On the geometrical material structure of anelasticity

Summary G-structures are the geometric backbone of the theory of material uniformity in continuum mechanics. Within this geometric framework, anelasticity is seen as a result of evolving distributions of inhomogeneity reflected as material nonintegrability. Constitutive principles governing thetime evolution of the G-structure underlying the finite-strain theory of anelasticity (e.g., plasticity) are proposed. The material Eshelby stress tensor is shown to be thedriving force behind this evolution. This should allow for a thermodynamically admissible formulation of anelasticity viewed as a G-structure evolution.     

Rotation at the crack tip under uniform heat flow in an infinite medium

A complex analysis of rigid body rotation is presented. The crack-tip rotation for a line crack subjected to steady uniform heat flow is obtained in terms of thermal stress intensity factor in shear mode of the crack, the material and thermal parameters and coordinates of points close to the crack tip. The shear strip configuration is analysed on the basis of rotation and displacement at the end of the shear strip.     

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (111), Si (100) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200 V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (0001) than in Si (111). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.     

Erbium-doped silicon and porous silicon for optoelectronics

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.     

Sequential discrete multilevel automated system for recording electron-diffraction patterns

This article considers a discrete sequential multilevel automated system for recording electron-diffraction patterns. A comparative analysis is presented, along with experimental results that make it possible to evaluate the effectiveness of the technical decisions on which the device is based. The general design of the system is presented. Translated from Izmeritel'naya Tekhnika No. 5, pp. 16–18, May, 1996.     

Structural properties of inorganic materials: tungsten bronze SBN ceramics

Rare-earth doped strontium barium niobates were synthesized using usual ceramic technique. The dopants are La, Ce, Gd, Sm and Nd. The materials were characterized by XRD and density measurements. The grain sizes were determined from SEM analysis. Lattice parameters changed uniformly with rare-earth dopants in unfilled structures. Density measurements and SEM analysis confirmed only minute changes in the densities of the ceramics.     

Interfacing systems LOCA (ISLOCA) component pressure capacity methodology and typical plant results

A proposed methodology and sample results from several plant investigations are presented for evaluating the expected pressure capacity of nuclear power plant components which could potentially be subjected to Interfacing Systems LOCA (ISLOCA) conditions. Included in this evaluation are tanks, heat exchangers, filters, pumps, valves and flanged connections for systems designed for relatively low-pressure, low temperature conditions, but which could possibly be exposed to reactor coolant conditions, either through human error or isolation valve failures. The probabilities of failure, as a function of internal pressure, are evaluated as well as the variabilities associated with them. Leak rates or leak areas are estimated for the controlling modes of failure. Pressure capacities for the pipes and vessels are evaluated using limit-state analyses for the various failure modes considered. The capacities are dependent on several factors, including the material properties, modeling assumptions, and the postulated failure criteria. The failure modes for gasketed-flange connections, valves and pumps do not lend themselves to evaluation by conventional structural mechanics techniques and evaluation must rely primarily on the results from ongoing gasket research test programs and available vendor information and test data.     

Some factors affecting the electrical properties of carbon-black-loaded butyl rubber during vulcanization

Butyl rubber mixtures loaded with 70 phr general purpose furnace black (GPF) and tetramethyl thiuram disulphide (TMTD)/S as vulcanizing system were prepared. The kinetics of their electrical conductivity development during the vulcanization process were followed by using an especially devised system. It was found that the increase in the electrical conductivity during vulcanization obeys an exponential growth function with time constant τ, which markedly decreases with increasing vulcanization temperature as well as with the efficiency of the vulcanizing system. After completion of the vulcanization process, about 80 min, the samples obtained possess reasonable stability and reproducibility of electrical conductivity.     

The unsteady-state thermohydraulic calculation of a stacked core

NIKIÉT. Translated from Atomnaya Énergiya, Vol. 75, No. 4, pp. 265-269, October, 1993.