Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.     

Experimental 4<Emphasis Type="Italic">H</Emphasis>-SiC junction-barrier Schottky (JBS) diodes

4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated with local p–n junctions under the Schottky contact formed by nonequilibrium diffusion of boron. Static and dynamic characteristics of the JBS diodes are compared with those of similar 4H-SiC Schottky diodes. It is shown that, compared with ordinary Schottky diodes, the JBS diodes have leakage currents that are, on average, a factor of 200 lower at the same reverse bias. The reverse recovery charge is the same for both types of diodes and equal to the charge of majority carriers removed from the n-type base region in switching.     

Performance analysis of error propagation effects in the DFE for ATSC DTV receivers

The paper analyzes the error propagation phenomenon in the decision feedback equalizer (DFE) for the receivers of Advanced Television Systems Committee (ATSC) digital television (DTV) and presents the performance upper-limits of the DFE by comparing various error propagation cases and the no-error propagation case. As one approach to the performance limit, we consider a blind DFE, adopting a trellis decoder with a trace-back depth of 1 as a decision device. Through simulation, we show how much the DFE performance in ATSC DTV receivers is affected by error propagation. We found that while blind equalization is preferable to decision-directed (DD) equalization at signal-to-noise ratio (SNR) values less than 18 dB, DD equalization is superior to blind equalization at SNR values greater than 18 dB. In addition, symbol error rate curves quantitatively show that the performance difference in the DFE caused by error propagation becomes clearer at the trellis decoder following the DFE. The analysis results presented are very informative for developing equalization algorithms for ATSC DTV receivers.     

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn _x Sb_1−x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn _x Sb_1−x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 10¹⁸/cm³. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm², respectively, at ΔT = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb₃ as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.     

Negative giant surface potential of vacuum-evaporated tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)3] film

Negative giant surface potential was realized in a vacuum-evaporated film of tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)₃]. Electroabsorption response of the film presented an inverted polarity to that of tris(8-hydroxyquinolinolato) aluminum (Alq₃), suggesting opposite noncentrosymmetry of molecular orientation. Asymmetric dice model with molecular geometric effect has been proposed, and propyl substitution at 7 position of the ligands was indicated to affects the molecular posture on the surface to invert the polarity of noncentrosymmetry. Our results opened a new possibility of controlling molecular orientation in a film for device applications.     

Multifrequency operation modes in traveling wave tubes

Equations of the multifrequency nonlinear theory of the traveling wave tube are derived using the fundamental frequency method. Basic results of the numerical calculation of the output parameters of a traveling wave tube operating in the multifrequency mode are presented. The level of sideband components in traveling wave tubes with uniform and nonuniform slow-wave structures and the way of suppression of sideband components are investigated.     

Near‐Optimum Blind Decision Feedback Equalization for ATSC Digital Television Receivers

This paper presents a near‐optimum blind decision feedback equalizer (DFE) for the receivers of Advanced Television Systems Committee (ATSC) digital television. By adopting a modified trellis decoder (MTD) with a trace‐ back depth of 1 for the decision device in the DFE, we obtain a hardware‐efficient, blind DFE approaching the performance of an optimum DFE which has no error propagation. In the MTD, the absolute distance is used rather than the squared Euclidean distance for the computation of the branch metrics. This results in a reduction of the computational complexity over the original trellis decoding scheme. Compared to the conventional slicer, the MTD shows an outstanding performance improvement in decision error probability and is comparable to the original trellis decoder using the Euclidean distance. Reducing error propagation by use of the MTD in the DFE leads to the improvement of convergence performance in terms of convergence speed and residual error. Simulation results show that the proposed blind DFE performs much better than the blind DFE with the slicer, and the difference is prominent at the trellis decoder following the blind DFE.     

Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface

Room-temperature spectral characteristics of light-emitting diodes that are based on double InAsSbP/InAs heterostructures with an active InAs layer and a cavity formed by a wide anode contact and the structure surface and that emit near 3.3 μm are considered. The far-field pattern and the mode structure of light-emitting diodes 7.5–45 μm thick are reported, as well as the dependences of the mode position on the pump current. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 10, 2004, pp. 1270–1274. Original Russian Text Copyright ? 2004 by Zotova, Il’inskaya, Karandashev, Matveev, Remennyi, Stus’, Shustov.     

Enhanced carrier mobility and photon-harvesting property by introducing Au nano-particles in bulk heterojunction photovoltaic cells

In this study, polymer solar cells (PSCs) doped with Au nanoparticles (Au NPs) were successfully fabricated to maximize the photon-harvesting properties on the photoactive layer. In addition, a conductivity-enhanced hybrid buffer layer was introduced to improve the photon absorption properties and effectively separate the generated charges by adding Au NPs and dimethylsulfoxide (DMSO) to the PH 500 as a buffer layer. The PSC performance was optimized with a 88% improvement over the conventional PSCs (photoactive area: 225 mm², power conversion efficiency (PCE): 3.2%) by the introduction to the buffer layer of Au NPs and DMSO at 10 wt% and 1.0 wt%, respectively, and with 15 wt% Au NP doping in the photoactive layer. The internal resistance was decreased due to the increased photocurrent caused by the localized surface plasmon resonance (LSPR) effect of the Au NPs in the photoactive layer and by the improvement of carrier mobility induced by the DMSO doping of the buffer layer. As a result, the series resistance (R_S) deceased from 42.3 to 19.7 Ω cm² while the shunt resistance (R_SH) increased from 339 to 487 Ω cm².