed-valence transition metal complexes

Single-heterostructure crystals of a series of halogen-bridged quasi-one- dimensional mixed-valence transition metal complexes (HMMCs) were fabricated by selective coordination epitaxial growth (SCE growth). The overgrowth crystals of the HMMC were grown on the columnar crystals of the substrate HMMC in solution. The single-heterostructure crystals were epitaxially grown only when the two HMMCs had similar crystal structures. If their crystal structures were different, no heterostructure crystal was grown. This result suggests that the degree of mismatch between the crystal structures of the substrate and the overgrowth is the predominant factor which determines the SCE growth of the HMMCs.     

Identification of Multiple Domains of Entamoeba histolytica Intermediate Subunit Lectin-1 with Hemolytic and Cytotoxic Activities

Galactose and N-acetyl-D-galactosamine-inhibitable lectin of Entamoeba histolytica have roles in the pathogenicity of intestinal amoebiasis. Igl1, the intermediate subunit lectin-1 of E. histolytica, has been shown to have both hemolytic and cytotoxic activities that reside in the C-terminus of the protein. To identify the amino acid regions responsible for these activities, recombinant proteins were prepared and used in hemolytic and cytotoxic assays. The results revealed that Igl1 has multiple domains with hemolytic and cytotoxic activities and that amino acids 787-846, 968-1028 and 1029-1088 are involved in these activities. The hemolytic activities of the fragments were partly inhibited by mannose, galactose and N-acetylgalactosamine, and glucose showed lower or negligible inhibitory effects for the activities. This is the first report of a protozoan protein with hemolytic and cytotoxic activities in multiple domains.     

Uterine Deletion of Bmal1 Impairs Placental Vascularization and Induces Intrauterine Fetal Death in Mice

Recently, it was demonstrated that the expression of BMAL1 was decreased in the endometrium of women suffering from recurrent spontaneous abortion. To investigate the pathological roles of uterine clock genes during pregnancy, we produced conditional deletion of uterine Bmal1 (cKO) mice and found that cKO mice could receive embryo implantation but not sustain pregnancy. Gene ontology analysis of microarray suggested that uterine NK (uNK) cell function was suppressed in cKO mice. Histological examination revealed the poor formation of maternal vascular spaces in the placenta. In contrast to WT mice, uNK cells in the spongiotrophoblast layer, where maternal uNK cells are directly in contact with fetal trophoblast, hardly expressed an immunosuppressive NK marker, CD161, in cKO mice. By progesterone supplementation, pregnancy could be sustained until the end of pregnancy in some cKO mice. Although this treatment did not improve the structural abnormalities of the placenta, it recruited CD161-positive NK cells into the spongiotrophoblast layer in cKO mice. These findings indicate that the uterine clock system may be critical for pregnancy maintenance after embryo implantation.     

The Main Progress of Perovskite Solar Cells in 2020–2021

Perovskite solar cells (PSCs) emerging as a promising photovoltaic technology with high efficiency and low manufacturing cost have attracted the attention from ...     

A Low-Loss Built-In Current Sensor

This paper presents a novel built-in current sensor that uses two additional power supply voltages besides the system power supply voltage, and that is constructed by using a current mirror circuit to pick up an abnormal IDDQ. It is activated only by an abnormal quiescent power supply current and minimizes the voltage drop at the terminal of the circuit under test. Simulation results showed that it could detect 16-A IDDQ against 0.03-V voltage drop at 3.3-V VDD and that it reduced performance degradation in the circuit under test. It is therefore suitable for testing low-voltage integrated circuits. Moreover, we verified the behavior of the sensor circuit implemented on the board by using discrete devices. Experimental results showed that the real circuit of the sensor functioned properly.