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41.
We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector.  相似文献   
42.
The Center for NDE, Iowa State University, has developed a laboratory prototype Golay code pulse compression system and tested it on a variety of materials. The performance of the system was evaluated in terms of signal-to-noise ratio enhancement (SNRE), resolution, and computation speed. The system's error sources also were discussed. The Golay code pulse compression was simulated on a computer and demonstrated the effective noise suppression. In addition, an equivalent pulse of the Golay code (delta-like pulse) was derived theoretically using a simple ultrasonic inspection model, which demonstrated its equivalence on the output correlated signal. Overall, the pulse compression technique extended the detection range for a given peak power and considerably reduced the system'swhite noise, hence providing enhanced signal-to-noise ratios (SNRs). An average of 30 dB improvement in SNR was obtained from highly energy-absorbent materials such as rubber, plastics, corks (insulation materials), and thick composites using the Golay codes of up to 512 bits. However, the technique did not effectively reduce coherent scattering noises from the coarse grain boundaries in cast stainless steels, Inconel weld metal, and material lay-ups in thin composites. Furthermore, it was found that, depending upon the system's hardware capabilities, the overall performance could be degraded considerably.  相似文献   
43.
High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P3N5 film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 104 seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm 2/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×1014/cm2 eV has been attained  相似文献   
44.
A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications  相似文献   
45.
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.  相似文献   
46.
The on-line sensing of viable cell weight in plant cell culture process is applied to analysis and control of process. The fiber-optic fluorescence sensor was constructed to measure the NADH-dependent fluorescence inNicotiana tabacum plant cell culture and the analysis of fluorescence signal was done to be correlated with the viable cell weight. The structured kinetic model for cell growth was proposed to estimate the theoretical viable cell weight. The dimensional analysis was proposed for the interpretation of fluorescence signal, in which the path length, the inner filter effect and the hydrodynamic conditions were considered as the key factors on fluorescence signal. The dimensional analysis and empirical correlation of fluorescence signal to viable cell weight was applied to the interpretation of the detected fluorescence signal during cultivation. The proposed interpretation of fluorescence signal using dimensional analysis was well correlated with the viable cell weight estimated by the structured kinetic model as well as by empirical correlation.  相似文献   
47.
A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz  相似文献   
48.
Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.  相似文献   
49.
This study has explored the potential energy surface on the chemical reaction of CH2OH with NO by using ab initio calculation. We have found the new reaction pathway producing N-hydroxy formamide, which can further decompose to generate isocyanic acid as a reducing agent of hydrocarbons selective catalytic reduction.  相似文献   
50.
The research on optical packet switching (OPS) has witnessed considerable progress in the 1990s. We examine the future potential of OPS in the core network by discussing this switching approach and the current status of a number of its enabling technologies. Many of these technologies are still in the stage of research and experimentation. We see that optical packet switching may be deployed in the long-term future subject to satisfaction of three main conditions/developments. First, additional technological developments have to take place to overcome remaining implementation challenges while making OPS cost-effective to deploy. Second, a rational migration scenario of the network toward gradual deployment of packet-based optical switching approaches should exist. Finally, carriers have to become more interested in packet-based optical switching solutions  相似文献   
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