Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Improved performances of a S-SEED using extremely shallowquantum-wells and asymmetric Fabry-Perot cavity structure

The authors report significantly improved performances of a symmetric self-electrooptic-effect device (S-SEED), with high on-off contrast ratio (>30:l) and large optical bistability loop widths (ΔP=44%) at an applied bias of V_a=0 V, i.e., with no power supply. The S-SEED is made of extremely shallow quantum wells (ESQWs) in an asymmetric Fabry-Perot (AFP) cavity structure. At V_a =5 V ΔP increased by up to 95%, preserving the high contrast ratio. The reflectivity changes at V_a=0 and 5 V were about 15% and 30%, respectively. These are believed to be the largest values ever reported for such structures     

Acidogenic fermentation of blended food‐waste in combination with primary sludge for the production of volatile fatty acids

The performance of a laboratory‐scale anaerobic acidogenic fermenter fed with a mixture of blended kitchen food‐waste and primary sludge from a sewage treatment plant was investigated for the production of volatile fatty acids (VFA). The operating variables for acidogenic fermentation were kitchen food‐waste content (10 and 25 wt %), hydraulic retention time (HRT: 1, 3 and 5 days), temperature (ambient: 18 ± 2 °C, and mesophilic: 35 ± 2 °C) and pH (varied from 5.2 to 6.7). The experimental results indicated that effluent VFA concentrations and VFA production rates were higher at ambient temperature than at mesophilic conditions. The net amount of VFA with 10 wt % food‐waste increased up to 920 mg dm^?3 with an increase of HRT, but contrasting results (a decrease of 2610 mg dm^?3) were found due to the conversion of VFA into biogas in the case of 25 wt % food‐waste, which increased significantly at HRT of 3–5 days. In terms of biogas composition (CO₂ and CH₄), the organic matter was converted into CO₂ through the oxidative pathway by facultative species at low temperature while mesophilic temperature and optimum pH (6.3–7.8) played a pivotal role in increasing rate of conversion of VFA into biogas by methanogenesis. Rates of VFA production and their conversion are dependent on the food‐waste content in the mixture. Yet, the higher concentration of food‐waste (25% compared with 10%) did not produce VFA proportionally due to the increased rate of conversion of VFA into gaseous products. The maximum VFA production rate (0.318 g VFA_produced g^?1 VS_fed day^?1) was achieved in the 10 wt % food‐waste at ambient temperature and at a 5‐day HRT. Copyright © 2005 Society of Chemical Industry     

Use of a neural network to link AFM etch patterns to plasma parameters

Plasmas play a critical role in depositing thin films or etching fine patterns while manufacturing integrated circuits. A new model for plasma diagnosis is presented. This was accomplished by linking atomic force microscopy (AFM) to plasma parameters using a neural network. Experimental AFM data were collected during the etching of silicon oxynitride films in C₂F₆ inductively coupled plasma. Surface roughness of etched patterns was characterized by means of discrete wavelet transformation. This led to the construction of three vertical (type I), diagonal (type II), and horizontal (type III) wavelet coefficient-based models. The performance of diagnosis models was evaluated in terms of the prediction and recognition accuracies. Both accuracies were optimized as a function of the number of hidden neurons. Comparisons revealed that the type I model yielded the largest recognition and the smallest prediction error. This was demonstrated even under stricter monitoring conditions. More improved diagnosis is expected by enhancing AFM resolution.     

Effects of ternary additions on the thermoelastic martensitic transformation of NiAl

Nickel-rich β-NiAl alloys, which are potential materials for high-temperature shape-memory alloys, show a thermoelastic martensitic transformation, which produces their shape memory effect. However, the transformation to Ni₅Al₃ phase during heating of NiAl martensite can interrupt the reversible martensitic transformation; consequently, the shape memory effect in NiAl martensite might not appear after heating. The phase transformation process in binary Ni-(34 to 37)Al martensite was investigated by differential thermal analysis (DTA) method, and we found that the condition of reversible martensitic transformation was not the β → Ni₅Al₃ transformation, but rather the M → Ni₅Al₃ transformation occurring at 250 °C to 300 °C. Therefore, the transformation temperature of M → Ni₅Al₃ determined the highest operating temperature for the shape memory effect. For verifying the critical temperature, the phase transformation process was investigated for eight ternary Ni-33Al-X alloys (X=Cu, Co, Fe, Mn, Cr, Ti, Si, and Nb). Only Ti, Si, and Nb additions were found to be effective in dropping the M _s temperature, and they facilitated the shape memory effect in Ni-33Al-X alloys. In particular, the addition of Si and Nb raised the transformation temperature of M → Ni₅Al₃, a potentially beneficial effect for shape memory at higher temperatures. This article is based on a presentation made in the symposium entitled “Fundamentals of Structural Intermetallics,” presented at the 2002 TMS Annual Meeting, February 21–27, 2002, in Seattle, Washington, under the auspices of the ASM and TMS Joint Committee on Mechanical Behavior of Materials.     

Effects of reducing and oxidizing atmospheres on the PTCR characteristics of porous n-BaTiO3 ceramics by adding polyethylene glycol

Donor doped BaTiO₃ (n-BaTiO₃) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO₃ ceramics were investigated. The PTCR characteristics of the porous n-BaTiO₃ ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO₃ ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO₃ ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries.     

Adaptive contour smoothing based on inter-region contrast

An adaptive contour smoothing algorithm designed as a preprocessor for shape coders is presented. In the method, the degree of the adaptive smoothing is controlled based on the significance of each contour point, which is quantified according to inter-region contrast in an intensity image. The actual smoothing consists of an expansion operator and a thinning algorithm.     

Synthesis of ultrafine LiCoO2 powders by the sol-gel method

Ultrafine high-temperature (HT) LiCoO₂ powders were synthesized by the sol-gel method using polyacrylic acid (PAA) as a chelating agent. The decomposition process of the gel precursor was examined to determine the crystallization temperature and the dependence of the physicochemical properties of HT-LiCoO₂ powders on the PAA quantity was extensively investigated. Polycrystalline HT-LiCoO₂ powders, composed of very uniformly sized ultrafine particulates with an average particle size of 30–50 nm and a specific surface area of 2.3–17 m²g^–1, could be obtained at the lower calcination temperature of 550 °C and the shorter calcination time of 1 h compared to the solid-state reaction.     

A 44-GHz monolithic waveguide plane-wave amplifier with improvedunit cell design [using pHEMTs]

A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. The ultra-compact unit cell had a cell size of 0.8 mm², and showed a small-signal gain of 8 dB and an output power of 15 dBm at 44 GHz with a corresponding dc-to-RF efficiency of 10%. A monolithic waveguide PWA using these unit cells showed a “flange-to-flange” gain of 5 dB, an output power of 0.3 W, and an efficiency of 2% at 44 GHz     

Breakdown probabilities for thin heterostructure avalanche photodiodes

The recurrence theory for the breakdown probability in avalanche photodiodes (APDs) is generalized to heterostructure APDs that may have multiple multiplication layers. The generalization addresses layer-boundary effects such as the initial energy of injected carriers as well as the layer-dependent profile of the dead space in the multiplication region. Reducing the width of the multiplication layer serves to both downshift and sharpen the breakdown probability curve as a function of the applied reverse-bias voltage. In structures where the injected carriers have an initial energy that is comparable to the ionization threshold energy, the transition from linear mode to Geiger-mode is more abrupt than in structures in which such initial energy is negligible. The theory is applied to two recently fabricated Al/sub 0.6/Ga/sub 0.4/As-GaAs heterostructure APDs and to other homostructure thin GaAs APDs and the predictions of the breakdown-voltage thresholds are verified.