Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^L and EX^U) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.     

Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Tunnel electroresistance in ferroelectric tunnel junctions (FTJs) has attracted considerable interest, because of a promising application to nonvolatile memories. Development of ferroelectric thin‐film devices requires atomic‐scale band‐structure engineering based on depolarization‐field effects at interfaces. By using FTJs consisting of ultrathin layers of the prototypical ferroelectric BaTiO₃, it is demonstrated that the surface termination of the ferroelectric in contact with a simple‐metal electrode critically affects properties of electroresistance. BaTiO₃ barrier‐layers with TiO₂ or BaO terminations show opposing relationships between the polarization direction and the resistance state. The resistance‐switching ratio in the junctions can be remarkably enhanced up to 10⁵% at room temperature, by artificially controlling the fraction of BaO termination. These results are explained in terms of the termination dependence of the depolarization field that is generated by a dead layer and imperfect charge screening. The findings on the mechanism of tunnel electroresistance should lead to performance improvements in the devices based on nanoscale ferroelectrics.     

3D Micromolding of Arrayed Waveguide Gratings on Upconversion Luminescent Layers for Flexible Transparent Displays without Mirrors,Electrodes, and Electric Circuits

A new technique for the fabrication of arrayed waveguide gratings on upconversion luminescent layers for flexible transparent displays is reported. Ho³⁺‐ and Yb³⁺‐codoped NaYF₄ nanoparticles are synthesized by hydrothermal techniques. Transparent films consisting of two transparent polymers on the NaYF₄ nanoparticle films exhibit mechanical flexibility and high transparence in visible region. Patterned NaYF₄ nanoparticle films are fabricated by calcination‐free micromolding in capillaries. Arrayed waveguide gratings consisting of the two transparent polymers are formed on the patterned NaYF₄ nanoparticle films by micromolding in capillaries. Green and red luminescence is observed from the upconversion luminescent layers of the NaYF₄ nanoparticle films in the arrayed waveguide gratings under excitation at 980 nm laser light. Arrayed waveguide gratings on the upconversion luminescent layers are fabricated with Er³⁺‐doped NaYF₄ nanoparticles which can convert two photons at 850 and 1500 nm into single photon at 550 nm. These results demonstrate that flexible transparent displays can be fabricated by constructing arrayed waveguide gratings on upconversion luminescent layers, which can operate in nonprojection mode without mirrors, transparent electrodes, and electric circuits.     

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

A method of Al₂O₃ deposition and subsequent post-deposition annealing (Al₂O₃-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al₂O₃-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al₂O₃-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 10¹⁶-10¹⁸ cm⁻³ for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al₂O₃-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al₂O₃-PDA.     

A Low-Loss Built-In Current Sensor

This paper presents a novel built-in current sensor that uses two additional power supply voltages besides the system power supply voltage, and that is constructed by using a current mirror circuit to pick up an abnormal IDDQ. It is activated only by an abnormal quiescent power supply current and minimizes the voltage drop at the terminal of the circuit under test. Simulation results showed that it could detect 16-A IDDQ against 0.03-V voltage drop at 3.3-V VDD and that it reduced performance degradation in the circuit under test. It is therefore suitable for testing low-voltage integrated circuits. Moreover, we verified the behavior of the sensor circuit implemented on the board by using discrete devices. Experimental results showed that the real circuit of the sensor functioned properly.     

Highly Reproducible and Regulated Conductance Quantization in a Polymer‐Based Atomic Switch

A detailed understanding of the conductance quantization and resistive switching phenomena in redox‐based memories is crucial for realizing atomic‐scale memory devices and for finding the adequate design principles on which they can be based. Here, the emergence of quantized conductance states and their correlation with resistive switching characteristics in polymer‐based atomic switches are investigated using combinations of current–voltage measurements and first‐principles density functional theory (DFT) simulations. Various conductance states, including integer and half‐integer multiples of a single atomic point contact and fractional conductance variations, are observed in an Ag/polyethylene oxide/Pt device under sweeping of bias voltage. Moreover, highly controllable and reproducible quantized conductance behaviors by tuning the voltage sweep rate and the sweep voltage range, suggesting well‐controlled formation of the atomic point contact, are demonstrated. The device also exhibits longer retention times for higher conductance states. The DFT simulations reveal the transmission eigenstate of geometrically optimized atomic point contact structures and the impact of the atomic configurations and structural stability on the conductance state, which also explains their resistive switching behaviors. The well‐defined, multiple quantized conductance states observed in these polymer‐based atomic switches show promise for the development of new multilevel memory devices.     

Explanation of impact load curve in ball impact test in relation to thermal aging

Solder joints are required to have high impact strength for use in portable electronic products. To make solder joints with high impact strength, qualitative evaluation methods of impact strength are required. Ball impact tests have been widely adopted in evaluating the impact strength of solder joints because of their easy implementation. Impact load curves obtained from ball impact tests are used as an evaluation indicator of impact strength of solder joint. However, a relation between fracture behavior and impact load curve has not yet been clarified, and an explanation of the impact load curve has not yet been provided in detail. In addition to this, detailed study about the relation between IMC layer thickness and impact strength has not been performed, although the IMC layer thickness formed at the interface would significantly affect the impact strength of the solder joint. This study aimed to explain the impact load curve in the ball impact test and to reveal the effect of the IMC layer thickness on the impact strength of the solder joint. Sn–3.0Ag–0.5Cu solder was reflowed on an electroless Ni–P plated Cu substrate (Ni–P), and a ball impact test was then carried out to evaluate the impact strength. This study found that the ball impact test is effective to evaluate the interfacial strength of solder joints. In the impact load curve, it is estimated that the solder bump keeps deforming until the interfacial crack initiates (maximum load), and the interfacial crack initiates after the maximum load and propagates along the interface between the solder and Ni–P. The suitable evaluation of impact strength became possible by measuring the correspondence relation between the deformation distance of the solder bump after fracture and the energy until maximum load and the relation between the area fraction of the residual solder on the fractured pad and the energy after maximum load. And, it is proved that the impact strength decreased with increasing aging time because the growth of the IMC layer remarkably degraded the interfacial strength of the solder joint.     

研究开发适应于国际标准的SPM针尖特性表征结构

标准化是当前扫描探针显微镜领域(SPM)的一项重要工作.国际标准化组织ISO自2004年起已经将SPM标准化列入其工作框架之内,并建立了相关的分委员会、技术委员会和工作小组.本文介绍了国际上当前有关SPM标准化方面努力和主要趋势:SPM术语的标准化被认为是SPM标准化工作范围内首先需要考虑的问题,其相关标准即将发表;SPM数据管理及处理的标准化则是另一项正在进行的有利于数据访问、处理和共享的重要工作.可溯源计量型原子力显微镜(AFM)的发展解决了纳米尺度的度量问题,能够通过对标准物质进行定量分析与定标实现量值的传递.当前发展能够被计量型AFM鉴定的参考物质以及标准化仪器校正过程是实现SPM标准化之前的当务之急.为了促进SPM领域ISO标准的实现,一种新的针尖特性表征结构(tip characterizer)已经被开发出来.这种tip characterizer由超晶格组装技术实现,能够描述针尖的形状并且同时进行侧向尺度的校正.本文探讨了这种新型tip characterizer的性能.这种tip characterizer不易损坏针尖,具有很好的重复性,并能帮助实验观察分析针尖形状和结构几何特性之间的关系.