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71.
72.
Sang C. Park 《The Visual computer》2003,19(1):38-49
A sweeping operation called polygonal extrusion is defined to improve the modeling power of CSG-based modeling. It is assumed that a 2D cross-sectional polygon (sweeping
polygon) moves in space while its containing plane is kept orthogonal to the tangent direction of the trajectory curve, a planar
polygonal chain having no self-intersections. The objective of the paper is to compute the boundary of the swept volume of
the sweeping polygon as a set of polygons (or triangles). The most significant challenge to accomplishing this objective is
the problem of trimming the swept volume. To solve the trimming problem, 2D-curve offsetting methods are employed. Two algorithms
are presented for polygonal extrusion that are based on different offsetting methods, the Voronoi diagram and PWID offset.
The proposed algorithms have been implemented and tested with various examples.
Published online: 28 January 2003 相似文献
73.
Joon C. Park Author Vitae Author Vitae 《Computer aided design》2003,35(9):807-812
Presented in this paper is a topology reconstruction algorithm from a set of unorganized trimmed surfaces. Error-prone small geometric elements are handled to give proper topological information. It gives complete topology to topologically complete models, and it is also tolerant to incomplete models. The proposed algorithm is vertex-based in that clues for topological information are searched from the set of vertices first, not from that of edges. 相似文献
74.
Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M23C6 carbide which acts as preferential sites for pitting corrosion. 相似文献
75.
Yoon Carolyn; Feinberg Fred; Hu Ping; Gutchess Angela Hall; Hedden Trey; Chen Hiu-Ying Mary; Jing Qicheng; Cui Yao; Park Denise C. 《Canadian Metallurgical Quarterly》2004,19(3):379
Understanding how aging influences cognition across different cultures has been hindered by a lack of standardized, cross-referenced verbal stimuli. This study introduces a database of such item-level stimuli for both younger and older adults, in China and the United States, and makes 3 distinct contributions. First, the authors specify which item categories generalize across age and/or cultural groups, rigorously quantifying differences among them. Second, they introduce novel, powerful methods to measure between-group differences in freely generated ranked data, the rank-ordered logit model and Hellinger Affinity. Finally, a broad archive of tested, cross-linguistic stimuli is now freely available to researchers: data, similarity measures, and all stimulus materials for 105 categories and 4 culture-by-age groups, comprising over 10,000 fully translated unique item responses. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
76.
This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling. 相似文献
77.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
78.
Min-Seok Park Vladislav P. Vislovskiy Jong-San Chang Yong-Gun Shul Jin S. Yoo Sang-Eon Park 《Catalysis Today》2003,87(1-4):205-212
Alumina-supported vanadium oxide, VOx/Al2O3, and binary vanadium–antimony oxides, VSbOx/Al2O3, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by SBET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO2 pulse methods. VSbOx/Al2O3 exhibited enhanced catalytic activity and especially on-stream stability compared to VOx/Al2O3 catalyst. Incorporation of antimony into VOx/Al2O3 increased dispersion of active VOx species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V0.43Sb0.57Ox/Al2O3 system. 相似文献
79.
A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed. 相似文献
80.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献