45号钢二次枝晶臂间距与冷却速度的关系

本文利用可控平均冷却速度的单向凝固实验炉测定了４５号钢在不同平均冷却速度下的冷却曲线，由此得到其在凝固期间的平均冷却速度Ｒ，相应地测量了不同平均冷却速度下试样的二次枝晶臂间距Ｓ２，通过回归，得到了如下关系式：Ｓ２＝７２７Ｒ－０．４１，并将引式成功地应用于实际生产中。     

锻热淬火工艺对工具钢碳化物粒度的影响

研究了锻热淬火工艺对Ｔ１０钢和ＧＣｒ１５钢碳化物技度的影响。结果表明，碳化物粒度随变形量的增大而细化；终锻温度在高于碳化物析出的温度范围内变化，其碳化物粒度都同样细小；终锻温度不宜过低，否则将使碳化物变粗。     

关于我国二乙胺的生产技术及其发展

概述了乙醇氨解法等二乙胺的六类合成方法及国内外二乙胺的生产情况，指出了我国二乙胺生产技术与国外的差距，提出了扩大生产规模、开发下游产品、开发或引进加压加氢工艺等建议     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

金刚石薄膜中晶粒尺寸的研究

扫描电子显微研究表明，化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加，晶粒逐渐变大，且每一层内，存在少量的大金刚石颗粒，讨论了晶粒尺寸变化和大晶粒形成的原因和机制。     

1477 nm LD泵浦掺铒光纤放大器的研究

报道了采用１４７７ｎｍ激光二极管（ＬＤ）泵浦的掺铒光纤放大器的实验结果。研究了放大器的增益和时域特性。对１５２０ｎｍ的信号光，获得了２３ｄＢ的增益，泵浦效率为２．２８ｄＢ／ｍＷ。低频脉冲信号经过放大器后未发生波形畸变。     

精轧油膜轴承密封失效机理的初步分析

对油膜轴承密封出现的进水、漏油现象作了大量的调查、测量和统计分析，找出了产生质量事故的根本原因，提出了解决措施。     

松香及其衍生物在浮选分离中的应用

介绍了松香的来源、化学组成及理化性质；讨论了松香及其衍生物在非硫化物矿浮选分离、有色金属离子的浮选分离以及从水溶液中浮选分离有机物等方面的应用情况。     

定量电子晶体学硼对Ni3Al的电荷密度分布的影响

阐述了定量电子晶体学测定晶体电荷密度分布的基本原理和方法，不足之处和改善途径。以硼对Ｎｉ３Ａｌ的电荷密度分布的影响为实例，介绍了定量电子晶体学在研究晶体电子结构方面的应用前景。     

On the current delivery limit of semiconducting carbon nanotubes

The current carrying capacity of single-walled semiconducting carbon nanotubes (CNTs) is studied by self-consistent quantum simulations using the non-equilibrium Green’s function formalism with the self-consistent Born approximation. The simulation shows that the current carrying capacity depends on the bias regime and is drastically different from that of metallic tubes. For long CNTs (with a length much longer than zone boundary and optical phonon scattering mean free path), the current saturates around 20 μA in the forward bias regime with unipolar transport due to phonon scattering. In ambipolar transport regime, the current delivery limit is still about 20 μA due to recombination of electron and hole currents. In contrast, for short semiconducting CNTs, the current delivery capacity can be above 25 μA in the unipolar transport regime and further double in the ambipolar transport regime. In reverse bias regime, the current of a long CNT can exceed 20 μA due to the second subband conduction and increased electron injection from the drain. The simulation provides a coherent explanation to the dependence of current delivery limit on bias regime and channel length, which is consistent with recent experiments.