局部设有钢筋砼电梯井墙的设计探讨

本文就局部设有钢筋砼电梯井的工程计算及理论分析，阐明分析了少墙的框剪结构的设计及注意问题。     

类胡萝卜素的生物利用率

本文论述了作为维生素A前体的类胡萝卜素在体内的吸收代谢过程、类胡萝卜素生物利用率的定义、影响生物利用率的因素以及测定新方法。     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.     

合成氨中置锅炉的修复

本文在分析中置锅炉失效原因的基础上，提出了详细的修复措施，为类似情况的设备修复提供了借鉴。     

职业技能鉴定质量分析初探

职业技能鉴定是推行职业资格证书制度的重要环节,鉴定的质量直接关系到职业资格证书的真实性、权威性。通过对试卷的有效性和可靠性的分析,以及对试题难度、区分度的分析,对职业技能鉴定质量的分析方法进行了探讨,阐述了质量分析在职业技能鉴定中的作用。     

宝钢研制的全氢罩式炉控制系统分析

对宝钢研制的全氢罩式炉计算机控制系统的逻辑结构、工作原理及硬件配置进行了分析.该系统与引进的系统相比,在通讯方式、程序结构、操作分析、报警和开放性等方面都有所改进.     

试论融资租赁项下的进口贸易

阐述了当前跨国公司在合同中普遍采用的融资租赁的性质及融资租赁项下的进口贸易特点。     

The Synthesis of Sulfated Titanium Oxide Nanotubes

TiO₂ nanotubes can be prepared in gram quantities by treating anatase TiO₂ powder with concentrated NaOH solution. These TiO₂ nanotubes acquired strong acidity after being impregnated with sulfuric acid solution and calcined at 300 °C. The anatase TiO₂ powder used to prepare the nanotube did not catalyze the esterification between cyclohexanol and acetic acid, while sulfated TiO₂ nanotubes were very reactive toward the esterification reaction.     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively