A multigigabit DRAM technology with 6F2 open-bitlinecell, distributed overdriven sensing, and stacked-flash fuse

A multigigabit DRAM technology was developed that features a low-noise 6F² open-bitline cell with fully utilized edge arrays, distributed overdriven sensing for operation below 1 V, and a highly reliable post-packaging repair scheme using a stacked-flash fuse. This technology, which can be used to fabricate a 0,13-μm 180-mm² 1-Gb DRAM assembled in a 400-mil package, was verified using a 57.6-mm², 200-MHz array-cycle, 256-Mb test chip with 0.109-μm² cells     

Removal of Interlayer Water of two Ti3C2Tx MXenes as a Versatile Tool for Controlling the Fermi-Level Pinning-Free Schottky Diodes with Nb:SrTiO3

Striving for the sixth-generation communication technology discovery, semiconductors beyond Si with wider bandgaps as well as non-conventional metals are actively being sought to achieve high speeds whilst maintaining devices miniaturization. 2D materials may provide the potential for downsizing, but their functional advantage over existing counterparts still longs to be discovered. Along that path, surface-adsorbed or bulk-intercalated water molecules remaining after wet-chemical synthesis of 2D materials are generally seen as obstacles to high-performance achievement. Herein, the control of such water within the interlayers of solution-processed metallic 2D titanium carbide (MXene) by vacuum annealing duration is demonstrated. Moreover, the impact of water removal on work function (WF) and functional terminations is unveiled for the first time. Furthermore, the usefulness of such water for controlling a novel Schottky diode in contact with an n-type oxide semiconductor, niobium-doped strontium titanate (Nb:SrTiO₃) is observed. The advantage of MXene compared to conventional gold as facile processing, WF tunability, and lower turn-on voltage in the Schottky anode application is highlighted. This fundamental study shows the way for a novel Schottky diode preparation in atmospheric conditions and provides implications for further research directions aiming at commercialization.     

Lithium Phenolate Complexes with a Pyridine‐Containing Polymer for Solution‐Processable Electron Injection Layers in PLEDs

A series of (vinylphenyl)pyridine‐based polymer binders, PVPh2Py, PVPh3Py, and PVPh4Py, are designed and synthesized and it is found that mixtures of Liq and the polymers exhibit superior electron injection characteristics as ultrathin (1.6 nm) electron injection layer (EIL) films. They are comparable to those of EILs composed only of Liq. The addition of the polymers does not deteriorate the performance of Liq EILs. Additionally, when the EIL thickness is increased from 1.6 nm to 16 nm, the driving voltages increase and the external quantum efficiencies decrease. The increase in the voltage and decrease in the EQE are suppressed in the device with mixed EILs compared to those observed for the device composed of 100 wt% Liq. Furthermore, the position of the nitrogen in the pyridine ring is considered to influence the electron transport properties of the EILs. The mixing PVPh4Py with Liq improves the driving voltage of the fabricated devices, even with a thick mixed EIL. This reduced dependence of the performance of EILs on their thickness will be advantageous for the coating of large areas using solution processes.     

Efficient electron transport in 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl and the applications in white organic light emitting devices

The electron transport capability of 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl (α-NPD) was investigated by fundamental physical measurements named as current–voltage (I–V) electrical property evaluation and displacement current measurement (DCM). In electron-dominated devices, the I–V characteristics of α-NPD were similar as that of (8-hydroxyquinolino) aluminum (Alq₃) owing to their same order of electron mobilities. The interface of Al/LiF and α-NPD was proven to be an Ohmic contact through the evaluation of I–V characteristics at low bias regime (<3 V). And an electron injection barrier, 0.21 eV, at Al/LiF/α-NPD was obtained by extrapolating the temperature dependent I–V curves. The electron transport behavior in α-NPD film was further confirmed by DCM evaluations. Furthermore, an efficient white organic light emission device was successfully fabricated by using α-NPD as hole transport layer and electron transport layer, respectively.     

Solution Growth and Thermoelectric Properties of Single-Phase MnSi<Subscript>1.75−<Emphasis Type="Italic">x</Emphasis></Subscript>

We have investigated the crystal growth of single-phase MnSi_1.75−x by a temperature gradient solution growth (TGSG) method using Ga and Sn as solvents and MnSi_1.7 alloy as the solute, and measured the thermoelectric properties of the resulting crystals. Single-phase Mn₁₁Si₁₉ and Mn₄Si₇ crystals were grown successfully using Ga and Sn as solvents, respectively. The typical size of a grown ingot of Mn₁₁Si₁₉ was 2 mm to 4 mm in thickness and 12 mm in diameter, whereas Mn₄Si₇ had polyhedral shape with dimensions in the range of several millimeters. The single-phase Mn₁₁Si₁₉ has good electrical conduction (ρ = 0.89 × 10⁻³ Ω cm to 1.09 × 10⁻³ Ω cm) compared with melt-grown multiphase higher-manganese silicide (HMS) crystals. The Seebeck coefficient, power factor, and thermal conductivity were 77 μV K⁻¹ to 85 μV K⁻¹, 6.7 μW cm⁻¹ K⁻² to 7.2 μW cm⁻¹ K⁻², and 0.032 W cm⁻¹ K⁻¹, respectively, at 300 K.     

Context-Based Network and Application Management on Seamless Networking Platform

A context-based adaptive communication system is introduced for use in heterogeneous networks. Context includes the user's presence, location, available network interfaces, network availability, network priority, communication status, terminal features, and installed applications. An experimental system was developed to clarify the feasibility of using context information to flexibly control networks and applications. The system operates on a seamless networking platform we developed for heterogeneous networks. By using contexts, the system can inform the caller and callee of applications they can access, which are available through the network before communication occurs. Changes in contexts can switch an on-going application to another during actual communication. These functions provide unprecedented styles of communication. A business scenario for a seamless networking provider is also presented. Dr. Morikawa has also been in charge of NICT's Mobile Networking Group. Masugi Inoue received his B.E. from Kyoto University in 1992 and his M.E. and D.E. from the University of Tokyo in 1994 and 1997, all in the field of Electrical Engineering. He is currently a senior researcher at the Yokosuka Radio Communications Research Center under the National Institute of Information and Communications Technology (NICT), Japan, and has been engaged in R&D on ultrahigh-speed WLANs and mobile networking. He joined the Communications Research Laboratory (CRL) of the Ministry of Posts and Telecommunications, Japan, in 1997, which was reorganized as NICT in April 2004. He was a visiting researcher at Polytechnic University in Brooklyn, New York in 2000. Khaled Mahmud received his B.Sc. (Eng.) in Electrical and Electronics Engineering from the Bangladesh University of Engineering and Technology in Dhaka in 1991. He received his M.E. and Ph.D. in the same field from Shizuoka University in Japan, in 1997 and 2000, respectively. He was a research fellow at NICT, Japan, from 2000 to 2004. He is currently an Assistant Professor in the Department of Computer Science and Engineering at North South University, Bangladesh. His research interests include modulation-demodulation techniques, software radio, mobile communication systems, wireless Internet, and IP mobility technologies. Homare Murakami received his B.E. and M.E. in Electronic Engineering from Hokkaido University in 1997 and 1999. In 2004, he received the Young Investigators Award from IEICE. He is currently a researcher at NICT's Mobile Networking Group. He is also an industrial PhD student in Aalborg University since 2003. His interest areas are naming scheme, wireless TCP and new transport protocol, IP mobility, fast handover method, and location management. Mikio Hasegawa received his B. Eng, M. Eng., and Dr. Eng. in 1995, 1997, and 2000 from Science University of Tokyo. From 1997 to 2000, he was a Research Fellow of the Japan Society for the Promotion of Science (JSPS). He is currently a senior researcher in Mobile Networking Group, National Institute of Information and Communications Technology, and a technical advisor in ChaosWare Inc. His research interests include applications of chaotic dynamical theory, combinatorial optimization, mobile networks, and ubiquitous computing. Hiroyuki Morikawa received his B.E., M.E., and D.E. in Electrical Engineering from the University of Tokyo in 1987, 1989, and 1992. He is currently an Associate Professor in the Department of Frontier Informatics at the University of Tokyo and is in charge of NICT's Mobile Networking Group. His research interests are in the areas of computer networks, mobile computing/networks, ubiquitous computing, and network services. He serves as Editor of Transactions of the IEICE and has been on the technical program committees of IEEE/ACM conferences and workshops. He sits on numerous telecommunications advisory committees and frequently serves as a consultant to the government.     

Observation of iron silicide formation by plan-view transmission electron microscopy

The formation and the phase transitions of iron silicide by solid-phase epitaxy have been investigated by means of plan-view transmission electron microscopy, which enables us to observe a clean interface between Fe and Si. Layers of Fe were deposited on Si (100) at room temperature in an ultrahigh vacuum chamber. The sample was annealed in the electron microscope at a temperature between 673 and 1073 K. After annealing at 673 K, FeSi crystallites were formed with various orientations. When the annealing temperature was increased to 973 K, we found that the crystallites suddenly started to coalesce into grains of several hundreds of nanometers in size and polycrystalline beta-FeSi2 was formed. These phase transitions were also confirmed with electron energy-loss spectroscopy.     

FLUOROMETRIC DETERMINATION OF CYSTEINE IN BEER BY HIGH-PERFORMANCE LIQUID CHROMATOGRAPHY WITH PRECOLUMN DERIVATISATION

A high-performance liquid chromatographic procedure (HPLC) is described for the fluorometric determination of cysteine (CySH) in beer. Reduced CySH in beer is reacted with a fluorescent reagent, N-(9-acridinyl) maleimide (NAM), at pH 8·8 for 15 h to form a stable fluorescent derivative. The resulting reaction mixture is analysed by reversed-phase gradient elution HPLC. Under the optimised conditions for chromatography, ca 0·1 mg of CySH per litre of beer can be determined. Total CySH is determined by electrolytic reduction at a Hg pool electrode prior to the HPLC analysis. The levels of reduced and total CySH in 28 brands of commercial lager beers ranged from 0·2 to 0·9 mg/litre, and from 2·1 to 13·5 mg/litre, respectively.     

The terminal protein of the linear DNA plasmid pGKL2 shares an N-terminal domain of the plasmid-encoded DNA polymerase

The 36K protein attached at the 5′ end of the linear DNA plasmid pGKL2 from the yeast Kluyveromyces lactis was first purified and characterized. The terminal protein was purified from cells (1 kg wet weight) by ammonium sulphate precipitation and two rounds of centrifugation to equilibrium in CsCl gradients. The pGKL2 was present only in the post-microsomal supernatant. Approximately 10 mg of the purified pGKL2 was recovered and digested with DNase I. The terminal protein (final ca. 0·8 mg) was homogeneous by electrophoresis and we determined the N-terminal amino acid sequence up to ten residues, showing that it existed in the cryptic N-terminal domain of pGKL2-ORF2 (DNA polymerase) sequence.     

Electromagnetic Design Techniques for Liquid Crystal Display Driver ICs

A simple method of verifying electromagnetic interference (EMI) reduction effects for liquid crystal display (LCD) driver integrated circuits (ICs) is proposed. In this paper, we discuss correlations between radiated emissions and high-frequency currents of power system at three different levels: print circuit board (PCB) level, chip level, and functional circuit level. The EMI design points for LCD driver ICs are presented too. Simulated and measured results prove that our EMI design effectively reduces LCD EMI noise.