1.5?1.6 ?m GaInAsP/InP Integrated twin-guide lasers with first-order distributed Bragg reflectors

The room-temperature operation of 1.5?1.6 ?m GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors is reported. Single-longitudinal-mode oscillation was observed up to 1.4 times the threshold current. The temperature dependence of lasing wavelength was only 0.8 ?/degree.     

1.5 ?m phase-shifted DFB lasers for single-mode operation

Fabrication and single-mode laser oscillation were demonstrated for modified DFB lasers where the phase of the corrugations was shifted at the centre by a quarter guided-wavelength and which, in principle, provided a resonance at the Bragg wavelength and stable single-mode oscillation. Phase-shifted corrugations were fabricated using electron-beam lithography.     

A new structure for high-power TW-SLA [Travelling wavesemiconductor laser amplifier]

A structure utilizing an exponential tapered active layer to improve the saturation output power and quantum efficiency of a traveling-wave semiconductor laser amplifier is discussed. Both the spatial distributions of the carrier density and the optical field are considered in the analysis. It is shown that an optimum taper geometry for maximizing the efficiency exists and that this structure provides simultaneous improvement in the saturation output power (7 dB) and the quantum efficiency (1.5 times) compared to a conventional device     

Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength

Fabrication and lasing properties of novel GaInAsP/InP injection lasers at 1.3 μm, with buried heterostructure grown on mesa substrate and fabricated by single-step crystal growth are reported. In this mesa substrate buried heterostructure (MSB) laser, the GaInAsP active layer was grown separately on the top of a mesa structure formed along the surface of a     

Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method

The direct modulation characteristics of GaInAsP/InP d.h. lasers emitting at 1.3 ?m with various stripe widths were measured by the proposed sharp-pulse method. As a result, a flat modulation frequency response up to 1.9 GHz was observed in a laser diode with 5 ?m stripe width.     

Cellulose/syndiotactic polypropylene composites: Effects of maleated polypropylene as a compatibilizer and silanized cellulose on the morphology and tensile properties

To improve the interaction between syndiotactic polypropylene (SPP) and fibrous cellulose (FC), the effects of the addition of maleated polypropylene (MAPP) and FC surface modification with 3‐aminopropyltriethoxysilane (APTES) on SPP/FC composites were studied with respect to the morphology and the tensile properties. The addition of MAPP brought about an improvement in the interfacial adhesion between SPP and FC according to scanning electron microscopy observations and tensile testing. This improvement was, however, less effective than the improvement in the interfacial adhesion between isotactic polypropylene (IPP) and FC. SPP and MAPP partially or microscopically phase‐separated because of the IPP‐like polymer chain structure of MAPP. With respect to the compatibility between SPP and FC, FC surface modification with APTES was more suitable. The increase in Young's modulus was remarkable in the SPP/silanized FC composite with APTES. The tensile strength of the SPP/silanized FC composite with APTES was, however, considerably lower than that of the SPP/FC/MAPP composite. These results suggest that interfacial improvement between SPP and FC requires a compatibilizer or a surface modifier with a suitable primary structure. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

The α–β Transformation in Silicon Nitride Single Crystals

Single crystals of α-Si₃N₄ were annealed at 2000°–2150°C. The β phase was detected after annealing at 2150°C only when the crystals were surrounded by MgO·3Al₂O₃ or Y₂O₃ powders. On the other hand, no evidence of the α–β transformation was found when the crystals were annealed without additives. The solution–precipitation mechanism was concluded to be the dominant factor in the α–β transformation of Si₃N₄.