Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

三相分离器的油水界面和压力的计算机解耦控制

本文应用解耦理论对原油脱水用的三相分离器进行的计算机控制的设计、仿真和实时控制进行了探讨。经现场调试运行,取得了较好的控制质量。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

Presupposition failure — A comedy of errors

Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition.     

子波变换理论及其在信号处理中的应用

子波分析的形成是傅里叶分析发展史上里程碑式的进展，子波分析优于傅里叶交换的地方在于它在时域和频域同时具有良好的局部化性质，从而可以把分析的重点聚焦到任意的细节，被人们誉为数学显微镜，成为近年来在工具和方法上的重大突破。本文将子波理论中的主要定理、结论、变换特性和一些重要概念加以综述，以促进子波理论的应用。本文的重点在于介绍多分辨率分析和子波分析及其实现、子波变换及其算法、子波和滤波器组等的重要内容，并介绍其在信号处理中的应用及研究动态。     

液相颗粒包裹法制备PbNb2O6微粉的研究

本文介绍了一种采用液相颗粒包裹技术制备功能陶瓷微粉的新方法.这种方法有如下特点:(1)方法简便,不需要特殊的设备,便于扩大应用于工业生产;(2)粉体颗粒尺寸小而均匀;(3)粉体化学组成偏离小、且均匀;(4)适应性强,从双组分至十多组分的材料微粉制备均可采用;(5)特别适用于一些含有难溶组分、用液相法无法制备的材料.本工作采用这一方法,成功地制备出 PbNb_2O_6微粉,其平均腰粒尺寸<0.5μm,分散性及化学均匀性好,烧结活性高,烧结温度可以降低近100℃,瓷坯密度可达理论密度的96%以上.     

PP－g－AA的制备和表征

用熔融接枝方法制备了聚丙烯－ｇ－丙烯酸（ＰＰ－ｇ－ＡＡ）。用光电子能谱，广角Ｘ射线衍射，红外光谱和化学滴定方法对接枝物进行了定性和定量表征。讨论了单体和引发剂浓度对接枝率的影响，确定了用红外光谱法测定接枝物含量的经验公式