注聚采出水分离用动态水力旋流器特性研究

原有的地面工艺和设备已不能满足聚合物驱采出水分离的要求。采用自行研制的动态水力旋流器，在增压与不增压两种工艺流程下，分别进行了流量和转数对分离效率的影响、转数与压力降的关系，以及入口压力与处理量的关系等项试验研究。试验结果表明，与静态水力旋流器相比，动态水力旋流器的分离效率明显提高，一般可提高10％左右；压力损失显著降低，约可减少0．1MPa，足见可在低压下工作，易于实现无泵运行；无泵运行明显比有泵增压运行的分离效率高，但处理量会有所降低。将动态水力旋流器应用于聚合物驱产出水的油－水分离处理是完全可行的。     

2,4-二氯氟苯的合成

论述了2，4－二氯氟苯合成的新方法。以对氯硝基苯为起站原料，经氟化反应、硝化反应及氯化反应制得2，4-二氯氟苯，总收率达59．0％。本合成路线工艺简单、操作安全、原料易得、成本低廉，适合于工业化生产。     

液相添加剂对PTCR陶瓷电性能的影响

液相添加剂ＡＳＴ（Ａｌ２Ｏ３＋ＳｉＯ２＋ＴｉＯ２）对ＢａＴｉＯ３陶瓷材料电性能的影响很大，随着Ａｌ２Ｏ３含量的增加，材料的电性能降低；ＳｉＯ２、ＴｉＯ２的物理特性对材料电性能影响较大；过量ＴｉＯ２对材料ＰＴＣ效应有重要影响，适当过量ＴｉＯ２含量，可得到性能优良的ＰＴＣＲ陶瓷。     

水溶性涂料使用性能研究

本文通过试验对水溶性涂料的耐盐雾腐蚀性能，耐热性能，高低温冲击性能，耐油性能，涂膜与铁基体，面漆的给合力及涂膜表面电阻进行研究，同时指出了该涂料在军用电子产品上的应用前景。     

动态波前相位的高分辨率测量

动态波前相位信息测量是大气光学，气动光学和激光技术等领域的重要实验手段。提出了一种具有高的时间和空间分辨率以及长的测量持续时间的动态波前相位测量方法。应用Ｈａｒｔｍａｎｎ－Ｓｈａｃｋ波前传感器获得高空间分辨率的相位信息，采用高帧频ＣＣＤ摄象机获得高时间分辨率图象数据。     

智能控制在回转窑配料系统中的应用

本文介绍智能控制在回转窑配料系统中的应用情况，并阐述该控制器设计、构成、软件系统特点及现场运行效果。     

相关双取样电路在降低CCD噪声中的应用

CCD器件已经广泛地应用于各个研究领域中 ,对其信号的具体处理方法是各种各样的。我们针对所研究的对象采取了一定的降低噪声的措施 ,取得了较好的结果 ,本文将对此进行阐述     

Evaluation of Qbd for electrons tunneling fromthe Si/SiO2 interface compared to electron tunneling from thepoly-Si/SiO2 interface

Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q_bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q_bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q_bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO₂ interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q_bd to be achieved     

Comparison of Displacement and Mixing Diffusers

In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.