Layout design of manufacturable quantum-dot cellular automata

Quantum-dot cellular automaton (QCA) is an emergent technology that is not hindered by quantum effects that limit the scaling of CMOS technology, but instead employs them to perform computation. However, this brings its own impediments, such as the influence of the thermodynamic effects. Beside that, QCA has to be coupled with CMOS circuitry of different size features to enable clocking. We discussed all these facts and devised a floorplan which would facilitate manufacturability. Based on it we developed the process of QCA layout design and defined the design rules that must be considered in order to ensure correct operation. These instructions enable the automatization of designing a QCA circuit layout.     

G-quadruplex formation of oligonucleotides containing ALS and FTD related GGGGCC repeat

A largely increased number of GGGGCC repeats located in the non-coding region of C9orf72 gene have been identified as the leading cause of two related neurological disorders, familial amyotrophic lateral sclerosis (ALS) and frontotemporal dementia (FTD). We examined G-quadruplex forming ability of GGGGCCrepeat containing oligonucleotides with four guanine tracts chosen as the smallest possible model to form a unimolecular G-quadruplex. These oligonucleotides are readily to folded into G-quadruplexes in the presence of K⁺ ions. However, the formation of multiple structures makes structural analysis challenging and time consuming. We observed that flanking sequences on 5'- and 3'-ends as well as mutations of loop residues have a profound effect on folding. Sequence d[(G₄C₂)₃G₄] was chosen for further scrutiny and optimization of nuclear magnetic resonance (NMR) spectroscopic properties with dG to 8Br-dG substitutions at specific positions in the sequence under different folding conditions. Expectedly, folding into desired predominant topology is facilitated when substituted residue adopted a syn conformation in the naturally-occurring structure. Single dG to 8Br-dG substitution at position 21 and fine tuning of folding conditions facilitate folding of d[(G₄C₂)₃GG^BrGG] into (mostly) a single G-quadruplex, and thus enable determination of its high-resolution structure by high-field NMR.

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高山庇护所 斯诺文尼亚

<正>建设单位:PD Ljubljana Matica项目计划:庇护所结构工程:AKT II, Hanif Kara, Edward Wilkes实施及现场协调:PD Ljubljana Matica,Matevz Jerman, Davor Rozman项目情况:2016年竣工主承包商:Permiz d.o.o., Bostjan Perme OFIS和AKT II的建筑师同哈佛大学设计研究生院、Freeaproved、PD Ljubljana Matica、Rieder和Rockwool的学生合作完成了这个项目。     

Electrochemical routes for environmentally friendly recycling of rare-earth-based (Sm–Co) permanent magnets

Journal of Applied Electrochemistry - The consumption of critical raw materials, especially those in permanent magnets of Nd–Fe–B and Sm–Co-type, has significantly grown in the...     

Internalization and Accumulation in Dendritic Cells of a Small pH‐Activatable Glycomimetic Fluorescent Probe as Revealed by Spectral Detection

DC‐SIGN, an antigen‐uptake receptor in dendritic cells (DCs), has a clear role in the immune response but, conversely, can also facilitate infection by providing entry of pathogens into DCs. The key action in both processes is internalization into acidic endosomes and lysosomes. Molecular probes that bind to DC‐SIGN could thus provide a useful tool to study internalization and constitute potential antagonists against pathogens. So far, only large molecules have been used to directly observe DC‐SIGN‐mediated internalization into DCs by fluorescence visualization. We designed and synthesized an appropriate small glycomimetic probe. Two particular properties of the probe were exploited: activation in a low‐pH environment and an aggregation‐induced spectral shift. Our results indicate that small glycomimetic molecules could compete with antigen/pathogen for binding not only outside but also inside the DC, thus preventing the harmful action of pathogens that are able to intrude into DCs, for example, HIV‐1.     

Processing and properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thick films

We have investigated the processing of 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) thick films on platinised alumina substrates. Nanosized PMN–PT powder with 2 mol% of excess PbO was prepared by high-energy milling and deposited on the substrate using screen-printing technology. The films were then sintered at 950 °C in a PbO-rich atmosphere. The influence of the sintering time and the amount of PbO-containing packing powder was studied and related to the structural, microstructural, dielectric and piezoelectric properties of the film. In order to obtain a homogeneous and dense thick film without any secondary phase, the PMN–PT films had to be sintered in the presence of a PbO-based liquid phase that had to be completely removed from the thick film during the final stage of the sintering. Under optimal sintering conditions we obtained a room temperature relative dielectric permittivity of 3600, dielectric losses of 0.036, a T_m of 174 °C, a permittivity at the T_m of 21,000 and a d₃₃ of 140 pC/N.     

Microstructural, XRD and electrical characterization of some thick film resistors

The microstructural and electrical characteristics (sheet resistivities, TCRs, and noise indices) of some 1 k/sq. and 10 k/sq. thick films were evaluated. The conductive phase was determined by X-ray diffraction (XRD) analysis. The microstructures of fired resistors were investigated by scanning electron microscopy (SEM) and analyzed by energy dispersive spectrometry (EDS). Some resistors were fired for a relatively long time at the highest temperature, i.e., 6 h at 850 °C, to allow the reactions in the material to reach equilibria. Sheet resistivities, temperature coefficients of resistivity, and noise indices of these resistors were compared with normally (10 min at 850 °C) fired resistors. After 6 h firing absolute temperature coefficient of resistivity (TCR) values of most resistors increased significantly, while sheet resistivities decreased. Complex impedance analysis showed that in most cases resistors with low noise indices showed nearly ideal resistor response while those with higher noise had a larger imaginary part.     

Electrical properties and chemical compatibility of PZT thick film on Ni substrates

The characteristics of Pb(Zr,Ti)O₃(PZT) thick films that were printed and fired on Ni substrates were studied. The dielectric characteristics of samples sintered at 850°C on Ni substrates could not be measured due to the formation of a NiO layer at the Ni/PZT interface. The scanning electron microscope and energy dispersive X-ray analysis of cross-sections of the PZT thick films on Ni substrates, and of a mixture of PZT and NiO powders, fired at 850°C, did not indicate the formation of secondary phases. However, the transmission electron microscopy showed around 8% solid solubility of NiO in the PZT. A new structure with a prefired, Au thick-film layer was designed in order to prevent the diffusion of the NiO to the PZT layer during sintering. The dielectric properties of the PZT layers printed and fired on the Ni substrates with the prefired Au electrode were significantly better than those of the layers on the uncoated substrate, the dielectric losses decreased from 0.23 to 0.05.