The effects of substrate bias,substrate temperature,and pulse frequency on the microstructures of chromium nitride coatings deposited by pulsed direct current reactive magnetron sputtering

Recently, great attention has been devoted to the pulsed direct current (DC) reactive magnetron sputtering technique, due to its ability to reduce arcing and target poisoning, and its capability of producing insulating thin films. In this study, chromium nitride (CrN) coatings were deposited by the bipolar symmetric pulsed DC magnetron reactive sputtering process at different pulse frequency, substrate bias voltage, and the substrate temperature. It was observed that the texture of CrN changed from (111) to (200) as substrate temperature increased to 300°C as deposited at 2 kHz without substrate bias. With increasing pulsing bias and pulse frequency of target, predominated (200) orientation of CrN film was shown due to the ion bombardment/channeling effect to preferentially sputter those unaligned planes. For the CrN coatings deposited with pulsed biasing, the grain size decreased with increasing pulse frequency and substrate bias, whereas the surface roughness showed a reverse trend. The deposition rate of the CrN films decreased with increasing pulse frequency. It was concluded that the pulse frequency, substrate bias, and substrate temperature played important role in the texture, microstructure, and surface roughness of the CrN coatings deposited by the pulsed DC magnetron sputtering process.     

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2–2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4–1.78 GPa and in the range 11.6–23.2 MPa of compressive stress.     

Detection of repolarization alternans with an implantable cardioverter defibrillator lead in a porcine model

Mechanistic links have been suggested between repolarization alternans (RPA) and the onset of ventricular tachycardia (VT) and/or fibrillation. Endocardial detection of RPA may, therefore, be an important step in future device-based treatments of arrhythmias. Here, we investigate if RPA could be detected during acute ischemia using an implantable cardioverter defibrillator (ICD) lead (tip to distal coil) located in the right ventricular apex. In 18 pigs, the right coronary (n = 10) or left anterior descending coronary (n = 8) artery was occluded for 10 min using a balloon catheter, followed by reperfusion for 30 min, and re-occlusion for 30 min. RPA magnitude, computed using the modified moving average (MMA) method, showed a sharp increase in all 18 animals, from a mean baseline level of 1.9 +/- 1.3 mV to 3.0 +/- 1.3 mV during first occlusion (p < 0.001). RPA magnitude showed a prominent increase in 10 animals during re-occlusion, from a mean baseline level of 1.7 +/- 1.0 mV to 3.3 +/- 1.5 mV (p < 0.001). The protocol was terminated during the first two stages of occlusion and reperfusion for the remaining 8 animals due to the occurrence of ventricular fibrillation (VF). These results confirm that RPA increases under ischemic conditions and that it is possible to detect and track RPA dynamics with an ICD lead that is positioned in a clinically realistic location. Such an approach may be useful in formulating improved arrhythmia detection and control algorithms.     

Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

The process window for the infinite etch selectivity of silicon nitride (Si₃N₄) layers to ArF photoresist (PR) and ArF PR deformation were investigated in a CH₂F₂/H₂/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the low frequency power (P_LF), CH₂F₂ flow rate, and H₂ flow rate. It was found that infinitely high etch selectivities of the Si₃N₄ layers to the the ArF PR on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The H₂ and CH₂F₂ flow rates were found to play a critical role in determining the process window for infinite Si₃N₄/ArF PR etch selectivity, due to the change in the degree of polymerization. The preferential chemical reaction of hydrogen with the carbon in the hydrofluorocarbon (CH_xF_y) layer and the nitrogen on the Si₃N₄ surface, leading to the formation of HCN etch by-products, results in a thinner steady-state hydrofluorocarbon layer and, in turn, in continuous Si₃N₄ etching, due to enhanced SiF₄ formation, while the hydrofluorocarbon layer is deposited on the ArF photoresist surface.     

Fast Bit Gather, Bit Scatter and Bit Permutation Instructions for Commodity Microprocessors

Advanced bit manipulation operations are not efficiently supported by commodity word-oriented microprocessors. Programming tricks are typically devised to shorten the long sequence of instructions needed to emulate these complicated bit operations. As these bit manipulation operations are relevant to applications that are becoming increasingly important, we propose direct support for them in microprocessors. In particular, we propose fast bit gather (or parallel extract), bit scatter (or parallel deposit) and bit permutation instructions (including group, butterfly and inverse butterfly). We show that all these instructions can be implemented efficiently using both the fast butterfly and inverse butterfly network datapaths. Specifically, we show that parallel deposit can be mapped onto a butterfly circuit and parallel extract can be mapped onto an inverse butterfly circuit. We define static, dynamic and loop invariant versions of the instructions, with static versions utilizing a much simpler functional unit. We show how a hardware decoder can be implemented for the dynamic and loop-invariant versions to generate, dynamically, the control signals for the butterfly and inverse butterfly datapaths. The simplest functional unit we propose is smaller and faster than an ALU. We also show that these instructions yield significant speedups over a basic RISC architecture for a variety of different application kernels taken from applications domains including bioinformatics, steganography, coding, compression and random number generation.     

Analysis and Implementation of a 0.9-V Voltage-Controlled Oscillator With Low Phase Noise and Low Power Dissipation

A voltage-controlled oscillator (VCO) with low phase noise and low power dissipation for IEEE 802.11b is proposed. A negative resistance multiple-gated circuit with a bypass capacitor is adopted to improve phase noise. The chip is implemented in 0.18-$mu{hbox {m}}$ CMOS process under a supply voltage of 0.9 V and power consumption of 2.7 mW. Its measured results show that the VCO has a phase noise of $-$122.3 dBc/Hz at 1-MHz offset frequency from the carrier frequency, and the tuning frequency from 2.17 to 2.73 GHz can be obtained under the tuning voltage of $-$0.9 to 0.9 V. The theoretical analysis and design consideration are also conducted in detail to show the benefits of the proposed VCO.      

Transition Mechanism of InAs Quantum Dot to Quantum Ring Revealed by Photoluminescence Spectra

The transition mechanism of InAs quantum dot (QD) to quantum ring (QR) was investigated. After the growth of InAs QDs, a thin layer of GaAs was overgrown on the InAs QD and the sample was annealed at the same temperature for a period of time. It was found that the central part of the InAs islands started to out diffuse and formed ring shape only after a deposition of a critical thickness (1 ~ 2 nm) of GaAs capped layer depending on the size of InAs QDs. This phenomenon was revealed by photoluminescence measurement and atomic force microscopy image. It is suggested that the strain energy provided by the GaAs overgrown layer is responsible for the InAs to diffuse out of the island to form QR.     

An on-demand TV service architecture for networked home appliances

The recent advent of networked home appliances has enabled enhanced on-demand multimedia services to be feasible. Especially, personal video recorders have made it more convenient to manage broadcast TV programs at home by storing them on their own disks. However, standalone PVRs have limitations on availability of TV programs due to limited reception channel and storage capacity. Networked PVR services can get over these limitations by storing all broadcast TV programs in remote storage systems that servers provide. Thus, these networked PVR services can have several advantages over standalone PVRs in terms of cost and availability. In this article we therefore propose an on-demand TV service architecture for networked PVRs to reduce response times to interactive operations and save network bandwidth. Finally, we show from simulation results that our proposed architecture both decreases the number of programs whose initial time-shifting operations are delayed and increases the hit ratio in cache servers significantly.     

Minimum achievable phase noise of RC oscillators

To make RC oscillators suitable for RF applications, their typically poor phase-noise characteristics must be improved. We show that, for a given power consumption, this improvement is fundamentally limited by the fluctuation-dissipation theorem of thermodynamics. We also present the analytical formulation of this limit for relaxation (including ring) oscillators using a time-domain phase-noise analysis method which is introduced in this paper. Measurement shows the maximum possible improvement is generally less than 6dB for ring oscillators, while it can be as high as 21dB for other relaxation oscillators. The suboptimal performance of relaxation oscillators is attributed to the continuous current flow in these oscillator topologies. These results provide useful insight for feasibility studies of oscillator design.     

Suppression of transient phenomena in hybrid Raman/EDF amplifier

Transient phenomena of hybrid Raman/erbium-doped fiber amplifier (EDFA) upon optical channel add-drop are investigated. The transient responses of surviving channels are resulted from the combined dynamics of Raman amplifier and EDFA. It is shown that the suggested method employing fast gain control of EDFA only can effectively suppress the transient variation of output power. The transient-suppressing hybrid Raman/EDFA is proven to be enough for wavelength-division-multiplexing networks including reconfigurable optical add-drop multiplexer and/or transparent optical cross-connect, if the optical switching speed is carefully chosen.