全文获取类型
收费全文 | 609411篇 |
免费 | 9147篇 |
国内免费 | 2849篇 |
专业分类
电工技术 | 11940篇 |
技术理论 | 5篇 |
综合类 | 1501篇 |
化学工业 | 94158篇 |
金属工艺 | 22784篇 |
机械仪表 | 17538篇 |
建筑科学 | 16669篇 |
矿业工程 | 2436篇 |
能源动力 | 15008篇 |
轻工业 | 60601篇 |
水利工程 | 5600篇 |
石油天然气 | 7528篇 |
武器工业 | 256篇 |
无线电 | 73873篇 |
一般工业技术 | 112888篇 |
冶金工业 | 113571篇 |
原子能技术 | 10024篇 |
自动化技术 | 55027篇 |
出版年
2021年 | 4639篇 |
2019年 | 4104篇 |
2018年 | 6490篇 |
2017年 | 6527篇 |
2016年 | 7099篇 |
2015年 | 5670篇 |
2014年 | 9163篇 |
2013年 | 27854篇 |
2012年 | 15911篇 |
2011年 | 22162篇 |
2010年 | 17404篇 |
2009年 | 19300篇 |
2008年 | 20800篇 |
2007年 | 21223篇 |
2006年 | 18937篇 |
2005年 | 17262篇 |
2004年 | 16152篇 |
2003年 | 15573篇 |
2002年 | 15258篇 |
2001年 | 15413篇 |
2000年 | 14411篇 |
1999年 | 14799篇 |
1998年 | 33600篇 |
1997年 | 24647篇 |
1996年 | 19321篇 |
1995年 | 14956篇 |
1994年 | 13427篇 |
1993年 | 13049篇 |
1992年 | 9991篇 |
1991年 | 9472篇 |
1990年 | 9213篇 |
1989年 | 8933篇 |
1988年 | 8540篇 |
1987年 | 7214篇 |
1986年 | 7202篇 |
1985年 | 8547篇 |
1984年 | 8162篇 |
1983年 | 7229篇 |
1982年 | 6649篇 |
1981年 | 6799篇 |
1980年 | 6339篇 |
1979年 | 6402篇 |
1978年 | 6033篇 |
1977年 | 6922篇 |
1976年 | 9165篇 |
1975年 | 5175篇 |
1974年 | 4918篇 |
1973年 | 4860篇 |
1972年 | 4008篇 |
1971年 | 3563篇 |
排序方式: 共有10000条查询结果,搜索用时 46 毫秒
121.
L. Sheeney‐Haj‐Ichia S. Pogorelova Y. Gofer I. Willner 《Advanced functional materials》2004,14(5):416-424
Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation. 相似文献
122.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
123.
N. Jongen M. Donnet P. Bowen J. Lemaître H. Hofmann R. Schenk C. Hofmann M. Aoun‐Habbache S. Guillemet‐Fritsch J. Sarrias A. Rousset M. Viviani M.T. Buscaglia V. Buscaglia P. Nanni A. Testino J.R. Herguijuela 《化学工程与技术》2003,26(3):303-305
The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production. 相似文献
124.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
125.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
126.
Barch Deanna M.; Mitropoulou Vivian; Harvey Philip D.; New Antonia S.; Silverman Jeremy M.; Siever Larry J. 《Canadian Metallurgical Quarterly》2004,113(4):556
Research suggests that schizotypal personality disorder (SPD) is a part of the spectrum of schizophrenia-related illnesses. This article hypothesizes that a deficit in the representation and maintenance of context is a core cognitive disturbance in schizophrenia and that SPD individuals should demonstrate context-processing deficits. To test this hypothesis, the authors administered 3 versions of their AX-CPT task, designed to assess context processing, to 35 healthy controls and 26 individuals with DSM-IV SPD. They also administered working memory and selective attention tasks. SPD individuals displayed context representation deficits similar to those found in schizophrenia but did not show the same additional deficits in context maintenance. Context processing was strongly associated with working memory and selective attention performance in the SPD individuals. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
127.
Stability analysis of the finite difference time domain scheme containing macromodels is presented. It is shown that for a stable macromodel, the stability of the combined scheme depends on the field interpolation at the macromodel boundary. The maximal allowable time step is shown to be much larger than for subgridding. 相似文献
128.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
129.
Reekmans S. De Maeyer J. Rombouts P. Weyten L. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(12):2529-2538
Quadrature sigma-delta analog-to-digital converters require a feedback path for both the I and the Q parts of the complex feedback signal. If two separate multibit feedback digital-to-analog converters (DACs) are used, mismatch among the unit DAC elements leads to additional mismatch noise in the output spectrum as well as an I/Q imbalance. This paper proposes new quadrature bandpass (QBP) mismatch shaping techniques. In our approach, the I and Q DACs are merged into one complex DAC, which leads to near-perfect I/Q balance. To select the unit DAC elements of the complex multibit DAC, the well-known butterfly shuffler and tree structure are generalized towards a complex structure, and necessary constraints for their correct functioning are derived. Next, a very efficient first-order QBP shaper implementation is proposed. Finally, the newly presented complex structures are simulated to prove their effectiveness and are compared with each other with respect to performance 相似文献
130.
Ramanujam J. Jinpyo Hong Kandemir M. Narayan A. Agarwal A. 《Signal Processing, IEEE Transactions on》2006,54(1):286-294
Most embedded systems have limited amount of memory. In contrast, the memory requirements of the digital signal processing (DSP) and video processing codes (in nested loops, in particular) running on embedded systems is significant. This paper addresses the problem of estimating and reducing the amount of memory needed for transfers of data in embedded systems. First, the problem of estimating the region associated with a statement or the set of elements referenced by a statement during the execution of nested loops is analyzed. For a fixed execution ordering, a quantitative analysis of the number of elements referenced is presented; exact expressions for uniformly generated references and a close upper and lower bound for nonuniformly generated references are derived. Second, in addition to presenting an algorithm that computes the total memory required, this paper also discusses the effect of transformations (that change the execution ordering) on the lifetimes of array variables, i.e., the time between the first and last accesses to a given array location. The term maximum window size is introduced, and quantitative expressions are derived to compute the maximum window size. A detailed analysis of the effect of unimodular transformations on data locality, including the calculation of the maximum window size, is presented. 相似文献