基于Struts框架的Web系统设计与实现

Struts框架具有组件的模块化、灵活性和重用性等优点,同时简化了基于MVC的Web应用程序的开发。文中将Struts框架技术运用到电子商务Web系统的设计与开发中,有效地分离出系统的界面显示和业务逻辑处理,降低了系统开发及维护代价,同时大大提高了系统的可重用性。     

Neurofeedback Treatment of College Students' Test on Anxiety, Depression, Personality, and Mood

Biofeedback is used to treat the mental diseases of college students, such as test anxiety, depression, personality, and mood. Anxiety of the colleague students was first tested by test anxiety scale （TAS） and then treated by biofeedback. After getting the biofeedback treatment, the students＇ TAS scores, blood volume pulse, and skin conductance were decreased, especially, their TAS scores dropped markedly. Meanwhile, the level of EEG （61 rhythm/a rhythm） and peripheral temperature increased observably. Then, neurofeedbaek （β1 rhythm/α rhythm） was applied to treat students＇ depression, personality, and mood. As a result, these three kinds of symptoms got alleviated. And their therapeutic effects based on neurofeedback were more stable, durative and less reerudescent.     

基于时空运动信息的药液异物自适应分割算法

为了能够从药液视频序列图像中准确地提取出运动异物对象,提出一种基于帧差图时空运动信息的药液异物模糊自适应阈值分割算法。首先通过4帧序列图像的隔帧差分得到2幅差分图并分别划分为5×5的图像块;然后计算对应图像分块的4阶矩以实现异物的运动信息提取;最后采用自适应阈值依据帧差图对应图像块的4阶矩之差实现运动异物的分割,并经过形态学处理去除掉噪声和空洞。为使阈值能够跟随图像块灰度变化,阈值的调整采用模糊推理依据对应块灰度均值差和方差变化自适应实现。实验及实际测试结果表明,本文所提算法较好地满足了低对比度和局部光照变化的药液异物实时检测要求,是一种实用有效的图像分割方法。     

光电跟踪的部分状态卡尔曼滤波算法研究

为得到光电跟踪目标的最小方差意义下的最优状态估计,提出将部分状态卡尔曼滤波和非线性系统的一阶线性化思想相结合,构成一种适用于光电跟踪目标的非线性卡尔曼滤波算法.同时将此方法应用到非线性测量光电跟踪系统中,并与扩展卡尔曼滤波和U卡尔曼滤波进行性能对比.仿真实验结果证明将部分状态卡尔曼滤波和非线性系统的一阶线性化思想相结合是有效可行的,而且其性能明显优于扩展卡尔曼滤波和U卡尔曼滤波.     

Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation

We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm/sup 2/ was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 /spl mu/m and contact ridge width of 10 /spl mu/m. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm/sup 2/ (equivalent to 132 A/cm/sup 2/ per well). High characteristic temperature of 138 K was also achieved from the bonded 10/spl times/1600-/spl mu/m/sup 2/ InGaAsN laser.     

改进决策树算法的应用研究

针对ID3算法倾向于取值较多的属性的特点,同时为避免特定领域主观属性影响分类结果,提出了一种改进的决策树算法。该方法利用决策树算法构造决策树,通过对分类结果中主客观属性进行标记并逻辑运算,最终得到较客观的决策信息,并进行实验验证。     

Generation of wavelength-switched optical pulse from a fiber ringlaser with an F-P semiconductor modulator and a HiBi fiber loop mirror

A simple configuration to perform wavelength switching in an actively mode-locked fiber ring laser is demonstrated. A Fabry-Perot laser diode was used as a modulator and a HiBi fiber loop mirror was used as a periodic multichannel wavelength filter in the cavity. By setting the channel spacing of nm can be achieved by tuning the fiber loop mirror filter. In the wavelength-switched process, the modulation frequency was not required to be changed     

Influence of metal layer on the transmitted spectra of SPR-based optical fiber sensor

For the surface plasmon resonance (SPR)-based optical fiber sensor with four-layer configuration (fiber core/metal/sensing layer/sample), the effects of different metals, different models (Lorentz-Drude model and Drude model) for the same metal, the thickness of metal layer, and the refractive index (RI) of sample on the transmitted spectra are investigated. The calculated results show that the real part of the refractive index of metal layer has the greatest effects on the sharp degree of the transmitted dip. Moreover, the dispersion function under four-layer configuration can be used to understand the relationship between the resonance wavelength and the thickness of metal layer.     

A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates

In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal–oxide–silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are presented in this paper. Numerical study results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for SGOI to work at high temperature.