Growth of Strained Si1－xGex Layer by UV/UHV/CVD

Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.     

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates.In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the Xray diffraction pole figures.Moreover,{111} φ scans with χ at 55°reveal the abnormal distribution of Bragg diffractions.The extra intensity maxima in the pole figures shows that the process of twinning plays a dominating role during the growth process.It is suggested that the polarity of {111} facets emerged on (001) surface will affect the growth twin nucleation at the initial stages of GaN growth on GaAs(001) substrates.It is proposed that twinning is prone to occurring on {111}B,Nterminated facets.     

可信计算应用的进程--可信计算平台应用、发布研讨会在京召开

今年以来,可信计算技术以及基于该技术的“安全芯片”,“安全PC”继续升温,一些厂家也纷纷宣布推出或正酝酿推出可信计算产品。9月27日“可信计算平台应用、发布研讨会”在京召开,来自国内的专家、厂商、用户等约200多名代表参加了会议。国信办领导,沈昌祥院士、屈延文教授等信息安全专家到会并发表讲话。此次大会由中国信息产业商会信息安全产业分会、中国信息协会信息安全专业委员会联合主办,由武汉瑞达信息安全产业股份有限公司(以下简称瑞达公司)承办。     

Data-mining based fault detection

This paper presents a fault-detection method based on the phase space reconstruction and data mining approaches for the complex electronic system. The approach for the phase space reconstruction of chaotic time series is a combination algorithm of multiple autocorrelation and Г-test, by which the quasi-optimal embedding dimension and time delay can be obtained. The data mining algorithm, which calculates the radius of gyration of unit-mass point around the centre of mass in the phase space, can distinguish the fault parameter from the chaotic time series output by the tested system. The experimental results depict that this fault detection method can correctly detect the fault phenomena of electronic system.     

A Water Stable,Near‐Zero‐Strain O3‐Layered Titanium‐Based Anode for Long Cycle Sodium‐Ion Battery

Layered transition metal (TM) oxides of the stoichiometry Na_xMO₂ (M = TM) have shown great promise in sodium‐ion batteries (SIBs); however, they are extremely sensitive to moisture. To date, most reported titanium‐based layered anodes exhibit a P2‐type structure. In contrast, O3‐type compounds are rarely investigated and their synthesis is challenging due to their higher percentage of unstable Ti³⁺ than the P2 type. Here, a pure phase and highly crystalline O3‐type Na_0.73Li_0.36Ti_0.73O₂ with high performance is successfully proposed in SIBs. This material delivers a reversible capacity of 108 mAh g^?1 with a stable and safe potential of 0.75 V versus Na/Na⁺. In situ X‐ray diffraction reveals that this material does not undergo any phase transitions and exhibits a near‐zero volume change upon Na⁺ insertion/de‐insertion, which ensures exceptional long cycle life over 6000 cycles. Importantly, it is found that this O3‐Na_0.73Li_0.36Ti_0.73O₂ shows superior moisture stability, even when immersed into water, which are both elusive for conventional layered TM oxides in SIBs. It is believed that the small interlayer distance and high occupation of interlayer vacancy promise such unprecedented water stability.     

太赫兹量子级联激光器有源区有限元模拟

采用有限元分析法解决了太赫兹量子级联激光器(THz QCL)有源区模拟问题。由于InP基差频THz QCL有源区为千层纳米结构,无法拆分实验探索,因此模拟分析显得尤为必要。首先列出有源区量子结构的薛定谔方程,而后采用Galerkin有限元法改写薛定谔方程,再根据连续性和边界条件,得到本征值矩阵方程,最后采用Matlab写出运算程序求解本征值矩阵方程,求出波函数。针对不同有源区量子结构,设定材料、组分、厚度和周期数及外加偏压等参数,即可得到波函数模方、能级、频率和波长等模拟结果。选取InP基差频THz QCL结构进行验证,结果表明此模型切实可行,其拓展应用也可以解决GaAs THz QCL模拟问题。     

电化学电容器充放电循环的微机测试系统

为了更好地评价电化学电容器的充放电循环寿命性能,采用恒定负载法进行充放电试验。测试系统硬件由微机和数据采集卡以及取样控制电路组成,应用软件的开发工具采用VB6.0,在Windows 2000操作系统下运行。系统除了能自动完成电容器充放电循环寿命试验外,还具有实时显示电容器充放电电流变化曲线,并将每个充放电循环周期的电流数据以文件的形式自动保存下来等功能。     

毫米波MIMO发射机中的低复杂度动态子阵列组合方法

对于采用部分连接架构的毫米波MIMO系统,为了提升频谱效率,根据信道条件动态调整各子阵列的天线组成。然而,对天线进行最佳分组需要按照一定准则对所有可能的天线组合进行穷举搜索,将导致复杂度难以接受。针对这一问题,提出了一种低复杂度的子阵列动态分配方法,核心是在对阵元进行分组时,引入一定的规则,从而显著降低组合个数,减少搜索范围。具体而言,给出了两种低复杂度的天线组合算法。首先,考虑到毫米波天线间具有较强的相关性,将相邻多个天线虚拟为一个阵元,从而降低搜索空间。其次,通过将所有天线分为上下半区,实现基于分区的天线组合,实现了搜索空间的降低。仿真结果表明,所提的方法能够在性能和复杂度之间获得较好的折中。     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48?eV. The absence of a V_Cd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb_Cd]⁺-V _Cd ^2? ]^?. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36?meV and a deep donor trap at around 0.82?eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18?eV (A-centers) and 0.31?eV (V_Cd), and a deep trap at around 1.1?eV.