Algorithms of halftoning color images with edge enhancement

Printers usually generate a limited number of colors and lack the ability of producing continuous-tone color images. Traditional error-diffusion algorithms are used to solve this problem. Compared with other approaches, the approaches of using error-diffusion in general can generate halftoned images of better quality. However, smeared edges and textures may occur in these halftoned images. To produce halftoned images of higher quality, these artifacts due to unstable images, dot-overlap, and error-diffusion must be eliminated or reduced. In this paper, we show that unstable images can be eliminated or reduced through using a proper color difference formula to select the reproduction colors even vector error-diffusion is performed in the RGB domain. We also present a method of using different filters to halftone different components of a color. This approach may have clearer and sharper edges for halftoned color images. Unexpected colors may be generated due to dot-overlap in the printing process. We have presented a method to eliminate this color distortion in the process of error-diffusion. Halftoning a color image by our proposed error-diffusion algorithm with edge enhancement has the following characteristics: the unstable images do not exist; the color-error caused by dot-overlap is corrected; and the smeared edges are sharpened.     

硅制电晶体管取代硫化镉(CdS)光敏电阻器

北京信威通信技术股份有限公司在其最新的McWiLL基站设计中，选用了比克奇公司（picoChip Design Limited）的PC203作为基带处理器。McWiLL（多载波无线信息本地环路）是由中国自主研发的移动宽带接入（BWA）标准，专门针对特别广域的网络覆盖而进行了优化。McWiLL将为2008年北京奥运会部署。     

Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson’s equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias.The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses.     

Explicit model for the gate tunneling current in double-gate MOSFETs

In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal–oxide–semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger–Poisson (SP) equations has been performed to demonstrate the accuracy of the model.     

大幅降低功耗的高性能64位处理器

P．A．Semi（Santa Clara,美国加州）公司准备发布一款高性能的64位处理器,据称可以在同样性能的水平下,将功耗降低到目前产品的1／10。PA6T-1682M通过采用新的架构设计、工艺的改进和先进的时钟管理技术来实现低功耗,芯片上的门控时钟多达15000个。     

Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces

GaInP, an essential material for multijunction structures of III–V compounds for solar cells, can achieve better photovoltaic responses when grown on (111)GaAs faces, due to the large internal electric fields generated by the off-diagonal strain. In this work, we explored metalorganic chemical vapor deposition growth of GaInP layers on (001)-, (111)Ga-, and (111)As-GaAs substrates, using different phosphine flow rates. The structural and optical properties of the layers have been studied by micro-Raman spectroscopy, microphotoluminescence, and cathodoluminescence. Problems such as composition control, growth rate, and the presence of ordered phases are addressed.     

Methods for Compression of Feedback in Adaptive Multi-carrier 4G Schemes

In this paper, several algorithms for compressing the feedback of channel quality information are presented and analyzed. These algorithms are developed for a proposed adaptive modulation scheme for future multi-carrier 4G mobile systems. These strategies compress the feedback data and, used together with opportunistic scheduling, drastically reduce the feedback data rate. Thus the adaptive modulation schemes become more suitable and efficient to be implemented in future mobile systems, increasing data throughput and overall system performance.

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm² at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.     

透视全球自动化

这篇文章是我在印度帮加罗尔的时候写的。最开始,我在澳大利亚呆了一段时间,接着又在英格兰呆了两个星期,再是南非,现在是印度,看样子,在回圣地亚哥前我会在印度过新年。或许,这对于我的全球观会有所帮助,而且我也很乐于在远方与你们共同分享我的观点。     

2006半导体与EDA产业回顾与2007年的展望

本文为《中国集成电路》特约专稿:内容包括对2006年半导体和EDA产业发展的回顾/2007年半导体与EDA产业发展的展望/Cadence扮演的角色和发展的回顾与展望。