A Fundamental 90-GHz CMOS VCO Using New Ring-Coupled Quad

A new circuit topology, named ring-coupled quad for millimeter-wave voltage controlled oscillator (VCO) design, is proposed. The proposed circuit topology provides higher open loop voltage gain than conventional cross-coupled pair. The layout of the proposed ring-coupled quad is fully symmetric without additional interconnection lines. A 90-GHz VCO using 90-nm CMOS process is implemented with this ring-coupled quad. This 90-GHz oscillator demonstrates a 2.5-GHz tuning range and higher than -20dBm output power. The proposed ring-coupled quad is suitable for the realization of high frequency VCOs     

Miniature CPW Parallel-Coupled Bandpass Filter Based on Inductive Loaded Coupled-Lines and Lumped-Element J-Inverters

This study presents a compact coplanar-waveguide (CPW) parallel-coupled bandpass filter (BPF) with good selectivity and stopband rejection. The inductive terminations are introduced to the conventional anti-parallel coupled-lines, and lumped-element J-inverters are employed, to achieve both size reduction and spurious suppression. Additionally, the inductive cross-coupling effect is introduced to obtain two transmission zeros to enhance the selectivity. Suitable equivalent-circuit model is also established as effective design tool. Specifically, this work demonstrates a compact cross-coupled fourth-order BPF in grounded-CPW configuration. Compared to the conventional filters, the proposed filters exhibit over 65% size reduction, improved selectivity, and wider stopbands up to four times the center frequency     

Embedded TFT nand-Type Nonvolatile Memory in Panel

A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications     

Defect Bragg Fiber With Low Loss for Broadband and Zero Dispersion Slow Light

Narrow bandwidth and large group velocity (v_g) dispersion are two fatal limitations of slow light in Bragg fibers. In this paper, by introducing a well-designed defect layer into the cladding of the Bragg fiber, the modal characteristics are modified by the coupling between the core mode and the defect mode. The defect location mainly determines the coupling strength and, thus, exerts a strong influence on v_g and dispersion. The defect thickness mainly determines the resonant wavelength of the defect waveguide and, thus, the wavelength where the modal coupling takes place. Consequently, the two limitations of the slow-light propagation in the Bragg fiber are overcome through proper optimization of the defect parameters. Around 1550 nm, a slow-light bandwidth up to 90 nm is achieved at an average v_g of c/5 (c is the light velocity in a vacuum) under N = 2, whereas an average v_g of c/10 is achieved with a bandwidth of 20 nm under N = 5. On the other hand, the slow-light propagation of v_g = 0.074c with both zero dispersion and zero dispersion slope is achieved, which is able to support applications requiring a subterahertz bandwidth of optical pulse. All of the fiber designs ensure sufficient low losses and good optical field distribution. The results are helpful in developing various Bragg-fiber-based slow-light devices.     

毛细管区带电泳法测定霍香正气胶囊中和厚朴酚的含量

目的:建立霍香正气胶囊中和厚朴酚含量测定的毛细管区带电泳(CZE)法.方法:采用甲醇溶解样品超声制备供试液;运行缓冲液为40mmol/L硼砂溶液,检测波长254nm.结果:和厚朴酚线性范围0.013-0.20mg/mL,r=0.9917(n=5),厚霍香正气胶囊中和厚朴酚的含量为0.1479mg/粒.结论:此方法快速简便,可用于评价霍香正气胶囊的质量.     

Novel transmitter of dark RZ signal based on external modulator

A novel transmitter to generate a dark RZ signal with tunable duty cycle and extinction ratio is proposed, by modifying the process of precoding, modulating and coding. A dark RZ signal is generated simply by using one dual-arm Mach-Zehnder LiNbO3 modulator. We demonstrate experimentally that this optical dark RZ signal can be directly measured by a conven- tional binary intensity modulation direct detection (IM-DD) receiver. When different values of duty cycles at 2.5 Gbit/s are adjusted, the experimental results show different BER curves and eye diagrams of the optical dark RZ signal.     

60GHz全双工OFDM-ROF系统的实验研究

研究了基于光外部调制的方式产生60GHz光毫米波的全双工光纤无线(ROF)通信系统。实验利用29GHzRF源产生58GHz的光载毫米波,2.5Gbit/s OFDM信号作为下行数据信号调制到光载毫米波上并传输光纤20km,在基站与用户单元实现3.3m的无线传输。同时实现了下行信号中心载波重利用作为上行信号的光载波,2.5Gbit/s的OOK信号作为上行数据信号调制到光载波上经20km上行链路光纤传输至中心站。     

Web应用漏洞分析及防御解决方案研究

Web技术在网络上的广泛应用,使得Web网站系统时刻都在遭受着各种攻击与入侵,网络上越来越泛滥的各种垃圾邮件、网络欺诈或诱骗钓鱼软件及盗号木马程序更加剧了网络用户在进行安全防护方面的困难,Web应用安全面临的问题与挑战日益严峻。针对当前常见的SQL注入与溢出、ASP攻击与破坏,列举Web应用程序不同的入侵漏洞及造成的危害程度,详细分析了应用程序代码存在的不足及防范措施,从代码设计上提出解决漏洞修补的安全技术与方法,总结出一套完整的Web应用防攻击解决方案,得出在Web应用漏洞方面防御时重点关注的几项关键内容,确保整个网络应用服务系统的安全运行。     

808nm高效率激光二极管

目前808nm高效率激光二极管产品的转换效率只有50%左右,还有很大的提升空间。通过提高欧姆接触层浓度、界面渐变和波导层掺杂等方面的外延材料结构优化,减小附加电压和电阻值,设计制作了808nm大光腔应变量子阱外延材料;并制作了200μm发光区标准单管,提取了材料内部参数,材料内损耗iα为0.67cm-1,内量子效率iη为0.88;将圆片解理成2mm腔长的巴条进行腔面镀膜,并烧结成标准单管,25℃下单管电光效率达到61.1%;将巴条烧结到微通道载体上,制作成标准微通道水冷单条阵列,水温15℃110A下输出光功率126.6W,电光转换效率62.77%。     

Si1-xGex/Si应变材料的生长及热稳定性研究

利用分子束外延（MBE）技术生长了Ge组份为0.1-0.46的Si1-xGex外延层。X射线衍射线测试表明，SiGe/Si异质结材料具有良好的结晶质量和陡峭界面，其它参数与可准确控制。通过X射线双晶衍射摆曲线方法，研究了经700℃、800℃和900℃退火后应变SiGe/Si异质结材料的热稳定性。结果表明，随着退火温度的提高，应变层垂直应变逐渐减小，并发生了应变弛豫，导致晶体质量退化；且Ge组分越小，Si1-xGex应变结构的热稳定性越好；室温下长时间存放的应变材料性能稳定。