Solder engineering for optoelectronic packaging

In addition to providing electrical connections, solder is useful in the formation of passive, precision alignments for optoelectronic packaging. Different designs have demonstrated micrometer-level alignment accuracies, and the aligned structures are becoming more and more complex. Solder engineering has been successfully introduced into the field of optoelectronics, and it is expected to be applied to many other areas demanding low-cost, precision alignments.     

An investigation into the performance and cost effectiveness of thermosyphon solar water heaters

In this paper, the TRNSYS Simulation Program is used to investigate the monthly and annual solar fraction of a Thermosyphon Solar Water Heater and to evaluate its economic viability in terms of its life cycle savings over a conventional water heating system. The results of the simulation indicate that the yearly solar contribution of the system ranges from 63% for a high hot water consumption profile to 89% for a low consumption pattern. The payback period of the system is as low as 3 years when compared to electric water heating systems. As long as the competitor is diesel oil, the payback period increases to 7–9 years, depending on the hot water consumption profile used.     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

Degradation of junction leakage in devices subjected to gateoxidation in nitrous oxide [MOS transistors]

Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N₂O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. The authors have observed that the extent of N₂O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current     

Improved-performance, InGaAs/InGaAsP (/spl lambda/=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

Doping the waveguide core (p=2/spl times/10/sup 17/ cm/sup -1/) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (/spl lambda/=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, J/sub th/. For 2 mm long, 100 /spl mu/m wide stripe, uncoated chips J/sub th/ decreases from /spl sim/188 A/cm/sup 2/ to /spl sim/150 A/cm/sup 2/. High characteristic temperatures for J/sub th/ and the slope efficiency are obtained: T/sub 0/=215K and T/sub 1/=600K.