Boosting nitrification by membrane-attached biofilm.

Nitrification is a key step for reliable biological nitrogen removal. In order to enhance nitrification in the activated sludge (AS) process, membrane-attached biofilm (MAB) was incorporated in a conventional activated sludge tank. Simultaneous organic carbon removal and nitrification of the MAB incorporated activated sludge (AS + MAB) process was investigated with continuous wastewater treatment. The effluent TOC concentration of AS and the AS + MAB processes were about 6.3 mg/L and 7.9 mg/L, respectively. The TOC removal efficiency of both AS and AS + MAB were above 95% during the wastewater treatment, indicating excellent organic carbon removal performance in both processes. Little nitrification occurred in the AS process. On the contrary, successful nitrification was obtained with the AS + MAB process with nitrification efficiency of about 90%. The volumetric and surface nitrification rates were about 0.14 g/Ld and 6.5 g/m2d, respectively. The results clearly demonstrated that nitrification in the conventional AS process was boosted by MAB. Furthermore, the microfaunal population in the AS + MAB process was different from that in the AS process. The high concentration of rotifers in the AS + MAB process was expected to decrease the generation of excess sludge in the process.     

Optimal algorithms for adjacent side routing

We consider the switchbox routing problem of two-terminal nets in the case when all thek nets lie on two adjacent sides of the rectangle. Our routing model is the standard two-layer model. We develop an optimal algorithm that routes all the nets whenever a routing exists. The routing obtained uses the fewest possible number of vias. A more general version of this problem (adjacent staircase) is also optimally solved.This research was supported in part by NSA Contract No. MDA-904-85H-0015, NSF Grant No. DCR-86-00378, and by NSF Engineering Research Centers Program NSFD CDR 88003012.     

Estimation of failure probability from a bivariate normal stress-strength distribution

Probability (P) of equipment failure consequent upon stress exceeding built-in strength has been estimated assuming a bivariate normal stress-strength distribution. The UMVUE of P when parameters other than the means are known has been derived. An alternative estimator based on maximum likelihood estimates has been proposed in the case when all the five parameters are unknown. Asymptotic variances of both these estimators have been worked out. Some relevant numerical computations have also been reported.     

Sludge reed bed facilities: operation and problems.

Short operating periods and problems with dewatering efficiency, vegetation, mineralisation and odour are primarily caused by incorrect construction of the filter, poor capillary connections, an inadequate number of basins, insufficient basin area and overloading during commissioning and during subsequent operation. Dimensioning should be based on the sludge quality including the dewatering qualities and not solely on calculations of the sludge production. Loading after planting depends on the development level of the vegetation. The loading program should ensure that reed establishment is not impeded and should prevent the sludge residue from growing so quickly horizontally and vertically that the reeds cannot colonise the sludge residue. Overloading results in an anaerobic sludge residue with ensuing methane production. Typically, a sludge reed bed facility with a loading period of maximum 5 days, must be built with 10 basins to permit a rest phase of about 40 days. Facilities with 8 basins, where it is possible to load 1 basin for 7 days, will be able to have a 7-week rest phase before the first basin is loaded again. Facilities with for example 8-13 basins and loading period of between 4 and 10 days are able to achieve rest periods of up to 2 to 2(1/2) months, which results in the optimal evapotranspiration and minerilization. The conditions and thus the possibilities vary depending upon the type of sludge.     

Nanolayered lightweight flexible shields with multidirectional optical transparency

New nanolayered coatings are designed and deposited on flexible plastic substrate having the thickness of 100 /spl mu/m, in order to realize lightweight ultrathin transparent shielding foils. The structure of the coating is optimized considering three figures of merit: the average transmittance in the visible range for normal incidence, the normalized average transmittance for oblique incidence at 550 nm, and the transmittance quality factor. The nanotechnology exploited for the deposition of the transparent metals is the dual ion beam sputtering. Tests of durability, optical transmission, and shielding effectiveness demonstrate that the film has a high adhesion under mechanical solicitation, high resistance against aging, peak transmittance in the visible range higher than 70%, omnidirectional properties in the range 0/spl deg/-60/spl deg/, and shielding effectiveness of 40 dB up to 6 GHz.     

Optimal sequences and sum capacity of symbol asynchronous CDMA systems

The optimal signature sequences that maximize the sum capacity of a direct sequence code-division multiple-access (CDMA) system are characterized in the general case of symbol delay profile and user power constraints. It is shown that the optimal sum capacity of the symbol asynchronous system equals that of the symbol synchronous system with the same user power constraints. With the optimal signature sequence set, the maximum sum capacity is achieved with white Gaussian input signals. The existence of the optimal signature sequence set is proved by the proposal of an explicit construction method for arbitrary user delay profiles and power constraints.     

A new choice of penalty function for robust multiuser detection based on M-estimation

In this letter, we propose a new robust MUD, called /spl alpha/ detector, for non-Gaussian noise. We consider the Gaussian-mixture model for non-Gaussian or impulsive noise. Our technique outperforms the decorrelator and the minimax detectors in highly impulsive noise. The proposed method uses a parametric cost function, where the parameter /spl alpha/ is selected using the difference between the asymptotic variance of estimation error of the /spl alpha/ detector and that of the minimax detector.     

Measurement of the working parameters of an air-post vertical-cavity surface-emitting laser

We present a complete experimental evaluation of the effective parameters necessary to describe the dynamical behavior of an air-post vertical-cavity surface-emitting lasers, on the basis of theoretical equations which are also derived in this paper. The experimental investigation is composed of several steps, including power versus current measurement, noise spectrum analysis, linewidth evaluation. The complete set of parameters derived, in particular the linewidth-enhancement factor and the spontaneous emission factor, is particularly important for accurate comparisons of theoretical models on the laser dynamics with experiments.     

A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV.     

A study on charge reduction in HfO/sub 2/ gate stacks

Charge in metal-organic chemical vapor deposition-grown HfO/sub 2/ gate stacks has been systematically studied using nMOS capacitors. It is found that, for these films, the charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO/sub 2//interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 10/sup 12/ cm/sup -2/. A forming gas anneal (FGA) reduces both interface charge greatly. The FGA can also significantly reduce the hysteresis and interface state density. The effects of post deposition anneal at various temperatures and under various ambients have also been studied. It is found that a high-temperature dilute oxidizing ambient anneal followed by an FGA reduces the charge at both interfaces.