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Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 μΩ cm)¹ is shown as a reliable contact material to n- and p-type 6H-SiC for very high temperature applications. WC films with thicknesses of 100–150 nm were deposited by chemical vapor deposition (CVD) from a WF₆/C₃H₈/H₂ mixture at 1173 K. A method to pattern CVD-tungsten carbide is suggested. TEM analysis of as deposited samples displayed a clear and unreacted interface. The electrical investigations of the p-type 6H-SiC Schottky contacts revealed a high rectification ratio and a low reverse current density (6.1 × 10⁻⁵ A cm⁻², −10 V) up to 773 K. On n-type, a low barrier (Φ_Bn=0.79 eV) at room temperature was observed. The low Φ_Bn value suggests WC to be promising as an ohmic contact material on highly doped n-type epi-layers. We will show a temperature dependence for the barrier height of tungsten carbide contacts that can be related to the simultaneous change in the energy bandgap, which should be considered when designing SiC devices intended for high temperature operation.     

An Effective Approach for High‐Efficiency Photoelectrochemical Solar Cells by Using Bifunctional DNA Molecules Modified Photoanode

This paper firstly reports the effect of deoxyribonucleic acid (DNA) molecules extracted from chickpea and wheat plants on the injection/recombination of photogenerated electrons and sensitizing ability of dye‐sensitized solar cells (DSSCs). These high‐yield DNA molecules are applied as both linker bridging unit as well as thin tunneling barrier (TTB) at titanium dioxide (TiO₂ )/dye interface, to build up high‐efficient DSSCs. With its favorable energy levels, effective linker bridging role, and double helix structure, bifunctional DNA modifier shows an efficient electron injection, suppressed charge recombination, longer electron lifetime, and higher light harvesting efficiency, which leads to higher photovoltaic performance. In particular, a photoconversion efficiency (PCE) of 9.23% is achieved by the binary chickpea and wheat DNA‐modified TiO₂ (CW@TiO₂) photoanode. Furthermore, time‐resolved fluorescence spectroscopy measurements confirm a better electron transfer kinetics for DNA‐modified TiO₂ photoanodes, implying a higher electron transfer rate (k_ET). This work highlights a great contribution for the photoanodes that are linked with DNA molecule, which act as both bridging unit and TTB to control the charge recombination and injection dynamics, and hence, boost the photovoltaic performance in the DSSCs.     

Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O₃) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H₂, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.     

Sintering with Rigid Inclusions: Pair Interactions

The interaction between two spherical, rigid inclusions in an infinite, linearly viscous, densifying medium has been studied. The stresses in the vicinity of the two spheres are highly anisotropic, with significantly enhanced rates of densification in the gap between these particles. A pairwise-additive approximation for the densification rate of the composite is presented and compared with the composite-sphere and self-consistent models described by Scherer.     

Effect of preheating on potato texture

Preheating potatoes at 50 to 80°C has a firming effect on the cooked potato tissue. This effect is particularly pronounced at a preheating temperature of 60 to 70°C followed by cooling. Several theories have been presented in the literature to explain this firming effect: retrogradation of starch, leaching of amylose, stabilization of the middle lamellae and cell walls by the activation of the pectin methylesterase (PME) enzyme, and by the release of calcium from gelatinized starch and the formation of calcium bridges between pectin molecules. Most probably, none of these theories alone can explain the phenomenon and more than one mechanism seems to be involved. Some of these mechanisms seem to be interdependent. As an example, calcium could be considered as a link all the way through release after starch gelatinization to cross‐linking pectin substances in the cell wall and the middle lamellae, which has been demethylated by the PME enzyme. More research and “clear cut” experiments are needed in order to elucidate the role of each mechanism, especially which of them is the main contributor to the process of firming. Most probably, the calcium‐pectin‐PME mechanism plays a secondary role, that is, it only retards the collapse of the tissue structure that would otherwise occur during the final heating without preheating, and it is not the main factor of firmness.