Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Evaluation of absorption and emission cross sections of Er-dopedLiNbO3 for application to integrated optic amplifiers

The polarization-dependent absorption and emission spectra of the ⁴I_13/2-⁴I_15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO₃ have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er³⁺ sites. McCumber theory is applied to determine the Er:LiNbO₃ absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO₃ channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power     

群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

太钢电弧炉上应用四星接法MOA的必要性

分析了太钢电弧炉变压器高压侧相间过电压的产生原因，比较了用于限制过电压的避雷器的两种接法．结论是用四垦接法ＭＯＡ限制过电压的效果较显著．     

室温脉冲螺旋Wiggler磁体和大电流脉冲电源的研究

本文研究了适用于自由电子激光的室温脉冲螺旋Ｗｉｇｇｌｅｒ磁体，对其设计构思、磁场特性和设计参数进行了分析和计算．作者在文中还研究并设计了螺旋Ｗｉｇｇｌｅｒ磁体的大电流宽脉冲供电电源；分析了脉冲电流的时间特性对产生自由电子激光的影响程度．     

微电子电路PC机辅助教育系统

文章介绍法中两国合作开发的微电子电路计算机辅助教育系统中的两部分，重点陈述其中的辅助测试虚拟仪器和专用实验芯片，期望对电子测试领域的教育工作者和科技工作者有所启发。     

碳热还原法制备氮化硅粉体的反应过程分析

对以碳热还原法制备氮化硅粉体的ＳｉＯ２－Ｃ－Ｎ２系统进行化学反应热力学和动力学的分析，从而发现在氮气氛不足的条件下，这一系统的反应产物将由氮化硅变为碳化硅；在氮气充足的情况下，随着温度的升高，生成物中碳化硅的量也会逐步增加，这一分析结果通过实验得到了验证。