底部填充工艺的瞬时温度环境管理

微电子组装的大部份工艺开发都要求将元件做到更小,以便在尺寸日益缩小的便携式设备上实现更多功能。阐述了大元件的底部填充,即一侧的尺寸超过15mm,底部填充的胶量介于30～50mg。大尺寸晶元的制造工艺要求比现有生产线更大的产能,这就给底部填充点胶带来更大的挑战。大元件的产能超过3000个/h时,需要点胶机点出非常多的胶水。如此多的胶水在出胶前通过点胶阀,这将会带来加热的问题-某些工艺要求出胶前胶水必须要加热。这会对胶点尺寸有影响,因为随着温度的变化,底部填充的胶水黏度也会随之变化,从而轻微影响点出的胶量。从而将影响晶元相邻的“非沾染区”。稳定的温度是点胶稳定性的保证,并且能帮助胶水流进晶元下方同时也有助胶水分离从而更容易喷射出来。从研究中可以观察到：系统温度环境（点胶机内部）对点胶的胶水质量有影响。     

Understanding Sexual Objectification: A Comprehensive Approach Toward Media Exposure and Girls' Internalization of Beauty Ideals,Self‐Objectification,and Body Surveillance

The relationship between exposure to sexually objectifying music television, primetime television programs, fashion magazines, and social networking sites and the internalization of beauty ideals, self‐objectification, and body surveillance was examined among adolescent girls (N = 558). A structural equation model showed direct relationships between sexually objectifying media and the internalization of beauty ideals, and indirect relationships between sexually objectifying media and self‐objectification, and body surveillance through the internalization of beauty ideals. The direct relationships between sexually objectifying media and the internalization of beauty ideals, self‐objectification, and body surveillance differed across the types of sexually objectifying media. The discussion focuses on the implications of these findings to explain self‐objectification among girls.     

Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices

We have used far-infrared oblique-incidence reflection spectroscopy to study bulk phonon polaritons, and attenuated total reflection (ATR) spectroscopy to study surface phonon polaritons, in long-period GaAs/Al_xGa_1?xAs and short-period GaAs/AlAs superlattices. Results on the former are in good agreement with an effective-medium bulk-slab model of the dielectric tensor of the superlattice; results on the latter are analysed in terms of a model that contains dielectric-tensor contributions from the confined optic phonons.     

Fatigue estimation with a multivariable myoelectric mapping function

A novel approach to muscle fatigue assessment is proposed. A function is used to map multiple myoelectric parameters representing segments of myoelectric data to a fatigue estimate for that segment. An artificial neural network is used to tune the mapping function and time-domain features are used as inputs. Two fatigue tests were conducted on five participants in each of static, cyclic and random conditions. The function was tuned with one data set and tested on the other. Performance was evaluated based on a signal to noise metric which compared variability due to fatigue factors with variability due to nonfatiguing factors. Signal to noise ratios for the mapping function ranged from 7.89 under random conditions to 9.69 under static conditions compared to 3.34-6.74 for mean frequency and 2.12-2.63 for instantaneous mean frequency indicating that the mapping function tracks the myoelectric manifestations of fatigue better than either mean frequency or instantaneous mean frequency under all three contraction conditions.     

Reliability characteristics of high-k dielectrics

In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO₂ gate dielectrics. The Weibull slope β of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be β=2, whereas that of the soft breakdown was about 1.4 (EOT=14 Å). We also integrated the time-to-breakdown characteristics of HfO₂ under unipolar AC voltage stress on MOS capacitors. The results show that longer lifetime of HfO₂ has been observed when compared to constant voltage stress. Higher frequency and lower duty cycle in the AC stress resulted in longer lifetime. As thickness decreases, the amount of lifetime enhancement decreases. The enhancement of unipolar t_BD is attributed to less charge trapping during the “on time”, t_on and charge detrapping during the off time, t_off. It is proposed that time (τ_in) for charge to be trapped in HfO₂ is longer than t_on of unipolar stress under high frequency. In addition to experimental results, possible solutions are discussed.     

Self‐Powered Distributed Water Level Sensors Based on Liquid–Solid Triboelectric Nanogenerators for Ship Draft Detecting

Ship draft measurement is of great significance for ensuring navigation safety and facilitating ship control. In this work, a self‐powered water level sensor based on a liquid–solid tubular triboelectric nanogenerator (LST‐TENG) is proposed and analyzed. The LST‐TENG is made of multiple copper electrodes uniformly distributed along a polytetrafluoroethylene (PTFE) tube. When water flows into the PTFE tube, it induces alternating flows of electrons between the main electrode and the distributed bottom electrodes. The obvious peaks in the derivative of open‐circuit voltage with respect to time are found to correspond with the electrode distribution. Then it can be utilized as a robust and sensitive indicator for detecting the water level as the number of obvious peaks in the derivative of open‐circuit voltage is directly related to the water level height. The ship draft is successfully detected using the LST‐TENG with an accuracy of 10 mm. It shows that the water level sensor has stable performance for liquid–solid interface monitoring. Therefore, this LST‐TENG is self‐powered, robust, and accurate for extensive applications in marine industry.     

Multiple-input optical control of vertical cavity surface emitting lasers using intracavity-coupled in-plane lasers

We report new experimental results demonstrating optical bistability and two-input NOR gate operation in intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material. The VCSEL (or output) section gain is controlled by separately biased in-plane laser section(s), and depending on the in-plane power output, complete quenching of stimulated emission in the VCSEL is observed. Hysteresis is present in the VCSEL output power versus in-plane laser input power characteristic, and an optical memory effect is observed in the combined device.     

SIMS characterization of HgCdTe and related II-VI compounds

The production of consistent high purity materials is critical for improvement in performance and sensitivity of II-VI photovoltaic and photoconductive devices. Information regarding the energy band structure and impurity or defect levels present in the material is essential to understand and enhance the performance of current detectors along with the development of future novel devices. Secondary ion mass spectrometry (SIMS) is capable of providing information of purity, junction depths, dopant distribution, and stoichiometry in the material. SIMS techniques can achieve high detection sensitivities in very small analytical volumes and for a wide range of elements (almost the entire periodic table). SIMS analysis also provides unique capabilities for localizing atomic distribution in two and three dimensions. Ion images can be obtained by registering the positions of mass selected ions formed in the sputtering process. The combination of excellent detection sensitivity, high mass resolution, depth profiling capability, and high resolution image acquisition on a wide spectrum of elements by a SIMS instrument is not matched by any other instrumentation technique.