Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

Analysis of PLR for Shared Switch Fabrics

A modular upgrade design for packet transport switch nodes is presented where packet loss is dramatically reduced by intra‐module and inter‐module buffer sharing. This modular design offers significant cost and power reduction in a high‐data‐rate system where buffers are highly costly and power‐greedy.     

Management of the variability of vibration response levels in mistuned bladed discs using robust design concepts. Part 2: Tolerance design

The mistuning pattern on a bladed disc is controlled in Part 2 of the two-part article either by (i) imposing a small maximum allowable mistune according to the small mistuning approach or (ii) incorporating non-identical blades of specific patterns, known as the intentional mistuning approach. These approaches resemble the tolerance design stage of the Taguchi method of robust design. The first-order maximum amplification factor sensitivity in a single-degree-of-freedom (DOF)-per-sector system is derived to support a new definition of the interblade coupling ratio and to illustrate the dependence of the maximum amplification factor sensitivity on design parameters of a bladed disc. It is found that the variability of the forced vibration response levels in flexible bladed discs can be reduced by controlling the degree of mistune within realistic levels. The potential of a “linear” mistuning pattern to become an effective intentional mistuning pattern is evaluated by observing the amplification factors of bladed discs with combined intentional mistuning and additional random mistuning. A tool based on the importance sampling method is used to reduce the computational effort in determining the magnitude of intentional mistuning. Guidelines of designing bladed discs with a lower variability of forced vibration response levels are given according to the findings in casting the blade mistuning problem as a robust design problem.