Surface Properties of Films Composed of Aluminum and Its Alloy with Lanthanum

Protection of Metals and Physical Chemistry of Surfaces - Optical constants n and k of polycrystalline films of aluminum and Al–4.45 at % La alloy have been measured at room temperature. The...     

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nanometer-thick silicon-germanium-on-insulator (SGOI) structures have been produced by the implantation of Ge⁺ ions into thermally grown SiO₂ layer and subsequent hydrogen transfer of silicon film on the Ge⁺ ion implanted substrate. The intermediate nanometer-thick Ge layer has been formed as a result of the germanium atom segregation at the Si/SiO₂ bonding interface during annealing at temperatures 800–1100 ^оС. From a thermodynamic analysis of Si/Ge/SiO₂ system, it has been suggested that the growth of the epitaxial Ge layer is provided by the formation of a molten layer at the Si/SiO₂ interface due to the Ge accumulation. The effect of germanium on the hole mobility in modulation-doped heterostructures grown over the 3–20 nm thick SGOI layers was studied. An increase in the Hall hole mobility in SGOI-based structures by a factor of 3–5 was obtained in comparison with that in respective Ge-free SOI structures.     

Electrolytic Method for Preparing Chemically Resistant Alloys for Americium Immobilization

An electrolytic method for preparing chemically resistant Am–Ni alloys was studied. Optimum electrolysis conditions ensuring the maximal (up to 95%) recovery of Am from the electrolyte with the alloy formation were found. The compositions of the alloys formed in the process were determined.     

Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide

Russian Microelectronics - SOI MOSFETs have the worst properties of heat removal from an active region, which negatively affects the reliability and efficiency of integrated circuits. Using TCAD...