Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

Effects of α‐form or β‐form nuclei on polymorphic crystalline morphology of poly(butylene adipate)

The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various T_max values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various T_max, the extents of trace α‐form crystal nuclei varied and were dependent on T_max. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at T_max. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (T_c). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by T_c. Copyright © 2005 Society of Chemical Industry     

Structural properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides

Coating of 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) relaxor ferroelectrics by a sol–gel method is followed by growth of epitaxial SrRuO₃ (SRO) metallic oxide electrodes on SrTiO₃ (STO) single-crystal substrate by pulsed laser deposition. High-quality PMN–PT films on SRO with preferred growth orientation were successfully fabricated by controlling the operation parameters. Structural properties of relaxor ferroelectric PMN–PT thin films on SRO/STO substrates have been studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). In-plane and out-of-plane alignments of the heterostructure are confirmed and the structural twinning of the materials are also revealed.     

Equilibrium and crystallographic measurements of the binary tetrahydrofuran and helium clathrate hydrates

Clathrate compounds are crystalline materials formed by a physical interaction between host and relatively light guest molecules. Various types of nano-sized cages surrounded by host frameworks exist in the highly unique crystalline structures and free guest molecules are entrapped in an open host-guest network. Recently, we reported two peculiar phenomena, swapping and tuning, naturally occurring in the hydrate cages. Helium, one of the smallest light guest molecules, must be the challengeable material in the sense of physics and moreover possesses versatile applications in the field of superconductivity technology and thermonuclear industry. In this regard, we attempted for the first time to synthesize helium hydrates at moderate temperature and pressure conditions. According to inclusion phenomena, helium itself normally cannot form clathrate hydrates due to being too small molecularly without the help of hydrate former molecules (sI, sII, and sH formers). In this study, the hydrate equilibria of the binary clathrate hydrate containing tetrahydrofuran, helium, and water were determined at 2, 3, 5.56 THF mol%. Direct volumetric measurements were also carried out to confirm the exact amount of helium captured in the hydrate cages. Finally, the crystalline structure of the formed mixed hydrates was identified by powder X-ray diffraction, resulting in structure II.     

Electrochemical determination of estradiol using a poly(l-serine) film-modified electrode

A thin film of poly(l-serine) was prepared via electropolymerization for the determination of trace levels of estradiol. In pH 5.0 phosphate buffer, l-serine was oxidized during the cyclic potential sweeps between −0.60 and 2.0 V, forming a thin film at the electrode surface. The electrochemical behavior of estradiol was investigated. The oxidation peak potential of estradiol shifts negatively at the poly(l-serine) film-coated glassy carbon electrode (GCE) compared with that at the bare GCE. Otherwise, the oxidation peak current greatly increases at the poly(l-serine) film-modified GCE. These phenomena suggest that the poly(l-serine) film exhibits catalytic activity towards the electrochemical oxidation of estradiol. Based on this, a sensitive, rapid and simple electrochemical method was proposed for the determination of estradiol. The limit of detection is evaluated to be 2.0 × 10⁻⁸ mol L⁻¹. Finally, this method was successfully used to determine estradiol in blood serum.     

Influence of polymer modulus on the percolation threshold of latex-based composites

Monodispersed copolymer emulsions with different glass transition temperatures were synthesized to investigate the effect of room temperature polymer matrix modulus on the electrical properties of carbon black (CB) filled segregated network composites. The emulsion with the highest modulus at room temperature produced composites with the lowest percolation threshold. The threshold for a composite made from a copolymer latex containing an equal ratio of butyl acrylate and methyl methacrylate (BA5) is 1.5 vol%, while the percolation threshold for the much lower modulus BA7 (7:3 BA/MMA ratio) is 4.93 vol%. The microstructure of each composite shows significant differences in the level of CB dispersion within the polymer matrix. Higher modulus polymer particles push the CB more efficiently into the interstitial space between them, resulting in a lower percolation threshold. This modulus effect was confirmed by increasing the drying temperature, where the moduli of latexes (BA5, BA5.5, and BA6) were more similar and the percolation thresholds for three composites also become closer to one another.     

Diamino telechelic polybutadienes for solventless styrene-butadiene-styrene (SBS) triblock copolymer formation

High molecular weight, high functionality diamino telechelic polybutadienes (TPBs) were synthesized by ring-opening metathesis polymerization (ROMP) of 1,5-cyclooctadiene (COD) in the presence of a chain transfer agent, 1,8-dicyano-4-octene, followed by lithium aluminum hydride reduction. Melt coupling of diamino TPB with anhydride-terminated polystyrene (PS-anh) resulted in the formation of styrene-butadiene-styrene (SBS) triblock copolymers; ca. 80% maximum conversion of PS-anh was achieved within 30 s. The results from SAXS, TEM, and rheological measurements of the coupling products confirmed the formation of SBS triblock copolymers having lamellar morphology. A fluorescent-labeled PS-anh was used to study the coupling kinetics by diluting the reactants by the addition of non-functional PS.     

New approach to enhance adhesions between carbon nanotube emitters and substrate by the combination of electrophoresis and successive electroplating

Complementary electroplating combined with electrophoresis enhanced the field emission characteristics of emitters by improving the adhesions between CNT emitters and substrate. The emitting current of the CNT emitters prepared by our combined method increased nine times higher than that of CNT emitters prepared by electrophoresis only, since electroplating improved the adhesion of CNT emitters. During the life-time measurement for 10 h, the emitting current of CNT emitters fabricated by electrophoresis only was drastically decreased to 13% of the initial current, while that prepared by the combination of electrophoresis and successive electroplating decreased to 64% of the initial current. We suggest that our method is a promising approach for the efficient fabrication of reliable CNT emitters.     

Effects of tube rupture modeling and the parameters on the analysis of multiple steam generator tube rupture event progression in APR1400

A multiple steam generator tube rupture (MSGTR) event in APR1400 has been investigated using the best estimate thermal hydraulic system code, MARS1.4. The effects of the parameters such as the number of ruptured tubes, rupture location, affected steam generator on the analysis of the MSGTR event in APR1400 are examined. In particular, tube rupture modeling methods, single tube modeling (STM) and double tube modeling (DTM), are compared. The APR1400 is found to have the capability of allowing more than 30 min to operators for the MSGTR event of five tubes. The effects of rupture location on the MSSV lift time is not significant in the case of STM, but the MSSV lift time for tube-top rupture is found to be 25.3% larger than that for rupture at the hot-leg side tube sheet in the case of DTM. The MSSV lift time for the cases that both steam generators are affected (4C5x, 4C23x) are found to be larger than that of the single steam generator cases (4A5x, 4B5x) due to a bifurcation of the primary leak flow. The discharge coefficient of Cd is found to affect the MSSV lift time only for a smaller value of 0.5. It is found that the most dominant parameter governing the MSSV lift time is the leak flow rate. Whether any modeling method is used, it gives the similar MSSV lift time if the leak flow rate is close, except in the case where both steam generators are affected. Therefore, the system performance and the MSSV lift time of the APR1400 are strongly dependent on the break flow model used in the best estimate system code.     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.