A new method for the calculation of the emission spectrum of DFBand DBR lasers

A method based on transmission matrices that allows the emission spectra of arbitrarily complicated semiconductor laser structures to be computed below and above threshold has been developed. These can include active and passive periodic or uniform sections. As examples, the authors compute the emission spectra of a normal distributed feedback (DFB) laser, a DFB laser with a λ/4 phase shifter, and a surface-emitting distributed Bragg reflector (DFB) laser. To do that, Petermann's method for calculating the spontaneous emission coupling coefficient has been extended to the case of a periodic waveguide. It is shown how the spontaneous emission, when treated correctly, can be used to measure the coupling coefficient of the grating in a DFB laser with a λ/4 phase shifter     

Flexible organic P3HT:PCBM bulk-heterojunction modules with more than 1 year outdoor lifetime

Flexible organic solar cells and modules based on P3ht:PCBM bulk-heterojunctions were fabricated and their lifetime was investigated under laboratory and outdoor conditions. In the laboratory cells were exposed to 1 sun illumination at 65 °C in order to accelerate the degradation. The outdoor behavior of modules was investigated at the Konarka rooftop testing setup in Lowell, MA (USA). We show that these flexible polymer solar cells have a good light stability, passing 1000 h under accelerated light soaking conditions in the laboratory, and that flexible modules survived over 1 year of outdoor exposure without performance losses.     

Analysis of an Improved Split-Step Algorithm for Simulating Optical Transmission Systems

The standard Split-Step algorithm for calculating the signal transmission through optical fibres is significantly accelerated without relevant loss of accuracy by applying IIR filters as well as Fourier transformations for the linear operator. Depending on the system topology, high speed-up factors can be achieved by switching back and forth between time and frequency domain algorithms for the linear operator. Two different IIR filters are applied for calculating linear and parabolic dispersion. The efficiency of this algorithm in combination with an innovative step-size allocation method is evaluated.     

Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing

Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO₃ with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen‐ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO₃ films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen‐ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications.     

Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication

An electron beam lithography exposure strategy combining efficient proximity effect correction (PEC) with multi-pass grey scale is compared with a more conventional strategy based on a single-pass exposure without PEC. Exposure results for different types of nanowire structures are presented. Line edge and line width roughness (LER and LWR) values for both approaches are determined. The novel exposure strategy presented in this work reduced LER by ∼25% and LWR by ∼40%.     

Limited-trial Chase decoding

Chase decoders permit flexible use of reliability information in algebraic decoding algorithms for error-correcting block codes of Hamming distance d. The least complex version of the original Chase algorithms uses roughly d/2 trials of a conventional binary decoder, after which the best decoding result is selected as the final output. On certain channels, this approach achieves asymptotically the same performance as maximum-likelihood (ML) decoding. In this correspondence, the performance of Chase-like decoders with even less trials is studied. Most strikingly, it turns out that asymptotically optimal performance can be achieved by a version which uses only about d/4 trials.     

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.     

Visualizing the electric grid

In the new world of competition, power traders, grid managers, public service boards, and the public itself all need to take in what's happening at a glance. Visualization software enables viewers to interpret the data more rapidly and more accurately than ever before. This kind of software will become still more useful, even indispensable, as electricity grids are integrated over ever-larger areas, as transmission and generation become competitive markets, and as transactions grow in number and complexity. Concepts like power flow, loop flow, and reactive power, which once mattered only to the engineers directly involved in grid operations, now must be made intuitive. This is because they must be communicated to public service commissions and the consumer-voters to whom such boards are answerable. In short, whether the client/user is a power marketer, a grid operator or manager, a public authority, or a member of the public, power system visualization tools can aid their comprehension by lifting the truly significant above background noise. Such tools can expedite decision-making for congestion management, power trading, market organization, and investment planning for the long term     

Inverted Organic Solar Cells with Sol–Gel Processed High Work‐Function Vanadium Oxide Hole‐Extraction Layers

For large‐scale and high‐throughput production of organic solar cells (OSCs), liquid processing of the functional layers is desired. We demonstrate inverted bulk‐heterojunction organic solar cells (OSCs) with a sol–gel derived V₂O₅ hole‐extraction‐layer on top of the active organic layer. The V₂O₅ layers are prepared in ambient air using Vanadium(V)‐oxitriisopropoxide as precursor. Without any post‐annealing or plasma treatment, a high work function of the V₂O₅ layers is confirmed by both Kelvin probe analysis and ultraviolet photoelectron spectroscopy (UPS). Using UPS and inverse photoelectron spectroscopy (IPES), we show that the electronic structure of the solution processed V₂O₅ layers is similar to that of thermally evaporated V₂O₅ layers which have been exposed to ambient air. Optimization of the sol gel process leads to inverted OSCs with solution based V₂O₅ layers that show power conversion efficiencies similar to that of control devices with V₂O₅ layers prepared in high‐vacuum.     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.