Generalized Hermitian Radial Basis Functions Implicits from polygonal mesh constraints

In this work we investigate a generalized interpolation approach using radial basis functions to reconstruct implicit surfaces from polygonal meshes. With this method, the user can define with great flexibility three sets of constraint interpolants: points, normals, and tangents; allowing to balance computational complexity, precision, and feature modeling. Furthermore, this flexibility makes possible to avoid untrustworthy information, such as normals estimated on triangles with bad aspect ratio. We present results of the method for applications related to the problem of modeling 2D curves from polygons and 3D surfaces from polygonal meshes. We also apply the method to problems involving subdivision surfaces and front-tracking of moving boundaries. Finally, as our technique generalizes the recently proposed HRBF Implicits technique, comparisons with this approach are also conducted.     

Exact corotational shell for finite strains and fracture

The corotational method for frame-invariant elements is generalized to obtain a consistent large-strain shell element incorporating thickness extensibility. The resulting element allows arbitrary in-plane deformations and is distinct from the traditional corotational methods (either quadrature-based or element-based) in the sense that the corotational frame is exact. The polar decomposition operation is performed in two parts, greatly simplifying the linearization calculations. Expressions for the strain-degrees-of-freedom matrices are given for the first time. The symbolic calculations are performed with a well-known algebraic system with a code generation package. Classical linear benchmarks are shown with excellent results. Applications with hyperelasticity and finite strain plasticity are presented, with asymptotically quadratic convergence and very good benchmark results. An example of finite strain plasticity with fracture is solved successfully, showing remarkable robustness without the need of enrichment techniques.     

永磁直线同步电机推力波动约束

由齿槽力、边端力及法向吸力引起的推力波动是影响永磁直线同步电机(PMLSM)动态性能的主要因素。为了实现高速精密直接驱动系统,通过对PMLSM进行有限元分析建模,分析了齿槽力变化规律,利用傅里叶级数拟合得到齿槽力变化曲线;设计了齿槽力电流预测控制模型,对齿槽力引起的推力波动进行补偿;同时设计了扰动观测器对其他因素引起的推力波动进行补偿,进一步削弱了推力波动。最后,通过实验验证PMLSM推力波动补偿控制系统的有效性,补偿后电流和速度的波动都得到了很大改善,能够实现较高精度的直接驱动系统。     

Low voltage low power fully differential self‐biased 1.5‐bit quantizer with built‐in thresholds

A new fully differential self‐biased 1.5‐bit flash quantizer with built‐in threshold voltages, suitable for high speed ADCs and low voltage operation, is described. The proposed circuit is very simple, and simulation results in a 65 nm standard CMOS technology demonstrate that, following the suggested design methodology, it is able to achieve low offset, low kickback noise, low metastability probability errors and fast regeneration time with very low power dissipation. Copyright © 2011 John Wiley & Sons, Ltd.     

Cost‐Efficient Virtual Optical Network Embedding for Manageable Inter‐Data‐Center Connectivity

Network virtualization opens the door to novel infrastructure services offering connectivity and node manageability. In this letter, we focus on the cost‐efficient embedding of on‐demand virtual optical network requests for interconnecting geographically distributed data centers. We present a mixed integer linear programming formulation that introduces flexibility in the virtual‐physical node mapping to optimize the usage of the underlying physical resources. Illustrative results show that flexibility in the node mapping can reduce the number of add‐drop ports required to serve the offered demands by 40%.     

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120 °C and 1 kgf/cm² for 2 min, followed by a 10 min post-baking at 100 °C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-κ titanium oxynitride (TiO _x N _y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon (～0.01 cm²/V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.     

Disaster-survivable cloud-network mapping

Cloud-computing services are provided to consumers through a network of servers and network equipment. Cloud-network (CN) providers virtualize resources [e.g., virtual machine (VM) and virtual network (VN)] for efficient and secure resource allocation. Disasters are one of the worst threats for CNs as they can cause massive disruptions and CN disconnection. A disaster may also induce post-disaster correlated, cascading failures which can disconnect more CNs. Survivable virtual-network embedding (SVNE) approaches have been studied to protect VNs against single physical-link/-node and dual physical-link failures in communication infrastructure, but massive disruptions due to a disaster and their consequences can make SVNE approaches insufficient to guarantee cloud-computing survivability. In this work, we study the problem of survivable CN mapping from disaster. We consider risk assessment, VM backup location, and post-disaster survivability to reduce the risk of failure and probability of CN disconnection and the penalty paid by operators due to loss of capacity. We formulate the proposed approach as an integer linear program and study two scenarios: a natural disaster, e.g., earthquake and a human-made disaster, e.g., weapons-of-mass-destruction attack. Our illustrative examples show that our approach reduces the risk of CN disconnection and penalty up to 90 % compared with a baseline CN mapping approach and increases the CN survivability up to 100 % in both scenarios.     

High‐Precision Temperature‐Controllable Metal‐Coated Polymeric Molds for Programmable,Hierarchical Patterning

Nanofabrication is an indispensable process in nanoscience and nanotechnology. Unconventional lithographic techniques are often used for fabrication as alternatives to photolithography because they are faster, more cost‐effective, and simpler to use. However, these techniques are limited in scalability and utility because of the collapse of preprinted structures during step‐and‐repeat processes. This study proposes a new class of temperature‐controllable polymeric molds that are coated with a metal such that any site‐specific patterning can be accomplished in a programmable manner using selective contact‐dewetting lithography. The lithography allows sub‐100 nm patterning, step‐and‐repeat processing, and hierarchical structure fabrication. The programmable feature of the lithography can be utilized for the structural coloring and shaping of objects. Large‐area programmable patterning, semiconductor device manufacturing, and the fabrication of iridescent security devices would benefit from the unique features of the proposed strategy.