Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

永升城基础大体积混凝土施工的裂缝预控

基础大体积混凝土施工的裂缝控制 ,从分析产生裂缝的原因来阐述 ,将冷缝作为结构性裂缝来预控     

大功率CO2激光器脉冲电源研究

本文论述了直流高压与高频脉冲电源相叠加，构成高频、高压脉冲电源，并使其对CO2激光器进行放电实验，研究了同条件下的放电参数与功率。     

经济实用的DSP电源解决方案

笔者介绍了两种低纹波的DSP电源解决方案:一为采用MAX1793和大电流EMI静噪滤波器NFM41P;二为改进的去耦p型滤波电路和大电流EMI静噪滤波器NFM41P。并对方案的特点及其实现进行了详细的解析。试验结果表明:所述方案的纹波小,仅100 mV左右;成本低,仅几十元;适用范围广,通过改变MAX1793芯片的输出电压,可将本方案移植到TI的C5000,C6000系列,且还可用于其他的脱机工作系统。     

一种实现最佳用户检测的非线性优化神经网络

本文提出并讨论了实现码分多址（CDMA）系统上最佳多用户检测（MUD）的一种神经网络方法。该方法通过将最佳多用户检测视为非线性优化组合问题，利用神经网络能有效求解非线性优化问题的优势，导出了一种非线性优化神经网络来实现最佳多用户检测，理论分析和计算机模拟表明，所提出的神经网络具有可实时应用的动态性能和较传统方法优越得多的误码率性能和抗多址干扰的性能。     

双极关键工艺的在线统计分析

采用了双极晶体管作为双极工艺的测试结构,将在线工艺的统计分析理论应用于双极工艺,研制了双极工艺的统计分析软件。最后给出了双极工艺的某些分析结果。     

THE STATISTICAL DISTRIBUTION OF EXTREME VALUES OF WAVE-CURRENT FORCES ACTING ON SLENDER CIRCULAR CYLINDER IN IRREGULAR WAVES

Based on model test,the statistical distribution of extreme values of wave-current in-line forces acting on vertical circular cylinder is analyzed in this paper.It is shownthat the results calculated by the simplified method,proposed by authors,agree well with the testdata;Weibull distribution is also adoptable in the region of high KC number, and the shapeparameter a and scale parameter β are related well with KC number respectively.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

双滑动氧枪的应用

叙述了φO114双焊缝氧枪存在的问题及改型后单焊缝双滑动氧枪的优点及使用效果。