Preparation of high‐molecular‐weight poly(vinyl alcohol) with high yield by solution polymerization of vinyl acetate in methanol using 4,4′‐azobis(4‐cyanovaleric acid)

Vinyl acetate (VAc) was solution‐polymerized at 40°C and 50°C using 4,4′‐azobis(4‐cyanovaleric acid) (ACVA) as an initiator and methanol as a solvent, and effects of polymerization temperature and initiator concentration were investigated in terms of conversion of VAc into poly (vinyl acetate) (PVAc), degree of branching (DB) for acetyl group of PVAc, and molecular weights of PVAc and resulting poly(vinyl alcohol) (PVA) obtained by saponifying with sodium hydroxide. Slower polymerization rate by adopting ACVA and lower viscosity by methanol proved to be efficient in obtaining linear high‐molecular‐weight (HMW) PVAc with high conversion and HMW PVA. PVA having maximum number–average degree of polymerization (P_n) of 4300 could be prepared by the saponification of PVAc having maximum P_n of 7900 polymerized using ACVA concentration of 2 × 10^?5 mol/mol of VAc at 40°C. Moreover, low DB of below 1 could be obtained in ACVA system, nevertheless of general polymerization temperatures of 40°C and 50°C. This suggests an easy way for producing HMW PVA with high yield by conventional solution polymerization without using special methods such as low‐temperature cooling or irradiation. © 2006 Wiley Periodicals, Inc. J Appl PolymSci 102: 4831–4834, 2006     

Fully aliphatic polyimides from adamantane‐based diamines for enhanced thermal stability,solubility, transparency,and low dielectric constant

We have synthesized a series of fully aliphatic polyimides (APIs) from bicyclo[2,2,2]oct‐7‐ene‐2,3,5,6‐tetracarboxylic dianhydride (BOCA) and various aliphatic diamines, including linear aliphatic, flexible alicyclic, and rigid adamantyl diamines. We performed the polymerization reactions using one‐step syntheses in m‐cresol at elevated temperatures without the isolation of poly(amic) acid. The chemical composition and structure of the polymers were characterized by nuclear magnetic resonance (NMR) and infrared (IR) spectrometry. The characterization data are reported from analyses using gel permeation chromatography (GPC), thermogravimetric analysis (TGA), differential scanning calorimeter (DSC), and wide‐angle X‐ray diffraction (WXAD) measurements. The polyimides are also subjected to solubility, solution viscosity, tensile strength, transparency, and dielectric constant measurements. The resultant polyimides possess well‐controlled molecular weight, reasonable intrinsic viscosity, good transparency, enhanced solubility, low dielectric constants, and high glass transition temperature, together with marginal thermal and mechanical stability. These properties were enhanced in copolyimides containing equimolar amounts of rigid and flexible moieties. These rigid‐rod APIs derived from the alicyclic dianhydride and aliphatic diamines are promising candidates as advanced materials for future applications in micro‐ and photoelectronic devices. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 102: 3316–3326, 2006     

NUCLEATION REACTIONS AND FILM GROWTH OF COPPER ON TiN USING HEXAFLUOROACETYLACETONATE COPPER(I) TRIMETHYLVINYLSILANE

In this work, the nucleation and film growth of copper on TiN chemically treated with WF₆ and air-exposed TiN by chemical vapor deposition(CVD) from hexafluoroacetylacetonate copper¹ trimethyl-vinylsilane, (HFA)Cu(TMVS), was studied. Copper grows as islands of poorly connected grains on air-exposed TiN. In contrast, copper grows as a continuous film with well-connected grains on the surface of WF₆-treated TiN. The effect of TiN surface condition has been examined using Auger electron spectros-copy(AES), X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM). On the basis of our experimental observation, and information in the literature, nucleation reaction mechanisms are proposed for the chemical vapor deposition of copper on the two different TiN samples.     

Synthesis and characterization of a series of bis(dimethyl-n-octylsilyl)oligothiophenes for organic thin film transistor applications

A series of bis-dimethyl-n-octylsilyl end-capped oligothiophenes consisting of two to six thiophene units has been synthesized and characterized to develop novel organic semiconductor materials. The UV–vis spectral data indicate that these silyl end-capped oligothiophenes have longer conjugation lengths as evidenced by the higher λ_max values than the corresponding unsubstituted thiophene oligomers. The thermal analyses indicate that the bis-silylated oligothiophenes show lower melting point (DSi-4T = 80 °C; DSi-5T = 115 °C; DSi-6T = 182 °C) than the corresponding dialkylated thiophene oligomers by 100 °C and hexamer DSi-6T exhibits a liquid crystalline mesophase at 143 °C. The α,ω-bis(dimethyl-n-octylsilyl)oligothiophenes (DSi-6T) have a remarkably high solubility in chloroform which are comparable to the corresponding α,ω-dihexyloligothiophenes. The remarkably increased solubility by these silyl end groups leads bis-silylated oligothiophenes to be applicable to solution processable devices for thin film transisitor (TFT) by utilizing a spin-coating technique. α,ω-Bis(dimethyl-n-octylsilyl)sexithiophene can be deposited as active semiconducting layer in thin film transistors, either by vacuum evaporation or by spin-coating. A high charge-carrier mobility has been obtained for both deposition techniques, μ = 4.6 × 10⁻² and 1.4 × 10⁻² cm² V⁻¹ s⁻¹, respectively.     

Thermistor behavior of PEDOT:PSS thin film

The temperature-dependent resistance changing characteristics (thermistor behaviors) of a poly(3,4-ethylenedioxythophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin film are investigated in the 30–100 °C range using Greek-cross and bar patterns. The PEDOT:PSS film was spin-coated onto a Si wafer passivated with a SiO₂ layer, and a conventional dry etching technique was used to pattern the PEDOT:PSS film in conjunction with a nitride etch mask layer. Cr/Au was used for the electrode material. It was found that the characteristic temperature (T₀) and resistivity of the PEDOT:PSS film have an inversely proportional relationship with the number of coatings and the number of interfaces between multiply coated PEDOT:PSS layers. It was also found that as the number of coatings and the number of the interfaces increase, lower temperature-dependent resistance changes are observed. The temperature coefficient of resistance (TCR) value of 60 nm thick PEDOT:PSS film was slightly larger than or comparable to that of a conventional metal (Au or Pt) thermistor. The possibility of utilizing the PEDOT:PSS thin film in thermistor applications is discussed.     

Hexafunctional poly(propylene glycol) based hydrogels for the removal of heavy metal ions

Two types of degradable poly(propylene glycol) (PPG) hydrogels that are suitable for the absorption of heavy metals have been presented. The PPG‐O‐P(O)Cl₂ fragments obtained by treating hexafunctional PPG with phosphorous oxychloride (POCl₃) react with 1,3‐propanediamine (PDA; Gel‐1 ) or PDA together with 1,2‐ethanedithiol ( Gel‐2 ), to yield cross‐linked and water‐swellable hydrogels in a one‐pot method. This protocol for the fabrication of PPG hydrogels exhibits promising advantages over prior methods including a short reaction time, mass‐production, easy separation, and high yield. A series of heavy metal ions were employed to test the adsorptive properties of the hydrogels. Gel‐2 shows better adsorption capacity than Gel‐1 for all the metal ions and the metal ions adsorption efficiency of the two types of hydrogels is in the order of Fe(III) > Pb(II) > Cd(II) > Zn(II) > Cu(II) > Ni(II) > Co(II) > Hg(II). The amounts of metal ions adsorbed increases with metal ion concentration and hydrogel dosage, but decreases with temperature. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 40610.     

Synthesis and photocatalytic performance of PVA/TiO2/graphene‐MWCNT nanocomposites for dye removal

TiO₂/graphene‐MWCNT nanocomposite was prepared using solvothermal reaction for the effective distribution of TiO₂ nanoparticles on carbonaceous materials. TiO₂/graphene‐MWCNT nanocomposite was immobilized in poly(vinyl alcohol) (PVA) matrix for a convenient recovery after wastewater purification. MWCNT was incorporated in a nanocomposite not only to prevent the restacking of graphene but also to increase the electron transfer from TiO₂. The detailed characterization of the nanocomposite was performed using SEM, EDX, XRD, XPS, and FTIR. The photocatalytic performance of PVA/TiO₂/graphene‐MWCNT nanocomposite was investigated by UV spectroscopy on the basis of degradation of organic pollutants. PVA/TiO₂/graphene‐MWCNT nanocomposite showed improved photocatalytic decomposition of more than 70% of residual dye left in case of using PVA/TiO₂/graphene nanocomposite due to the improved electron transfer and the higher adsorption of organic pollutants. PVA/TiO₂/graphene‐MWCNT nanocomposite was suitable as a promising material for the recyclable photocatalytic wastewater purification system. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 40715.     

Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Films of CeO₂ were deposited by atomic layer deposition (ALD) using a Ce(mmp)₄ [mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H₂O reactant. The growth characteristics and film properties of ALD CeO₂ were investigated. The ALD CeO₂ process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO₂ process, the effects of Ce doping into an HfO₂ gate dielectric were systematically investigated. Regardless of Ce/(Ce + Hf) composition, all ALD Ce_xHf_1?xO₂ films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the ALD HfO₂ growth rates. After high‐temperature vacuum annealing at 900°C, it was verified, based on X‐ray diffraction and high‐resolution cross‐sectional transmission electron microscopy results, that all samples with various Ce/(Ce + Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO₂ phases. In addition, the dielectric constant of the Ce_xHf_1?xO₂ films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce + Hf) concentration of ~11%.     

Microstructures and thermal conductivities of reaction sintered SiC ceramics

Abstract

Reaction sintered SiC ceramics were prepared by the silicon melt infiltration method over temperatures of 1450?1550°C. The effects of the carbon and silicon contents of the starting materials as well as the sintering temperature and time on the thermal conductivities and microstructures of the ceramic materials were studied. The thermal conductivities and microstructures of the samples were characterised using thermal conductivity measurements, X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy and mercury injection porosimetry. The results showed that sintering temperature and time as well as the carbon and silicon contents of the green specimens are the main factors affecting the microstructure and porosity of reaction bonded SiC ceramics. Increasing the reaction temperature and time decreased the porosity of the ceramics. This was due to the infiltration of the silicon melt into the ceramic specimens. The thermal conductivity and porosity of the sample sintered at 1550°C for 3 h in an argon atmosphere were 102·5 W m K^?1 and 0·3% respectively.     

Optimization of an organic photovoltaic device via modulation of thickness of photoactive and optical spacer layers

We examine the modulation effects of thicknesses of both a photoactive layer (a bulk-heterojunction (BHJ) of poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM)) and an optical spacer of a transparent metal oxide, for power conversion efficiency optimization of organic photovoltaic devices. The redistribution of the optical intensity at the photoactive layer via the thickness modulation of both layers is taken into account, to produce three-dimensional (3D) plots as a function of both layer thicknesses of 0 to 400 nm range (5 nm step), for the device efficiency optimization. The modulation pattern of absorption is produced in the 3D plot as scanning the thicknesses of both layers as a result of modulation of interference between incoming and reflected light, which can be secured by changing the effective optical path length between two electrodes of a photovoltaic device. It is also seen that the case of inserting the spacer of the higher refractive index demands finer adjustment of the spacer layer thickness to achieve the optimum device efficiency.In addition, the series resistance of the photoactive layer of the thickness range of 0 to 70 nm is taken into account to provide the 3D plots as a function of the scanned thicknesses of both layers. Inclusion of the series resistance of the photoactive layer, which is also the function of its thickness, in the simulation, indicates that the series resistance can influence qualitatively the dependence of power conversion efficiency (PCE) on the thicknesses of both layers. We also find that minimization of series resistance, e.g., by device annealing, allows not only the relevant voltage to increase but also the optimum thickness of the photoactive layer to increase, leading to more absorption of light.