Improved-performance, InGaAs/InGaAsP (/spl lambda/=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

Doping the waveguide core (p=2/spl times/10/sup 17/ cm/sup -1/) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (/spl lambda/=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, J/sub th/. For 2 mm long, 100 /spl mu/m wide stripe, uncoated chips J/sub th/ decreases from /spl sim/188 A/cm/sup 2/ to /spl sim/150 A/cm/sup 2/. High characteristic temperatures for J/sub th/ and the slope efficiency are obtained: T/sub 0/=215K and T/sub 1/=600K.     

A surface distortion analysis applied to the hoop/column deployablemesh reflector antenna

A practical approach is demonstrated for the deterministic analysis of surface distortions in reflector antennas, based on a first-order approximation to the aperture field phase. Measured pattern results from the 15-m-diameter hoop/column deployable mesh reflector antenna are used to demonstrate the accuracy which can be obtained with this surface distortion analysis. The only practical limitation of the first-order approximation is determined by the slope derivations of the distorted surface from the best-fit paraboloid     

Generation of high-power broad-band microwave pulses by picosecondoptoelectronic technique

A single-picosecond GaAs photoconductive switch is used to pulse excite a microwave resonant cavity, thus generating a variety of RF (radiofrequency) waveforms with picosecond synchronization. The length of the transmission line that connects the photoconductive switch and the cavity and the strength of input/output cavity coupling elements provide for continuous variation of the frequency distribution of the generated RF power. The generation of greater than 7-kW broadband microwave bursts is demonstrated     

Wide-band fiber optic signal processor

Operation of a 16-tap fiber-optic delay line configured as a bandpass filter with a fundamental frequency of 2.0 GHz over the frequency range from 0 to 12.5 GHz is discussed. Equal tap weights and spacings were used to facilitate comparison of experimental and predicted results. More than 10¹¹ analog multiplications per second are performed in this relatively simple signal processing system. Other processors for performing functions such as matched filtering and correlation can be implemented by appropriate choice of the mirror reflectances and fiber lengths     

Performance characteristics of parallel resonant convertor

Using a set of characteristic curves derived from the stateplane analysis, a novel approach to the design of the parallel resonant convertor (PRC) is presented. It will be shown that the steady-state response of the convertor can also be obtained from these characteristic curves     

Multi-H phase-coded modulations with asymmetric modulationindexes

Multi-H phase-coded modulation (MHPM) is a bandwidth-efficient modulation scheme which offers substantial coding gain over conventional digital modulation schemes. MHPM with asymmetric modulation indices corresponding to the bipolar data +1 and -1 is considered, and numerical results for the minimum Euclidean distances are provided. It is shown that performance improvements on the error probability over conventional MHPM are gained with essentially the same bandwidth and a very slight modification in implementation. The upper bounds on the error probabilities as functions of observation intervals and received E_b/N₀ are also investigated in detail. It is concluded that the concept of asymmetric modulation indices for MHPM is attractive for bandwidth and power-efficient modulation     

Survival of rotavirus SA-11 on vegetables

Survival of rotavirus on lettuce, radishes, and carrots was studied to evaluate the potential of rotavirus transmission by vegetables irrigated with wastewater. The vegetables were contaminated with rotavirus SA-11 and stored at 4°C and room temperature in covered and uncovered containers to simulate post harvest conditions. Virus decay rates were greater on radishes and carrots than lettuce. Decay rates of rotavirus on lettuce, radish, and carrot ranged from ?0·057 to ?0·479 (log₁₀ pfu/day). Rotavirus SA-11 survived on lettuce, radish, and carrot for 25 to 30 days at 4°C but at room temperature survival was very different for the various vegetables varying from 5 to 25 days. Greatest survival was always observed on the lettuce. These data suggest that rotaviruses can survive long enough on contaminated vegetables as to be transmitted by this vehicle.     

Proton and hydrogen formation by cyclohexyl benzene during overcharge of Li-ion batteries

This study provides experimental evidence for proton and hydrogen formation caused by the anodic electropolymerization of cyclohexyl benzene (CHB), which is a popular electrolyte additive for overcharge protection of lithium-ion batteries (LIBs). It is found that considerable H₂ evolution is observed in overcharged LiCoO₂/graphite cells, especially when CHB is included as an electrolyte additive. In order to confirm the proton generation during the CHB oxidation, Pt/Pt-rotating ring disc electrode (RRDE) measurements are performed in 1 M Li(C₂F₅SO₂)₂N ethylene carbonate/ethyl methyl carbonate (1/2, v/v) solutions with and without CHB. The cathodic ring current is intimately correlated to the anodic disc current, and the cathodic reaction at the ring is determined to be the reduction of the proton. The proton generation efficiency during the CHB oxidation is as high as 90%. Proton liberation is also observed during the anodic decomposition of the electrolyte solvents, although it occurs in a much less stoichiometric way compared with that during the CHB oxidation.     

Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study

Understanding how the structure of the unit-cell affects the cryogenic performance of a Si power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important step toward optimizing of the device for cryogenic operations. In this paper, numerical simulations of the Si power Double Diffused MOSFET’ (DMOS) are performed at room temperature and cryogenic temperatures. Physically based models for temperature dependent silicon properties are employed in the simulations. The performances of power DMOS’ with various unit-cell structures are compared at both room temperature and low temperatures. The effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for room temperature operation can be further optimized at cryogenic temperatures.