Rapid and comprehensive indicator for evaluation of performance of treatment processes and of river waters.

Naturally occurring UV active compounds, commonly present in almost all source waters, can be rapidly monitored by their ultraviolet absorbance at 260 nm (E260). Herein, the extent of correlation between the E260 and the removal efficiency of the hazardous contaminants, endocrine disrupters and dioxins, were investigated using various treatment and river source waters. The detection of various types of hazardous contaminants using sophisticated analytical methods, such as high resolution gas chromatography (HRGC)/high resolution mass spectrometry (HRMS) and high performance liquid chromatography (HPLC)/inductively coupled plasma (ICP)/mass spectrometry (MS), as well as various short-term bioassays, can require hours or even days for results to be obtained. The removal of the E260 correlated well with those of individual contaminants, such as endocrine disruptor chemicals and dioxins, with the various treatment processes employed. In the plots of the endocrine disrupters against the DOC/E260, a correlation was found with the endocrine activity of the Korean/Japanese river waters employed in this study.     

Formation of C4 species in the deactivation of a Pd/SiO2 catalyst during the selective hydrogenation of acetylene

The deactivation characteristics of Pd/SiO₂ in the selective hydrogenation of acetylene were correlated with changes in the amount of the C4 species produced. The amounts of butenes produced changed in parallel with the catalyst activity, indicating that the rate limiting step for butene production was the same as that for acetylene hydrogenation. On the other hand, the amount of 1,3-butadiene produced changed, showing a maximum with catalyst deactivation because 1,3-butadiene is an intermediate in the sequential reaction process which involves both the production and consumption of 1,3-butadiene. This was verified by a simultaneous TG/reaction experiment showing that 1,3-butadiene was a precursor of green oil. The catalyst showed a self-regenerative behavior in its activity and the amounts of C4 species produced during the early stage of deactivation because two opposite factors, which contributed to either the lowering or the promotion of activity, were involved in the process. A specific type of polymer species, produced during the initial period of deactivation, is proposed to be responsible for the promotion of catalyst activity.     

StoryGrid [educational computing]

The StoryGrid project undertook studying the role new interface technologies might play in education, particularly at the high school level. Unfortunately, technology often seizes center stage in high school classrooms; i.e., it becomes the topic of instruction. We believe that learning about technology would be most successful when technology is not the topic, but simply a tool used during instruction. StoryGrid, therefore, was designed to support and to enhance existing narrative activity in classrooms by adhering to the following goals: trigger reflection and interpretation, accommodate individual expression and encourage student discourse.     

Visual insights into high-resolution earthquake Simulations.

This study focuses on the visualization of a series of large earthquake simulations collectively called TeraShake. The simulation series aims to assess the impact of San Andreas Fault earthquake scenarios in Southern California. We discuss the role of visualization in gaining scientific insight and aiding unexpected discoveries.     

Exploiting ILP, TLP, and DLP with the polymorphous trips architecture

The Tera-op reliable intelligently adaptive processing system (TRIPS) architecture seeks to deliver system-level configurability to applications and runtime systems. It does so by employing the concept of polymorphism, which permits the runtime system to configure the hardware execution resources to match the mode of execution and demands of the compiler and application.     

Characterization of Ceramic Composite-Membranes Prepared by ORMOSIL Coating Sol

Sol-gel methods offer many advantages over conventional slip-casting, including the ability to produce ceramic membranes. They are purer, more homogeneous, more reactive and contain a wider variety of compositions. We produced ormosil sol using sol-gel process under different molecular weight of polymer species [polyethylene glycol (PEG) ] in total system [Tetraethyl ortho silicate(TEOS)-polyethylene glycol (PEG)]. The properties of as-prepared ormosil sol such as,viscosity, gelation time were characterized. Also, the ceramic membrane was prepared by dip-coating with synthetic sol and its micro-structure was observed by scanning electron microscopy. The permeability and rejection efficiency of membrane for oil/water emulsion were evaluated as cross-flow apparatus. The ormosil sol coated Membrane is easily formed by steric effect of polymer and it improves flux efficiency because infiltration into porous support decreased. Its flux efficiency is elevated about 200(1/m2·h) compared with colloidal sol coated membrane at point of five minutes from starting test.     

CDT进军P-OLED市场

发光聚合物P-OLED开发领导厂商并将P-OLED广泛应用在电子显示器产品上的剑桥显示技术公司(CDT),是一家于1992年在英国成立,以发展、制造并销售P-OLED材料与IP给显示器产业的公司。P-OLED隶属于有机发光二极管的一部份,是一种质地薄、重量轻且具功率效益的组件,当电流流过时就会发光。相较于其它平面显示器技术,如液晶显示器,它们提供更为强化的视觉体验与卓越的效能特性。在技术方面,2005年计有9家获授权公司给付权利金,授权金额总计达到420万美元。这些授权的客户包括Epson在内,Epson最近才发表一项使用OLED做为高亮度的光源,…     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

Presenting information on the small-screen interface: effects of table formatting

This study explored strengths and limitations of table formatting choices by engaging twenty-eight participants in information searches in online tables, presented on a small-screen interface (Palm IIIc). Table length across conditions was held constant at three screens long (24 rows total) but varied from one to three screens wide (approximately 35, 70, and 105 characters per line). Target information was positioned in either the upper left, lower left, upper right, or lower right quadrants. Data collected were time on task, error rate, and level of participants' confidence in their answers. Experimenters found that increased horizontal scrolling imposed the heaviest burden on information search. This study supports restricting table widths to one screen on handheld computers. If necessary, however, tables can go to two screens wide without critical detriment to usability. While ruled line formatting is slightly better than interface character in providing visual support for the burden of horizontal scrolling, neither formatting option adequately compensates for the added burden.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.