Wide-scan spherical-lens antennas for automotive radars

A new approach to wide scan-angle antennas at millimeter-wave frequencies is introduced with special focus on ease of manufacturing and reliability. The system is composed of planar feed antennas (tapered-slot antennas), which are positioned around a homogeneous spherical Teflon lens. Beam scanning can be achieved by switching between the antenna elements. The spherical-lens system is analyzed through a combined ray-optics/diffraction method. It is found that a maximum efficiency of 50%-55% can be achieved using Teflon, Rexolite, or quartz lenses. The efficiency includes taper, spillover, and reflection loss. Calculations also indicate that the maximum lens diameter is 30-40 λ₀, which results in a maximum directivity of 39.5-42 dB. Measurements done on a single-element feed and a 5-cm Teflon lens agree very well with theory and result in a 3-dB beamwidth of 5.5° and better than -20-dB sidelobe levels at 77 GHz. Absolute gain measurements show a system efficiency of 46%-48% (including dielectric loss). A 23- and 33-element antenna array with a scan angle of ±90° and a -3.5- and -6-dB crossover, respectively, in the far-field patterns was also demonstrated. The 23-element array resulted in virtually no gain loss over the entire 90° scan angle. This represents, to our knowledge, the first wide scan-angle antenna at millimeter-wave frequencies     

Parallel feed travelling wave distributed pin photodetectors withintegrated MMI couplers

The fabrication and performance of a parallel feed travelling wave photodetector with pin diodes operating at 1550 nm is presented. A parallel optical feed using an integrated multimode interference (MMI) power splitter helps increase the maximum linear photocurrent through a more uniform distribution of photocurrent. The maximum DC linear current measured is 52.2 mA. Maximum linear RF power at 10 GHz was 9 dBm     

On the SiO2-based gate-dielectric scaling limit forlow-standby power applications in the context of a 0.13 μm CMOS logictechnology

This paper describes a leading-edge 0.13 μm low-leakage CMOS logic technology. To achieve competitive off-state leakage current (I _off) and gate delay (T_d) performance at operating voltages (V_cc) of 1.5 V and 1.2 V, devices with 0.11 μm nominal gate length (L_g-nom) and various gate-oxide thicknesses (T_ox) were fabricated and studied. The results show that low power and memory applications are limited to oxides not thinner than 21.4 Å in order to keep acceptable off-state power consumption at V_cc=1.2 V. Specifically, two different device designs are introduced here. One design named LP (T_ox=26 Å) is targeted for V_cc=1.5 V with worst case I_off <10 pA/μm and nominal gate delay 24 ps/gate. Another design, named LP1 (T_ox=22 Å) is targeted for V_cc =1.2 V with worst case I_off<20 pA/μm and nominal gate delay 27 ps/gate. This work demonstrates n/pMOSFETs with excellent 520/210 and 390/160 μA/μm nominal drive currents at V_cc for LP and LP1, respectively. Process capability for low-power applications is demonstrated using a CMOS 6T-SRAM with 2.43 μm² cell size. In addition, intrinsic gate-oxide TDDB tests of LP1 (T _ox=22 Å) demonstrate that gate oxide reliability far exceeding 10 years is achieved for both n/pMOSFETs at T=125°C and V _cc=1.5 V     

GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs

The design, fabrication and characteristics of a 1.5 to 2.8 GHz tunable ring oscillator with two quadrature outputs are described. Tuning range is 1.3 GHz or 60.5% bandwidth. The phase difference between the two outputs is proved to be 90°. The oscillator phase noise is -81.27 dBc/Hz at 100 kHz offset from the carrier at 2.736 GHz     

Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer

Stacked HfAlO-SiO₂ tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO₂ tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO₂ tunnel layer. Owing to the thermally induced traps in HfAlO-SiO₂ films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO₂/Pd NCs/1.5 nm-HfAlO/3.5 nm-SiO₂/Si structure. A N₂ plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO₂.     

基于Vivaldi阵元的超宽带相控阵天线研究

研究了适合于二维相扫的宽角宽带Vivaldi天线单元,并对其组成的天线阵列进行研究,分析其宽带情况下的阵中单元特性及扫描特性,运用小阵实验进行了验证。     

TD—SCDMA技术及市场分析

2000年5月，在土耳其伊斯坦布尔召开的国际电联大会上，TD—SCDMA被国际电联接纳为第三代移动通信系统标准之一，这标志着中国在移动通信技术领域已经进入世界先进行列。     

Performance Enhancement of Flexible Piezoelectric Nanogenerator via Doping and Rational 3D Structure Design For Self‐Powered Mechanosensational System

With the rapid development of the Internet of things (IoT), flexible piezoelectric nanogenerators (PENG) have attracted extensive attention for harvesting environmental mechanical energy to power electronics and nanosystems. Herein, porous piezoelectric fillers with samarium/titanium‐doped BiFeO₃ (BFO) are prepared by a freeze‐drying method, and then silicone rubber is filled into the microvoids of the piezoelectric ceramics, forming a unique structure based on silicone rubber matrix with uniformly distributed piezoelectric ceramic. When subjected to external force stimulation, compared with conventional piezocomposite films found on undoped BFO without a porous structure, the PENG possesses higher stress transfer ability and thus boosts output performance. The notable enhancement in the stress transfer ability and piezoelectric potential is proven by COMSOL simulations. The PENG can exhibit a maximum open‐circuit voltage (V_oc) of 16 V and short‐circuit current (I_sc) of 2.8 µA, which is 5.3 and 5.6 times higher than those of conventional piezocomposite films, respectively. The PENG can be used as a triggering signal to control the operation of fire extinguishers and household appliances. This work not only expands the application scope of lead‐free piezoelectric ceramic for energy harvesting, but also provides a novel solution for self‐powered mechanosensation and shows great potential application in IoT.