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91.
This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm2. Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns  相似文献   
92.
A modification to the `shape-invariant' sinusoidal speech model is proposed, whereby the phases of the component sinewaves used for the excitation are made to add coherently at each glottal closure. Applied to pitch and time-scale modification, higher quality synthetic speech is produced when large changes are required  相似文献   
93.
The authors report the design of a new current-mode A/D converter, based on a modified successive-approximations model, in 1.2 μm CMOS technology. The proposed circuit is characterised by good accuracy and fast dynamic performance, low power consumption and small occupation area. SPICE simulations allow the design approach to be validated and the electrical performance of the ADC to be predicted  相似文献   
94.
In four-color fluorescence-based automated DNA sequencing, a 4×4 filter matrix parameterizes the relationship between the dye-intensity signals of interest and the data collected by an optical imaging system. The filter matrix is important because the estimated DNA sequence is based on the dye intensities that can only be recovered via inversion of the matrix. Here, the authors present a calibration method for the estimation of the columns of this matrix, using data generated through a special experiment in which DNA samples are labeled with only one fluorescent dye at a time. Simulations and applications of the method to real data are provided, with promising results  相似文献   
95.
An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array  相似文献   
96.
Thin microtomed samples from hot-tool butt welds of polypropylene pipes are subjected to uniaxial tensile stress using a specially built instrumented microtesting machine. The deformation of the interface between the weld and the bulk polymer is measured by an optical method. An analysis of these measurements is carried out using the finite element method, and contours of the effective stress are obtained. There is a steep stress gradient at the junction of the weld flash and the bulk polymer, although the stress concentration factor is relatively low. The stress is essentially constant in the bulk polymer apart from the region near the weld zone. Tests on samples without the weld flash show that the maximum stress occurs within the weld zone. This is consistent with long-term tests on larger samples, where the fracture is found to initiate within the weld. The method of analysis enables the stress-strain response of the weld material to be determined.  相似文献   
97.
Cellulose diacetate and triacetate films 6–55 µm thick with a total porosity of 0.8–2% were prepared by pouring a solution on an immobile surface and by calendering. Sorption of H2S and CO2 gases and acetone vapors on these films was investigated in static and dynamic conditions. It was shown that films 6–10 µm thick prepared by calendering should be used for purification of air from H2S and CO2 and films 15–20 µm thick prepared by pouring should be used for removal of acetone vapors.Engels Institute of Technology, Saratov State University. Translated from Khimicheskie Volokna, No. 6, pp. 44–46, November–December, 1995.  相似文献   
98.
99.
Modeling ion implantation of HgCdTe   总被引:2,自引:0,他引:2  
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.  相似文献   
100.
For pt.I see ibid., vol.43, no.6, pp.1150-9 (1996). An exact solution of the electrostatic problem for calculating the surface charge and electric field distributions in an arbitrary periodic interdigital transducer (IDT) is given using the results of our companion paper. An arbitrary external electric field may be specified along the electrode structure with the unit cell containing one electrode, or several electrodes, of different widths. The potentials of the electrodes that may be specified are also arbitrary. It is shown that in the case without an external field, the solution includes all the known results as special cases. The case of shorted electrodes in the external electric field is investigated in detail. The surface charge and electric field distributions are calculated for a spatially harmonic external field with an arbitrary wavenumber. The results of the calculations are represented graphically for various ratios between the period of the electrode structure and the wavelength of the external field for the case of a unit cell containing one or two electrodes of different widths  相似文献   
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