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排序方式: 共有2382条查询结果,搜索用时 15 毫秒
1.
Microstrip stepped impedance resonator bandpass filter with an extended optimal rejection bandwidth 总被引:2,自引:0,他引:2
Bandpass filters with an optimal rejection bandwidth are designed using parallel-coupled stepped impedance resonators (SIRs). The fundamental (f/sub o/) and higher order resonant harmonics of an SIR are analyzed against the length ratio of the high-Z and low-Z segments. It is found that an optimal length ratio can be obtained for each high-Z to low-Z impedance ratio to maximize the upper rejection bandwidth. A tapped-line input/output structure is exploited to create two extra transmission zeros in the stopband. The singly loaded Q(Q/sub si/) of a tapped SIR is derived. With the aid of Q/sub si/, the two zeros can be independently tuned over a wide frequency range. When the positions of the two zeros are purposely located at the two leading higher order harmonics, the upper rejection band can be greatly extended. Chebyshev bandpass filters with spurious resonances up to 4.4f/sub o/, 6.5f/sub o/, and 8.2f/sub o/ are fabricated and measured to demonstrate the idea. 相似文献
2.
Three distinct stages of kink band formation and propagation exist in ductile matrix composites subjected to compressive loading. These stages are called incipient kinking, transient kinking and kink band broadening. Each stage involves a different deformation mode. The mechanics governing each stage are discussed. Incipient kinking, where the peak load is attained, and kink band broadening, where the load attains a steady-state, are important in structural design. Two design philosophies are presented. References to pertinent literature are made throughout. 相似文献
3.
The interfacial stress intensity factors for three types of sandwich specimens: the single edge crack tensile specimen, the three point bend specimen and the four point shear specimen were obtained by the finite element analysis and compared with the asymptotic solutions. The results show that the geometric effect for mode II specimen is larger than mode I specimen. The limit curves for geometry factor equal to 1.05 were obtained to indicate the usable range of validity of the asymptotic solution. 相似文献
4.
2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method 相似文献
5.
6.
The effect of nitrogen ion implantation on the impact wear of several metals and alloys with different hardnesses was studied. An impact testing machine was built for this study. In this machine, bullet-shaped projectiles are bounced against a metal surface which is either stationary or rotating. Wear was determined by weight loss measurements. Scanning electron microscopy pictures were taken to study the surface damage. It was found that nitrogen ion implantation improved the impact wear of most of the materials studied. With sliding motion added during the impact, nitrogen ion implantation has little effect. 相似文献
7.
Henry T. Y. Yang Martin Heinstein J.-M. Shih 《International journal for numerical methods in engineering》1989,28(6):1409-1428
The development and integration of available current methods and the development of new methods for an adaptive finite element analysis of metal forming processes are presented. The analysis includes large-strain, elastic–plastic, and thermal effects. Many numerical methods such as mesh generation, simulation of the contact between the workpiece and tool and die, and optimization of the finite element mesh are integrated and incorporated. In addition, an algorithm is developed which can detect certain severely distorted elements where the area of integration is approaching zero. The advantage of correcting these regions of locally distorted elements is demonstrated. These numerical methods are implemented in a finite element program developed for simulating metal forming processes, with the emphasis on automating the analysis. Examples include an axisymmetric stress simulation of a coldheading process, a plane strain simulation of an extrusion process and a plane strain simulation of orthogonal metal cutting, all with noticeable thermal effects. The orthogonal cutting forces and feed forces calculated are compared with two sets of experimental data, with good agreement. 相似文献
8.
To synthesize diamond films by microwave plasma enhanced chemical vapor deposition (MPECVD), the methane concentration (CH4/H2)plays a crucial role. It is well-known that there always exists a critical methane concentration (≤0.6%) only below which
a good quality diamond film can be obtained. In this study, however, the phenomena of diamond synthesis resulting from high
carbon concentration conditions were observed. The molten metals, e.g., Ag, Cu, were used as the deposition substrates on
which crystalline diamonds can be achieved from a methane content of CH4/H2≥6% or even from solid carbon sources. These results suggest that there may exist a low methane content boundary layer (<0.6%)
in the proximity of molten metal surface on which suitable species, CH, CH+, Hα and Hβ are composed for the diamond nucleation and growth similar to the condition as in the conventional low methane contents.
The molten metal inclines to dissolve other forms of carbonaceous materials other than diamond, and thus keeps a much higher
steady supply of carbon atoms that enhances the quality as well as the growth rate of the forming diamonds.
Received: 23 June 2001 / Accepted: 23 July 2001 相似文献
9.
We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects
on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation
of electron diffraction intensities suggests that the basis structure is isomorphous with Al2Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its
implications for electromigration reliability are discussed. 相似文献
10.
The microstructure and thermal behavior of the Sn-Zn-Ag solder were investigated for 8.73–9% Zn and 0–3.0% Ag. The scanning
electron microscopy (SEM) analysis shows the Ag-Zn compound when the solder contains 0.1% Ag. X-ray diffraction (XRD) analysis
results indicate that Ag5Zn8 and AgZn3 become prominent when the Ag content is 0.3% and above. Meanwhile, the Zn-rich phase is refined, and the Zn orientations
gradually diminish upon increase in Ag content. The morphology of the Ag-Zn compound varies from nodular to dendrite structure
when the Ag content increases. The growth of the Ag-Zn compounds is accompanied by the diminishing of the eutectic structure
of the Sn-9Zn solder. Differential scanning calorimetry (DSC) investigation reveals that the solidus temperature of these
solders exists at around 198°C. A single, sharp exothermic peak was found for the solders with Ag content less than 0.5%.
Liquidus temperatures were identified with the DSC analysis to vary from 206°C to 215°C when the Ag content ranges from 1.0%
to 3.0% 相似文献