SPS烧结M42粉末冶金高速钢的显微组织与性能

采用放电等离子烧结技术(SPS)制备了M42粉末冶金高速钢,研究了SPS烧结M42粉末冶金高速钢及其热处理后的显微组织与性能。结果表明:与普通粉末冶金高速钢相比,SPS烧结制备的M42粉末冶金高速钢显微组织均匀、晶粒细小、无碳化物偏析。经过在1180℃×5min×550℃×1h的热处理后,硬度比普通粉末冶金高速钢提高1～2HRC。     

Invariant Deformation Element Model Interpretation to the Crystallography of Diffusional Body-Centered-Cube to Face-Centered-Cube Phase Transformations

The crystallography of body-centered-cube to face-centered cube (bcc-to-fcc) diffusion phase transformations in a duplex stainless steel and a Cu-Zn alloy, including long axis, orientation relationship (OR), habit plane (HP), and dislocation spacing, is successfully interpreted with one-step rotation from the Bain lattice relationship by applying a simplified invariant line (IL) analysis. It is proposed that the dislocation slipping direction in the matrix plays an important role in controlling the crystallography of precipitation.     

The influence of temperature, pressure, salinity and capillary force on the formation of methane hydrate

We present here a thermodynamic model for predicting multi-phase equilibrium of methane hydrate liquid and vapor phases under conditions of different temperature, pressure, salinity and pore sizes. The model is based on the 1959 van der Waals-Platteeuw model, angle-dependent ab initio inter- molecular potentials, the DMW-92 equation of state and Pitzer theory. Comparison with all available experimental data shows that this model can accurately predict the effects of temperature, pressure, salinity and capillary radius on the formation and dissociation of methane hydrate. Online calculations of the p-T conditions for the formation of methane hydrate at given salinities and pore sizes of sediments are available on: www.geochem-model.org/models.htm.     

Fe~(2 ),NH_4~ 对氧化亚铁硫杆菌氧化黄铁矿的影响

采用摇瓶试验方法,探讨了浸矿初期介质中Fe2 ,NH4 对T·f菌氧化黄铁矿的影响,试验表明,Fe2 ,NH4 的存在有助于提高生物活性和生物量,Fe2 的浓度在420～640mg／L之间,pH值在1．8左右,可明显减少沉淀物的产生,有利于浸矿的有效进行．     

神经网络控制系统的研究与展望

本文综述了近年来神经网络应用于控制领域的研究概况,并对其存在的问题和发展趋势作了讨论。     

Extension of the applicable range of the implicit curve-fitting method for refrigerant thermodynamic properties to critical pressure

The method of implicit curve-fitting and explicit-calculation has been used for fast and stable calculations of thermodynamic properties of subcritical refrigerants. In order to extend that method to the critical pressure, a method of sectional implicit curve-fitting and explicit-calculation for refrigerant thermodynamic properties is introduced in this paper. The whole data range is divided into several subsections. The requirements on the continuity of thermodynamic properties and the first order derivative of thermodynamic properties in the intersection points of subsections are indicated, and the methods to meet the requirements are presented. Quadric equations are constructed instead of curve-fitting when no data can be given. With the source data obtained from REFPROP 7.1, explicit fast calculation formulae for thermodynamic properties of R410A, covering the saturated temperature of 213.15–344.51 K and superheat of 0–65 K, are given as an example. The calculation speeds of the formulae of R410A are more than 7000 times faster than those of REFPROP 7.1 while the total mean relative deviation of the fast calculation formulae from REFPROP 7.1 is only 0.04%.     

有色合金电子束焊接的发展状况

随着有色合金的广泛应用,其焊接这种连接方法也愈加重要,其中的电子束焊接与传统的焊接工艺相比,具有不可替代的特点和优势。结合近年来国内外电子束焊接的研究,着重介绍了镁、铝、钛、镍基、铜合金的电子束焊接的研究现状,并展望了有色合金电子束焊接的发展趋势与研究方向。     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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NMOB与花生酸的组装多层膜及其非线性光学性质

利用与花生酸交替的方法，制备了2－硝基－5（N－甲基－N－十八烷基）氨基苯甲酸（NMOB）非中心对称多层膜，研究了它的非线性光学性质，结果表明，该多层膜的二次谐波强度与NMOB层数平方基本成正比。X－射线小角衍射测定结果再次表明，多层膜的排列相当有序，NMOB单层膜厚度为2．76nm.NMOB有良好的二阶非线性光学性质和出色的成膜性质，是一种很好的非线光学LB膜材料，可望用于制作光波导。