无机阻燃剂高聚合度聚磷酸铵的研制

以五氧化二磷、磷酸铵盐、尿素为原料、氨气为保护气,制备了高聚合度聚磷酸铵无机阻燃剂。考察了五氧化二磷、磷酸铵盐、尿素的用量和反应温度对聚磷酸铵平均聚合度的影响。采用端基滴定法测定了聚磷酸铵的聚合度,并用X射线衍射(XRD)法表征了聚磷酸铵的晶体结构,同时测定了聚磷酸铵的粒度和溶解度。实验结果表明,制备聚磷酸铵的最佳反应条件为:n(磷酸氢二铵)∶n(五氧化二磷)∶n(尿素)=1∶1∶0.3,反应温度280~300℃,反应时间40m in,热处理温度250~280℃,热处理时间110m in。在此条件下制备的聚磷酸铵的平均聚合度大于600,平均粒径直径小于50μm,在水中的溶解度小于0.4g;XRD表征结果表明,所合成的物质为Ⅱ型聚磷酸铵。     

鄂尔多斯盆地东部奥陶系盐下储层预测

鄂尔多斯盆地奥陶系的膏盐岩沉积面积达5×104km2,天然气的勘探程度很低。为此,利用测井技术和地震反演技术对盐下储层进行了预测。首先,通过对盐下沉积特征的综合分析,对盐下储集层段的发育层位和主要储集岩类型进行了描述;然后,采用ELAN测井技术对盐下储层的物性进行了分析,认为盐下储层的物性在普遍较差的背景上存在相对发育的层段和区带;最后,利用全局优化多道地震反演技术,对岩下储层进行了预测,认为盐下存在的局部隆起是圈闭和储层发育的有利区带。     

闪光灯泵浦Nd3+:GGG激光特性研究

用闪光灯泵浦掺钕钆镓石榴石(Nd^3 ：GGG)激光晶体，研究了脉冲宽度0．5ms、1ms、1．5ms和2ms的放电泵浦下激光输出，实验获得了1．92J的最大激光能量．     

An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks

The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm.     

高阶统计量地震子波估计建模

本文在反射系数序列为非高斯、平稳和统计独立的随机过程,地震子波为非因果、混合相位的假设条件下,分别应用滑动平均(MA)和自回归滑动平均(ARMA)模型对地震记录进行建模,并采用运算代价较小的基于高阶累积量的线性化求解方法——累积量矩阵方程法进行了子波提取和模型适应性的研究。数值模拟结果和实际地震数据处理结果表明:自回归滑动平均(ARMA)模型比滑动平均(MA)模型具有参数节省、模型更为高效的特点;累积量矩阵方程法可以有效地压制加性高斯噪声,但对累积量样本估计的准确性要求较高;如果累积量样本估计的误差和方差适度,结合自回归滑动平均(ARMA)模型描述的累积量矩阵方程法可以高效、准确地估计出地震子波。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.