运行电站爆破震动控制研究

结合大渡河龚咀水电站下游河床整治爆破开挖拓宽，重点研究了爆破震动对运行电站机组及其仪表的影响，探讨了爆破震动安全判据和控制标准，用了若干实际工程采用的经验指标进行对比分析，所得结论意见可供同类工程作为爆震安全控制参考。     

类胡萝卜素的命名

本根据国际理论与应用化学协会(IUPAC)所制定的命名规则和国际上认可的习惯名称，对类胡萝卜素的命名进行了详细的说明。     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

深层搅拌桩防渗墙质量通病及防治

深层搅拌桩防渗漏墙技术可靠,工序简单、易于操作和控制,造价低廉,因而在堤防工程建设中得到了广泛的应用。文章简述了该技术的施工过程,并分析了该技术的质量通病,提出了防治措施,得出实际应用效果。     

宽工作电压范围单电源CMOS误差放大器

采用0.8μm标准数字CMOS工艺(VTN0=0.836V,VTP0=0.930V),设计并流片验证了具有宽工作电压范围(3～6V),可作SOC系统动态电源管理芯片内部误差放大器应用的单电源CMOS运算放大器。该误差放大器芯核同时具有适合低电压工作,并对工艺参数变化不敏感的优点。对于相同的负载情况,在3V的工作电压下,开环电压增益AD=83.1dB,单位增益带宽GB=2.4MHz,相位裕量Φ=85.2°,电源抑制比PSRR=154.0dB,转换速率Sr=2.2V/μs;在6V工作电压下,AD=85.1dB,GB=2.4MHz,Φ=85.4°,PSRR=145.3dB,Sr=3.4V/μs。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.     

橡胶促进剂DM的合成工艺

M氧化生成DM是自由基反应机理，结合微反应器机理，采用分子氧化的反应方式，选用绿色溶剂异丙醇、环境友好型氧化剂H202，一步法制取高品质DM。对反应时间、反应温度、氧化剂用量等因素进行考察，确定最佳工艺条件为：反应时间90min，反应温度55℃，氧化剂不过量，碱过量5％，M—Na溶液M含量30％，加料时N60 min，溶剂用量为M—Na溶液质量的1．5倍，所得产品质量合格，熔点可达180℃。     

温州市龙湾段标准堤工程软土地基变形原位观测

温州市龙湾段标准堤地基土中普遍存在一层海积淤泥,其强度低,压缩性高,承载力低,不能满足标准堤填筑及水闸运行的要求。采用预压法进行地基处理,取得的地基沉降、水平位移、孔隙水压力等现场观测资料,总结分析了该段海积淤泥地基的变形规律和特点。并提供了有关的原型观测数据,其沉降曲线规律性较好。     

高抗挤厚壁套管的性能及应用效果评价

中原油田套管损坏的主要原因是现有套管强度不够,无法抵抗盐膏层段的巨大外挤力。开发了TP130TT型高抗挤厚壁套管,其强度能很好地抵抗盐膏层巨大外挤力。实验室试验表明,各项性能指标达到了设计要求,现场使用取得了很好的效果,解决了中原油田盐膏层段套管强度不足的难题。