Genetic Identification of Lophius budegassa and L. piscatorius by PCR-RFLP Analysis of a Mitochondrial tRNAGlu/Cytochrome bSegment

Identification of Lophius budegassa(black‐bellied angler) and L. piscatorius(angler) (Lophiiformes) was carried out on the amplification of a 486 bp tRNA^Glu/cytochrome b segment using the polymerase chain reaction (PCR). Direct DNA sequencing of 6 PCR products was carried out. Six restriction endonucleases (AluI, CfoI, HaeIII, HinfI, Mae, and ScrFI) with different species‐specific restriction fragment length polymorphism (RFLP) were selected. Digestions of PCR products from 30 individuals showed no intraspecific polymorphism. Double digestions (CfoI and HinfI, and HaeIII and ScrFI) were simpler and more rapid than single digestions. This technique is suitable for distinguishing tails of both Lophius species.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Accuracy of approximations in MOSFET charge models

This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.     

50 years of the IEEE Microwave Theory and Techniques Society

The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described     

Characterization of residual information for SeaWinds quality control

Recent work has shown the important properties of the wind inversion residual or maximum-likelihood estimator (MLE) for quality Control (QC) of QuikSCAT Hierarchical Data Format (HDF) observations. Since March 2000, the QuikSCAT near-real-time (NRT) Binary Universal Format Representation (BUFR) product is available. As this product is used for numerical weather prediction (NWP) assimilation purposes, a QC procedure for the BUFR product is needed. We study the behavior of the MLE in order to determine whether the HDF QC procedure is appropriate for BUFR data. A comparison using real HDF and BUFR data reveals that the MLE distributions of HDF and BUFR differ and are actually poorly correlated. One important difference between BUFR and HDF is the amount of signal averaging prior to wind inversion. The averaging reduces the number of observations used in the wind retrieval for the BUFR product as compared to HDF. We show with a simple example that different MLE distributions are indeed expected due to this averaging. We also run a simulation in order to link theory and reality and better understand the behavior of the MLE. Despite the different MLE behavior in BUFR and HDF, the quality of the retrieved winds, as compared with the European Centre for Medium-Range Weather Forecasts winds, is very similar. We develop an MLE-based QC procedure for BUFR, similarly to the one in HDF, and we compare both. The skill of the QC in BUFR is again very similar to the one in HDF, showing that despite the different MLE behavior in both formats, the properties of the MLE as a QC indicator remain very similar.     

Multiple-gate SOI MOSFETs: device design guidelines

This paper describes computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced. The Pi-gate device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. The simulation results indicate that the the Pi-gate device is a very promising candidate for future nanometer MOSFET applications.     

High-frequency small signal AC and noise modeling of MOSFETs for RFIC design

High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and f_T characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models     

Retrievals of column water vapor using millimeter-wave radiometric measurements

The airborne Millimeter-wave Imaging Radiometer (MIR) measurements conducted over the Midwest region of the continental United States during January/February 1997 and over the Alaska-Arctic region during May 1998 are used to estimate column water vapor W<0.8 g/cm/sup 2/ under a clear sky. On board the same aircraft are two other instruments, the Cloud Lidar System (CLS) and MODerate-resolution Imaging Spectrometer (MODIS) Airborne Simulator (MAS), which provide cloud cover information and independent measurements of W, respectively. The MIR-estimated W values are compared and found to be in very good agreement with those measured by rawinsondes at near concurrence. A close correlation is found between the MIR-estimated W and that estimated from the MAS near-IR reflectance ratios. Water surface emissivities at several MIR frequencies are obtained in the process of the W retrieval from several flights over the Midwest lakes. These estimated emissivities compared favorably with values calculated for a calm water surface, which are based on a di-electric permittivity model and MAS-measured surface temperatures. The results from all comparisons strongly demonstrate the soundness of the technique for estimating W.