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101.
102.
A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.  相似文献   
103.
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.  相似文献   
104.
The c-axis preferred orientation of ZnO film is the most important factor for its successful application in piezoelectric devices. The effects of surface roughness of the substrate on the c-axis preferred orientation of ZnO thin films, deposited by radio frequency magnetron sputtering, were investigated. During sputtering, the oxygen content in the argon environment used was varied from 0 to 70% at a total sputtering pressure of 10 mTorr. Very smooth Si, smooth evaporated Au/Si, smooth evaporated-Al/Si, and rough sputtered-Al/Si were used as substrates. Their r.m.s. roughnesses, as measured by atomic force microscopy, were 1.27, 17.1, 21.1 and 65-118 Å, respectively. The crystalline structure and the angular spread of the (0 0* 2) plane normal to the ZnO films were determined using X-ray diffraction and X-ray rocking curves, respectively. The crystallinity and the preferred c-axis orientation of the ZnO films were strongly dependent on the surface roughness of the substrates rather than on the oxygen content of the working environment or on the chemical nature of the substrate.  相似文献   
105.
A new /spl lambda//4 bias line combined by a dumb-bell shaped defected ground structure (DGS) is proposed to suppress harmonics in power amplifiers. The proposed DGS bias line maintains the required high impedance even after DGS is inserted, while the width and length of the /spl lambda//4 bias line are broader and shorter than those of conventional bias lines. When the DGS bias line is used in power amplifiers, the third harmonic components as well as the second harmonic are reduced, because of the increased slow-wave effect over wide harmonic band. It is shown that the reduction of the third harmonic component, the improvement of 1 dB compression point, and power added efficiency are 26.5 dB, 0.45 dB, and 9.1%, respectively.  相似文献   
106.
Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.  相似文献   
107.
We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/).  相似文献   
108.
109.
A new method to control the free spectral range (FSR) of a long-period fiber grating (LPFG) is proposed and theoretically analyzed. As the refractive index decreases radially outward in the silica cladding by graded doping of fluorine, waveguide dispersion in the cladding modes was modified to result in the effective indexes change and subsequently the phase-matching conditions for coupling with the core mode in a LPFG. Enlargement of the FSR in a LPFG was theoretically confirmed.  相似文献   
110.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry  相似文献   
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