Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Rotative quadrature phase-shift keying

A rotative quadrature phase-shift keying (RQPSK) modulation scheme is proposed. By rotating the QPSK signal constellation by pi /2 either clockwise or anticlockwise during a symbol duration, the conventional QPSK scheme can be modified to transmit 3 bits per symbol to achieve both power and bandwidth efficiency.<>     

Vibration control of a flexible structure using a hybrid mount

This paper presents vibration control of a flexible beam structure using a hybrid mount which consists of elastic rubber and piezoelectric stack actuator. After identifying stiffness and damping properties of the rubber and piezoelectric elements, a mechanical model of the hybrid mount is established. The mount model is then incorporated with the beam structure, and the governing equation of motion is obtained in a state space. A sliding mode controller is designed in order to actively attenuate the vibration of the beam structure subjected to high-frequency and small magnitude excitations. The controller is experimentally realized and measured control responses such as acceleration of the beam structure and force transmission through the hybrid mount are evaluated and presented in both frequency and time domains.     

A high-capacity broadband packet switch architecture based on a multilink approach

Broadband packet networks based on asynchronous transfer mode (ATM) are expected to provide a wide range of services, including motion video, voice, data and image. When these networks become prevalent, some applications such as motion video and high-speed LAN interconnections will place a very large bit rate requirement on the channels. Currently, the physical layer supported by the synchronous optical network (SONET) allows the transmission of up to 2.4 Gbit/s with the OC-48 optical interface. However, it is not feasible for the electronic packet switch to route packets at this rate on a single link. In this paper we present a design of a broadband packet switch that uses multiple links in parallel to realize a high-speed channel. This implementation permits the switch to operate at the lower link rate, which can be at 150 Mbit/s, while having the ability to support a virtual circuit at a higher rate (up to 2.4 Gbit/s). The main contribution of the design is that packet sequence on a channel is still maintained even though packets are allowed to use any of the links belonging to the same channel. Besides allowing the switch to function at a slower rate than the transmission channel rate, the implementation of the multilinks benefits from statistical multiplexing gain. Analytical results show the performance advantages of multilink design with respect to delay, throughput and packet loss probability.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

Protective effects of green tea extracts (polyphenon E and EGCG) on human cervical lesions

We investigated clinical efficacy of green tea extracts (polyphenon E; poly E and (-)-epigallocatechin-3-gallate [EGCG]) delivered in a form of ointment or capsule in patients with human papilloma virus (HPV) infected cervical lesions. Fifty-one patients with cervical lesions (chronic cervicitis, mild dysplasia, moderate dysplasia and severe dysplasia) were divided into four groups, as compared with 39 untreated patients as a control. Poly E ointment was applied locally to 27 patients twice a week. For oral delivery, a 200 mg of poly E or EGCG capsule was taken orally every day for eight to 12 weeks. In the study, 20 out of 27 patients (74%) under poly E ointment therapy showed a response. Six out of eight patients under poly E ointment plus poly E capsule therapy (75%) showed a response, and three out of six patients (50%) under poly E capsule therapy showed a response. Six out of 10 patients (60%) under EGCG capsule therapy showed a response. Overall, a 69% response rate (35/51) was noted for treatment with green tea extracts, as compared with a 10% response rate (4/39) in untreated controls (P<0.05). Thus, the data collected here demonstrated that green tea extracts in a form of ointment and capsule are effective for treating cervical lesions, suggesting that green tea extracts can be a potential therapy regimen for patients with HPV infected cervical lesions.     

Control of high common mode voltage during transthoracicdefibrillation

A high common mode voltage (V_cm) relative to earth ground is produced on the myocardium during the delivery of a defibrillator pulse and can generate a differential error signal when potential gradients are recorded with bipolar electrodes and isolation amplifiers. The error signal is proportional to V_cm, and therefore, a reduction in V_cm improves the accuracy of the potential gradient data. Experiments were conducted on 5 dogs to determine whether V_cm can be controlled using a bridge circuit. The bridge circuit consisted of a 5 kΩ power rheostat in parallel with the transthoracic resistance of the dog. The variable contact of the rheostat was connected to earth ground, and by adjusting the rheostat, V_cm on the myocardium could be varied. In each dog, 20 A shocks were delivered through stainless steel transthoracic electrodes. Point contact electrodes sutured to the epicardium were used to measure V_cm. It was determined that V_cm could be reduced to approximately zero at a given electrode on the heart. In addition, for the 5 dogs studied, the maximum measured V_cm on the heart was only 10% of the transthoracic voltage when the bridge circuit was balanced for an interior point in the heart