Ocular Effects of Exposure to 40, 75, and 95 GHz Millimeter Waves

The objective of this study was to develop a model of ocular damage induced by 40, 75, and 95 GHz continuous millimeter waves (MMW), thereby allowing assessment of the clinical course of ocular damage resulting from exposure to thermal damage-inducing MMW. This study also examined the dependence of ocular damage on incident power density. Pigmented rabbit eyes were exposed to 40, 75, and 95 GHz MMW from a spot-focus-type lens antenna. Slight ocular damage was observed 10 min after MMW exposure, including reduced cornea thickness and reduced transparency. Diffuse fluorescein staining around the pupillary area indicated corneal epithelial injury. Slit-lamp examination 1 day after MMW exposure revealed a round area of opacity, accompanied by fluorescence staining, in the central pupillary zone. Corneal edema, indicative of corneal stromal damage, peaked 1 day after MMW exposure, with thickness gradually subsiding to normal. Three days after exposure, ocular conditions had almost normalized, though corneal thickness was slightly greater than that before exposure. The 50% probability of ocular damage (DD₅₀) was in the order 40?>?95?≈?75 GHz at the same incident power densities.     

Assemblies of Functional Peptides and Their Applications in Building Blocks for Biosensors

This feature article highlights our recent applications of functional peptide nanotubes, self‐assembled from short peptides with recognition elements, as building blocks to develop sensors. Peptide nanotubes with high aspect ratios are excellent building blocks for a directed assembly into device configurations, and their combined structures with nanometric diameters and micrometric lengths enables to bridge the “nanoworld” and the “microworld”. When the peptide‐nanotube‐based biosensors, which incorporate molecular recognition units, apply alternating current probes to detect impedance signals, the peptide nanotubes behave as excellent building blocks of the transducer for the detection of target analyes such as pathogens, cells, and heavey metal ions with high specificity. In some sensor configurations, the electric signal can be amplified by coupling them with ion‐specific mineralization via molecular recognition of peptides. In general the detection limit of peptide nanotube chips sensors is very low and the dynamic range of detection can be widened by improved device designs.     

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (I_ON), inversion charge density normalized by a peripheral length of channel cross-section (Q_inv) and effective carrier mobility (μ_eff). The I_ON was evaluated at the overdrive voltage (V_OV) of 1.0 V, which is the difference between gate voltage (V_g) and the threshold voltage (V_th), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high I_ON of 1600 μA/μm of the channel width (w_NW) of 19 nm and height (h_NW) of 12 nm with the gate length (L_g) of 65 nm. We have separated the amount of on-current per wire at V_OV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total I_ON of the SiNW nFET with L_g of 65 nm. Higher Q_inv at V_OV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (w_NW = 19 nm and h_NW = 12 nm). We also obtained high μ_eff of the SiNW FETs compared with that of SOI planar nFETs. The μ_eff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μ_eff around corners is obtained than the original μ_eff of the SiNW nFETs. The higher μ_eff and the large fractions of I_ON and Q_inv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.     

The influence of dopant species on thermal stability of NiSi film

We investigated the relationship between thermal stability of NiSi films and the implanted dopant species on Si substrates. The most stable NiSi layer appeared on Boron-implanted Si substrate, where the formation of pseudo-epitaxial transrotational structure was observed, just in case that the dose of boron is more than 5e15 atoms/cm². This unique crystallographic orientation of NiSi film on Boron-implanted substrate is a key role of thermal stability because thermal stress at grain boundary can be diminished by peculiar arrangement of transrotational domains, owing to the anisotropy in coefficient of thermal expansion (CTE) of NiSi.     

Threshold for Millimeter-Wave (60 GHz)-Induced Ocular Injury

Journal of Infrared, Millimeter, and Terahertz Waves - Millimeter waves (MMW) absorbed by skin or cornea may induce damage by heat. We have developed a 60 GHz MMW exposure-induced eye...     

Nanoimprint with thin and uniform residual layer for various pattern densities

Pattern density variation is uncomfortable for nanoimprint lithography which uses a moldable material supplied as a thin film, because the variation of pattern density causes variations of residual layer thickness reflecting on the local pattern density. To solve the problem, a new type of mold “capacity-equalized mold”, which has constant averaged depth regardless of pattern density, was fabricated and the structure of the mold was inspected. UV nanoimprint was then carried out using the mold and thickness and uniformity of the residual layer were investigated. An average thickness of 33.2 nm with a standard deviation of 3.4 nm was obtained for the mold pattern layout with a pattern density of from 0.25 to 0.75. It was found that a standard deviation of 1.2 nm was achieved for pattern density variation of from 0.33 to 0.67 by excluding artifacts.     

Bisanthracene‐Based Donor–Acceptor‐type Light‐Emitting Dopants: Highly Efficient Deep‐Blue Emission in Organic Light‐Emitting Devices

Deep‐blue fluorescent compounds are particularly important in organic light‐emitting devices (OLEDs). A donor–accepotor (DA)‐type blue‐emitting compound, 1‐(10‐(4‐methoxyphenyl)anthracen‐9‐yl)‐4‐(10‐(4‐cyanophenyl)anthracen‐9‐yl)benzene ( BD3 ), is synthesized, and for comparison, a nonDA‐type compound, 1,4‐bis(10‐phenylanthracene‐9‐yl)benzene ( BD1 ) and a weak DA‐type compound, 1‐(10‐phenylanthracen‐9‐yl)‐4‐(10‐(4‐cyanophenyl)anthracen‐9‐yl)‐benzene ( BD2 ), are also synthesized. The twisted conformations of the two anthracene units in the compounds, confirmed by single crystal X‐ray analysis, effectively prevent π‐conjugation, and the compound shows deep‐blue photoluminescence (PL) with a high PL quantum efficiency, almost independent of the solvent polarity, resulting from the absence of an intramolecular charge transfer state. The DA‐type molecule BD3 in a non‐doped device exhibits a maximum external quantum efficiency (EQE) of 4.2% with a slight roll‐off, indicating good charge balance due to the DA‐type molecular design. In the doped device with 4,4′‐bis(N‐carbazolyl)‐1,1′‐biphenyl (CBP) host, the BD3 exhibits higher EQE than 10% with Commission International de L'Eclairge (CIE) coordinates of (0.15, 0.06) and a narrow full‐width at half‐maximum of 45 nm, which is close to the CIE of the high definition television standard blue.     

Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer

We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of devices, it can cause serious damage to organic layers. In this report, we fabricate devices that are free from plasma damage by introducing a 1%-Li-doped electron transport layer (ETL). The difference of external electroluminescence quantum efficiency between OLEDs with the structure ITO/α-NPD/ETL/Al (where ITO is indium tin oxide and α-NPD is N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) with Al cathodes deposited by conventional evaporation or sputtering is 0.1%, and their driving voltage is identical. We find that the Li-doped ETL should be thicker than 40 nm. Analysis of the depth profile of the ETL by time-of-flight secondary ion mass spectrometry indicates that considerable damage from sputtering extended to a depth of approximately 30 nm, suggesting that high-energy particles penetrated about 30 nm into the ETL.     

High-Density Frenkel Defects as Origin of N-Type Thermoelectric Performance and Low Thermal Conductivity in Mg3Sb2-Based Materials

Mg₃Sb₂-based intermetallic compounds with exceptionally high thermoelectric performance exhibit unconventional n-type dopability and anomalously low thermal conductivity, attracting much attention to the underlying mechanisms. To date, investigations have been limited to first-principle calculations and thermodynamic analysis of defect formation, and detailed experimental analysis on crystal structure and phonon modes has not been achieved. Here, a synchrotron X-ray diffraction study clarifies that, against a previous view of a simple crystal structure with a small unit cell, Mg₃Sb₂ is inherently a heavily disordered material with Frenkel defects, charge-neutral defect complexes of cation vacancies and interstitials. Ionic charge neutrality preserved in Mg₃Sb₂ is responsible for exotic n-type dopability, which is unachievable for other Zintl phase materials. The thermal conductivity of Mg₃Sb₂ exhibits deviation from the standard T⁻¹ temperature dependency with strongly limited phonon transport due to a strain field. Inelastic X-ray scattering measurement reveals enhanced phonon scattering induced by disorder. The results will draw renewed attention to crystal defects and disorder as means to explore new high-performance thermoelectric materials.     

Oxidation of Fe (II) in sulfuric acid solutions with dissolved molecular oxygen

The oxidation of Fe(II) with dissolved molecular oxygen was studied in sulfuric acid solutions containing 0.2 mol . dm^-3 FeSO₄ at temperatures ranging from 343 to 363 K. In solutions of sulfuric acid above 0.4 mol . dm^-3, the oxidation of Fe (II) was found to proceed through two parallel paths. In one path the reaction rate was proportional to both [Fe²⁺]² and po₂, exhibiting an activation energy of 51.6 . kJ mol^-1. In another path the reaction rate was proportional to [Fe²⁺]², [SO_4-], and po₂ with an activation energy of 144.6 kJ . mol^-1. A reaction mechanism in which the SO_4- ions play an important role was proposed for the oxidation of Fe(II). In dilute solutions of sulfuric acid below 0.4 mol . dm^-3, the rate of the oxidation reaction was found to be proportional to both [Fe(II)]² and Po₂, and was also affected by [H⁺] and [SO_2- ⁴]. The decrease in [H⁺] resulted in the increase of reaction rate. The discussion was further extended to the effect of Fe (III) on the oxidation reaction of Fe (II).