Non-contact flood discharge measurements using an X-band pulse radar (I) theory

This article describes a non-contact method for measuring surface velocity and discharge in a natural channel. The X-band pulse (9.36 GHz) radar, developed by the Applied Physics Laboratory of the University of Washington, was used to scan instantaneously the lateral distribution of surface velocity across a river section, according to Bragg scattering from short waves produced by turbulent boils on the surface of the river. Based on the assumption that the vertical velocity distribution follows a universal power or logarithmic law, the discharges were estimated.     

SNCP环带链的组网与维护

在实际传输网络结构中,有些站点由于条件限制不能与其它站点连接成环.过去采用通道保护(PP)环带链组网,环链网元间业务在环上没有保护;随着技术的发展,提出了子网连接保护(SNCP)环带链组网方式,确保环链网元间业务在环上得到保护,使网络的稳定性和可靠性大大提高.     

一种确定高窄带滤光片峰值波长的方法

本文介绍一种主动式高窄带滤光片峰值波长的测量方法。该方法可以有效的测量出窄带滤光片的敏感波长，而不需要太复杂的设备。通过染料激光谐振腔的模式竞争，可以测量出滤光片的透射或反射波的波长。     

北京谱仪端盖簇射计数器工作气体的研究

为使北京谱仪端盖族射计数器更好地工作在自猝灭流光ＳＱＳ模式下，提高其能量分辨以及线性等指标，用Ａｒ，ＣＯ２，Ｌｓｏｂｕｔａｎｅ三元工作气体对探测器的工作性能进行了仔细研究，找出了一适合于主雇地数器的工作气体，此外，还研究了异丁的纯度对探测器性能的影响。     

单模光纤的传输衰减随温度变化的研究

本文从实验上测量了单模石英光纤在－50～120℃范围内的损耗。随着温度升高，光纤的损耗随之降低，在常温附近达到最小。其后损耗随着温度的继续升高而增加。损耗的变化主要是由于杂质的吸收和微弯损耗。本文对杂质的吸收以及微弯损耗进行了数值模拟，并且从理论上定性地解释了损耗对温度的依赖关系。     

V. Yeast sequencing reports. Identification of a gene encoding a new Ypt/Rab-like monomeric G-protein in Saccharomyces cerevisiae

A Saccharomyces cerevisiae sequence cloned by serendipity was found to encode a protein that is a new member of the Ypt/Rab monomeric G-protein family. This sequence shows high homology to the yeast genes SEC4 and YPT1 and, like SEC4 and YPT1, is essential for viability. The sequence was localized to chromosome V based upon hybridization to pulse-field gel-separated yeast chromosomes. The sequence has been deposited in the GenBank data library under Accession Number L17070.     

叶绿素衍生物─CPD_4在人血清中的激发和发射荧光谱

叶绿素衍生物４号（ＣＰＤ４）是一种新型中药光敏剂，本文研究了不同浓度的ＣＰＤ４分别在含１０％不同血型人血清的生理盐水中以及纯生理盐水中的激发和发射荧光光谱，并对结果进行了分析，结论对ＣＰＤ４在光动力诊断恶性肿瘤的临床应用具有一定的指导意义．     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Tests of univariate and bivariate stochastic ageing

Concepts of ageing describe how a population of units or systems improves or deteriorates with age. Many classes of life distributions are categorized and defined in the literature according to their ageing properties. An important aspect of such classifications is that the exponential distribution is nearly always a member of each class. The notion of stochastic ageing is important in any reliability analysis, and many test statistics have been developed for testing exponentiality against various ageing alternatives. This paper is an overview of these developments. The author begins with a table of ageing classes together with key references, followed by a brief discussion on the characterization of exponentiality. Test procedures are summarized, and followed by the main review. Tests of exponentiality against other alternatives are explained for randomly censored data. Finally, tests of multivariate ageing properties are listed. Some of the life classes have been derived more recently and, as far as is known, no test statistics have been proposed. On the other hand, several tests are available for some classes. Relative efficiency of a test is discussed whenever appropriate