Aptamer‐Functionalized Multidimensional Conducting‐Polymer Nanoparticles for an Ultrasensitive and Selective Field‐Effect‐Transistor Endocrine‐Disruptor Sensors

An endocrine disruptor (ED) is a type of xenobiotic compound that can cause serious diseases related to the estrous cycle, as well as various types of cancer. At low ED concentrations, estrogen receptors may respond as they would under physiological conditions. In this work, aptamer‐functionalized multidimensional conducting‐polymer (3‐carboxylate polypyrrole) nanoparticles (A_M_CPPyNPs) are fabricated for use in an FET sensor to detect bisphenol A (BPA). The multidimensional system, M_CPPyNPs, is first produced by means of dual‐nozzle electrospray of pristine CPPyNPs and vapor deposition polymerization of additional conducting polymer. The M_CPPyNPs are then immobilized on an amine‐functionalized (–NH₂) interdigitated‐array electrode substrate, through the formation of covalent bonds with amide groups (–CONH). The amine‐functionalized BPA‐binding aptamer is then introduced in the same way as that for M_CPPyNP immobilization. The resulting A_M_CPPyNP‐based FET sensors exhibit ultrasensitivity and selectivity towards BPA at unprecedentedly low concentrations (1 fm ) and among molecules with similar structures. Additionally, due to the covalent bonding involved in the immobilization processes, a longer lifetime is expected for the FET sensor.     

Study on Characteristics of Various RF Transmission Line Structures on PES Substrate for Application to Flexible MMIC

In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone‐type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is 0.318 mm × 0.318 mm, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than –12.9 dB from 5 GHz to 50 GHz and an insertion loss better than –1.13 dB in the same frequency range.     

Effect of plasma process-induced damage on bias temperature instability of MOSFETs

For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, t_ox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage V_th and of linear drain current I_dlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of V_th and I_dlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO₂/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.     

A novel hidden station detection mechanism in IEEE 802.11 WLAN

The popular IEEE 802.11 wireless local area network (WLAN) is based on a carrier sense multiple access with collision avoidance (CSMA/CA), where a station listens to the medium before transmission in order to avoid collision. If there exist stations which can not hear each other, i.e., hidden stations, the potential collision probability increases, thus dramatically degrading the network throughput. The RTS/CTS (request-to-send/clear-to-send) frame exchange is a solution for the hidden station problem, but the RTS/CTS exchange itself consumes the network resources by transmitting the control frames. In order to maximize the network throughput, we need to use the RTS/CTS exchange adaptively only when hidden stations exist in the network. In this letter, a simple but very effective hidden station detection mechanism is proposed. Once a station detects the hidden stations via the proposed detection mechanism, it can trigger the usage of the RTS/CTS exchange. The simulation results demonstrate that the proposed mechanism can provide the maximum system throughput performance.     

Latch Applicator for Efficient Delivery of Dissolving Microneedles Based on Rapid Release of Elastic Strain Energy by Thumb Force (Adv. Funct. Mater. 11/2023)

Dissolving microneedle (DMN) is an attractive alternative to parenteral and enteral drug administration owing to its painless self-administration and safety due to non-generation of medical waste. For reproducible and efficient DMN administration, various DMN application methods, such as weights, springs, and electromagnetic devices, have been studied. However, these applicators have complex structures that are complicated to use and high production costs. In this study, a latch applicator that consists of only simple plastic parts and operates via thumb force without any external complex device is developed. Protrusion-shaped latches and impact distances are designed to accumulate thumb force energy through elastic deformation and to control impact velocity. The optimized latch applicator with a pressing force of 25 N and an impact velocity of 5.9 m s⁻¹ fully inserts the drug-loaded tip of the two-layered DMN into the skin. In an ovalbumin immunization test, DMN with the latch applicator shows a significantly higher IgG antibody production rate than that of intramuscular injection. The latch applicator, which provides effective DMN insertion and a competitive price compared with conventional syringes, has great potential to improve delivery of drugs, including vaccines.     

Modeling Transmission of Microwaves Through Dynamic Vegetation

In this paper, we develop a model for estimating canopy opacity tau for sweet corn. We estimate the refractive index based upon moisture distribution in the corn during different stages of growth. The moisture distribution was observed during two season-long field experiments. We found that the moisture content decreased linearly as the height of the corn increased, with the distribution closer to Gaussian in the fruit region during reproductive stages. The tau obtained from our model was compared to that estimated using a widely used Jackson model. In general, our tau estimates were higher than those obtained using the Jackson model, with a root mean-square difference (rmsd) of up to 0.23 Np between the two models. The tau values were used in a microwave emission model at C-band, and the model estimates of brightness were compared with field observations. We found that the model brightness temperatures matched well with observations, with rmsd values of 5.13 and 4.88 K, using our model and the Jackson model for tau, respectively.     

Optimized contrast enhancement for real-time image and video dehazing

A fast and optimized dehazing algorithm for hazy images and videos is proposed in this work. Based on the observation that a hazy image exhibits low contrast in general, we restore the hazy image by enhancing its contrast. However, the overcompensation of the degraded contrast may truncate pixel values and cause information loss. Therefore, we formulate a cost function that consists of the contrast term and the information loss term. By minimizing the cost function, the proposed algorithm enhances the contrast and preserves the information optimally. Moreover, we extend the static image dehazing algorithm to real-time video dehazing. We reduce flickering artifacts in a dehazed video sequence by making transmission values temporally coherent. Experimental results show that the proposed algorithm effectively removes haze and is sufficiently fast for real-time dehazing applications.     

Enhanced carrier mobility and photon-harvesting property by introducing Au nano-particles in bulk heterojunction photovoltaic cells

In this study, polymer solar cells (PSCs) doped with Au nanoparticles (Au NPs) were successfully fabricated to maximize the photon-harvesting properties on the photoactive layer. In addition, a conductivity-enhanced hybrid buffer layer was introduced to improve the photon absorption properties and effectively separate the generated charges by adding Au NPs and dimethylsulfoxide (DMSO) to the PH 500 as a buffer layer. The PSC performance was optimized with a 88% improvement over the conventional PSCs (photoactive area: 225 mm², power conversion efficiency (PCE): 3.2%) by the introduction to the buffer layer of Au NPs and DMSO at 10 wt% and 1.0 wt%, respectively, and with 15 wt% Au NP doping in the photoactive layer. The internal resistance was decreased due to the increased photocurrent caused by the localized surface plasmon resonance (LSPR) effect of the Au NPs in the photoactive layer and by the improvement of carrier mobility induced by the DMSO doping of the buffer layer. As a result, the series resistance (R_S) deceased from 42.3 to 19.7 Ω cm² while the shunt resistance (R_SH) increased from 339 to 487 Ω cm².     

A source degenerated LC quadrature VCO (SD-QVCO) using 0.18-μm SiGe BiCMOS

This letter presents a fully integrated BiCMOS quadrature voltage-controlled oscillator (QVCO). The QVCO consists of two nMOSFET cross-coupled oscillator stacked in series with source degenerated HBT transistors. SiGe HBT introduces low flicker noise compared to CMOS devices. To generate quadrature phase signals with strong coupling strength, the proposed design uses two MOS-coupled LC-tank cores instead of passive device-coupled cores. This source degeneration topology can improve the phase noise performance of the QVCO as compared to the sub-VCO. The proposed QVCO has been implemented with the TSMC 0.18 μm SiGe 3P6M BiCMOS process, can generate quadrature signals in the frequency range of 4.52–5.05 GHz with core power consumption of 5.76 mW at the dc bias of 1.8 V. At 4.53 GHz, phase noise at 1 MHz offset is ?124.52 dBc/Hz. The die area of the fabricated prototype is 0.453 × 0.898 mm².     

Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice

We have demonstrated high-performance InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) using polarization-induced (PI) p-InGaN-GaN superlattice. Electrical measurements show that PI LEDs produce much lower series resistance and turn-on voltage (at 20 mA) as compared to those of normal LEDs without the superlattice. It is also shown that the output power and photon wavelength of the PI LEDs remain electrically stable up to a high stress region of 200 mA. However, those of normal LEDs become electrically and optically degraded in excess of 120 mA. These results show that the use of the PI effect is very effective to the improvement of the electrical properties of LEDs.